C. Faulkner

493 total citations
8 papers, 415 citations indexed

About

C. Faulkner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, C. Faulkner has authored 8 papers receiving a total of 415 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Biomedical Engineering. Recurrent topics in C. Faulkner's work include Semiconductor materials and devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). C. Faulkner is often cited by papers focused on Semiconductor materials and devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). C. Faulkner collaborates with scholars based in United States and Ireland. C. Faulkner's co-authors include Daniel Connelly, D. E. Grupp, P.A. Clifton, James S. Harris, Justin D. Holmes, Conor O’Mahony, Dipu Borah, Sozaraj Rasappa, Richard A. Farrell and Michael A. Morris and has published in prestigious journals such as Applied Physics Letters, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

C. Faulkner

7 papers receiving 377 citations

Peers

C. Faulkner
Christian Seidel Germany
M. Koike Japan
Xuefeng Peng China
Ruilong Xie Singapore
Sergey V. Filippov Russia
Vikram Singh India
James C. Sturm United States
A I Baranov Russia
A. Wolff Germany
S. Day United Kingdom
Christian Seidel Germany
C. Faulkner
Citations per year, relative to C. Faulkner C. Faulkner (= 1×) peers Christian Seidel

Countries citing papers authored by C. Faulkner

Since Specialization
Citations

This map shows the geographic impact of C. Faulkner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Faulkner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Faulkner more than expected).

Fields of papers citing papers by C. Faulkner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Faulkner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Faulkner. The network helps show where C. Faulkner may publish in the future.

Co-authorship network of co-authors of C. Faulkner

This figure shows the co-authorship network connecting the top 25 collaborators of C. Faulkner. A scholar is included among the top collaborators of C. Faulkner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Faulkner. C. Faulkner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

8 of 8 papers shown
1.
Borah, Dipu, Sozaraj Rasappa, Richard A. Farrell, et al.. (2011). Plasma etch technologies for the development of ultra-small feature size transistor devices. Journal of Physics D Applied Physics. 44(17). 174012–174012. 79 indexed citations
2.
3.
Connelly, Daniel, C. Faulkner, P.A. Clifton, & D. E. Grupp. (2006). Fermi-level depinning for low-barrier Schottky source/drain transistors. Applied Physics Letters. 88(1). 132 indexed citations
4.
Connelly, Daniel, P.A. Clifton, C. Faulkner, & D. E. Grupp. (2006). Ultra-thin-body fully depleted SOI metal source/drain n-MOSFETs and ITRS low-standby-power targets through 2018. 972–975. 11 indexed citations
5.
Connelly, Daniel, C. Faulkner, P.A. Clifton, & D. E. Grupp. (2005). Improved short-channel FET performance with virtual extensions. IEEE Transactions on Electron Devices. 53(1). 146–152. 1 indexed citations
6.
Connelly, Daniel, C. Faulkner, D. E. Grupp, & James S. Harris. (2004). A New Route to Zero-Barrier Metal Source/Drain MOSFETs. IEEE Transactions on Nanotechnology. 3(1). 98–104. 109 indexed citations
7.
Connelly, Daniel, C. Faulkner, & D. E. Grupp. (2003). Optimizing Schottky S/D offset for 25-nm dual-gate CMOS performance. IEEE Electron Device Letters. 24(6). 411–413. 39 indexed citations
8.
Connelly, Daniel, C. Faulkner, & D. E. Grupp. (2003). Performance advantage of schottky source/drain in ultrathin-body silicon-on-insulator and dual-gate cmos. IEEE Transactions on Electron Devices. 50(5). 1340–1345. 44 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Rankless by CCL
2026