P. A. Houston

570 citations

25 papers · 448 indexed · h-index 10

Co-authors: A G R Evans G. Hill W. S. Tan P. J. Parbrook David Wood C. R. Whitehouse R. Airey D. J. Wallis
Topics: Semiconductor materials and devices (14 papers)GaN-based semiconductor devices and materials (13 papers)Semiconductor Quantum Structures and Devices (8 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics Optics Letters
Partner nations: United Kingdom United States Russia

In The Last Decade

P. A. Houston

25 papers receiving 429 citations

Peers

Countries citing papers authored by P. A. Houston

Since Specialization

Citations

This map shows the geographic impact of P. A. Houston's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. A. Houston with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. A. Houston more than expected).

Fields of papers citing papers by P. A. Houston

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. A. Houston. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. A. Houston. The network helps show where P. A. Houston may publish in the future.

Co-authorship network of co-authors of P. A. Houston

This figure shows the co-authorship network connecting the top 25 collaborators of P. A. Houston. A scholar is included among the top collaborators of P. A. Houston based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. A. Houston. P. A. Houston is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors 2019 ·Journal of Applied Physics ·(unknown),(unknown),(unknown),(unknown),Lee Kb,P. A. Houston,Paul R. Chalker,S. Tripathy,Richard J. Potter	11
2	Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers 2018 ·Journal of Applied Physics ·(unknown),James T. Griffiths,(unknown),Lee Kb,(unknown),P. A. Houston,Ivor Guiney,C. J. Humphreys,Rachel A. Oliver,D. J. Wallis	29
3	Elimination of Leakage in GaN-on-Diamond 2016 ·Brian Alvarez,Daniel Francis,Firooz Faili,(unknown),Daniel J. Twitchen,(unknown),P. A. Houston	4
4	Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs 2016 ·Explore Bristol Research ·Indranil Chatterjee,Michael J. Uren,Alexander Pooth,Serge Karboyan,(unknown),Martin Kuball,(unknown),(unknown),P. A. Houston,D. J. Wallis,Ivor Guiney,C. J. Humphreys	6
5	Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant 2015 ·Semiconductor Science and Technology ·(unknown),Lee Kb,Ivor Guiney,(unknown),Sheng Jiang,D. J. Wallis,C. J. Humphreys,P. A. Houston	17
6	Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors 2014 ·Journal of Applied Physics ·(unknown),(unknown),Ivor Guiney,(unknown),Sheng Jiang,D. J. Wallis,C. J. Humphreys,P. A. Houston	6
7	Bi-layer Si_xN_ypassivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown 2010 ·Semiconductor Science and Technology ·(unknown),(unknown),P. A. Houston,W. S. Tan,Michael J. Uren,D. J. Wallis,Trevor Martin	2
8	A 3D-WLCSP package technology: Processing and reliability characterization 2008 ·P. A. Houston,(unknown),D.F. Baldwin,(unknown),(unknown)	5
9	740 nm InP/GaInP quantum-dot laser with 190 A cm ⁻² room temperature threshold current density 2005 ·Electronics Letters ·J. Lutti,Peter M. Smowton,G.M. Lewis,A. B. Krysa,J.S. Roberts,P. A. Houston,Y.-C. Xin,(unknown),L. F. Lester	11
10	InP-GaInP quantum-dot lasers emitting between 690-750 nm 2005 ·IEEE Journal of Selected Topics in Quantum Electronics ·Peter M. Smowton,J. Lutti,G.M. Lewis,A. B. Krysa,J.S. Roberts,P. A. Houston	25
11	Gain saturation in InP∕GaInP quantum-dot lasers 2004 ·Applied Physics Letters ·J. Lutti,Peter M. Smowton,G.M. Lewis,P. Blood,A. B. Krysa,Jie Lin,P. A. Houston,A. J. Ramsay,D. J. Mowbray	7
12	Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates 2003 ·Journal of Electronic Materials ·W. S. Tan,P. A. Houston,G. Hill,R. Airey,(unknown)	8
13	Conductance anomalies in gated V-groove quantum wires 2002 ·Nanotechnology ·(unknown),С. В. Морозов,Dmitry Yu. Ivanov,I. A. Larkin,P. A. Houston,G. Hill,(unknown),Yu. V. Dubrovskiĭ,J. H. Jefferson	4
14	Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors 2002 ·Applied Physics Letters ·W. S. Tan,P. A. Houston,P. J. Parbrook,David Wood,G. Hill,C. R. Whitehouse	94
15	Second-harmonic generation from a first-order quasi-phase-matched GaAs/AlGaAs waveguide crystal 2001 ·Optics Letters ·Edik U. Rafailov,Pablo Loza‐Álvarez,C. T. A. Brown,W. Sibbett,R.M. De La Rue,P. Millar,(unknown),J.S. Roberts,P. A. Houston	20
16	Enhanced mobility piezoelectric AlInAs/InGaAsquantum well structures on (111)B InP substrates 1995 ·Electronics Letters ·(unknown),P. A. Houston,M. Hopkinson,G.J. Rees	1
17	Quasiballistic electron transport in InP/InGaAs heterojunction bipolar transistors 1992 ·Electronics Letters ·(unknown),P. A. Houston,M. Hopkinson	3
18	Transport and related properties of InP based HBTs 1990 ·P. A. Houston,(unknown),Rajesh Kumar,G. Hill,M. Hopkinson,P.A. Claxton	1
19	Electron drift velocity in n-GaAs at high electric fields 1977 ·Solid-State Electronics ·P. A. Houston,A G R Evans	94
20	Temperature dependence of the high-field velocity of electrons in n GaAs 1975 ·Electronics Letters ·P. A. Houston,A G R Evans	1

About P. A. Houston

P. A. Houston is a scholar working on Condensed Matter Physics, Surfaces, Coatings and Films and Electrical and Electronic Engineering, having authored 25 papers that have together received 448 indexed citations. Recurring topics across this work include Semiconductor materials and devices (14 papers), GaN-based semiconductor devices and materials (13 papers) and Semiconductor Quantum Structures and Devices (8 papers). The work is most often cited by research in Condensed Matter Physics (256 citations), Electronic, Optical and Magnetic Materials (120 citations) and Electrical and Electronic Engineering (370 citations). P. A. Houston has collaborated with scholars based in United Kingdom, United States and Russia. Frequent co-authors include A G R Evans, G. Hill, W. S. Tan, P. J. Parbrook, David Wood, C. R. Whitehouse, R. Airey, D. J. Wallis, Ivor Guiney and C. J. Humphreys. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Optics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact