W. S. Tan

626 total citations
21 papers, 522 citations indexed

About

W. S. Tan is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, W. S. Tan has authored 21 papers receiving a total of 522 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Condensed Matter Physics, 16 papers in Electrical and Electronic Engineering and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in W. S. Tan's work include GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and devices (11 papers) and Semiconductor Quantum Structures and Devices (6 papers). W. S. Tan is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and devices (11 papers) and Semiconductor Quantum Structures and Devices (6 papers). W. S. Tan collaborates with scholars based in United Kingdom and Australia. W. S. Tan's co-authors include P.A. Houston, Michael J. Uren, R.S. Balmer, G. Hill, P. J. Parbrook, P. A. Houston, R. Airey, T. Martin, Trevor Martin and P. W. Fry and has published in prestigious journals such as Applied Physics Letters, Journal of Physics D Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

W. S. Tan

21 papers receiving 506 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. S. Tan United Kingdom	10	474	388	192	149	109	21	522
P. Javorka Germany	14	501 1.1×	443 1.1×	199 1.0×	125 0.8×	122 1.1×	46	580
Tomohiro Nozawa Japan	5	331 0.7×	334 0.9×	214 1.1×	122 0.8×	156 1.4×	5	457
A. Kuliev United States	11	540 1.1×	470 1.2×	214 1.1×	195 1.3×	95 0.9×	20	604
K. Čičo Slovakia	15	529 1.1×	465 1.2×	306 1.6×	116 0.8×	142 1.3×	25	611
J. D. Guo China	8	424 0.9×	297 0.8×	180 0.9×	172 1.2×	109 1.0×	14	479
Hee‐Sung Kang South Korea	13	430 0.9×	480 1.2×	245 1.3×	132 0.9×	108 1.0×	37	585
N. Sarazin France	8	336 0.7×	250 0.6×	121 0.6×	91 0.6×	63 0.6×	18	368
Kumud Ranjan Singapore	15	525 1.1×	435 1.1×	226 1.2×	111 0.7×	106 1.0×	42	578
Christian Wurm United States	12	420 0.9×	283 0.7×	193 1.0×	134 0.9×	108 1.0×	27	459
M. Tordjman France	14	502 1.1×	362 0.9×	223 1.2×	141 0.9×	105 1.0×	29	545

Countries citing papers authored by W. S. Tan

Since Specialization

Citations

This map shows the geographic impact of W. S. Tan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. S. Tan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. S. Tan more than expected).

Fields of papers citing papers by W. S. Tan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. S. Tan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. S. Tan. The network helps show where W. S. Tan may publish in the future.

Co-authorship network of co-authors of W. S. Tan

This figure shows the co-authorship network connecting the top 25 collaborators of W. S. Tan. A scholar is included among the top collaborators of W. S. Tan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. S. Tan. W. S. Tan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zhang, Liyang, et al.. (2015). High Brightness GaN-on-Si Based Blue LEDs Grown on 150 mm Si Substrates Using Thin Buffer Layer Technology. IEEE Journal of the Electron Devices Society. 3(6). 457–462. 20 indexed citations

Murad, S., Atsushi Nishikawa, Andrea Pinos, et al.. (2014). GaN‐on‐Si wafers for HEMTs with high power‐driving capability. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 945–948. 5 indexed citations

Pinos, Andrea, W. S. Tan, A. Chitnis, et al.. (2014). Excellent uniformity on large diameter GaN on silicon LED wafer. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 624–627. 5 indexed citations

Pinos, Andrea, W. S. Tan, A. Chitnis, et al.. (2013). Highly Uniform Electroluminescence from 150 and 200 mm GaN-on-Si-Based Blue Light-Emitting Diode Wafers. Applied Physics Express. 6(9). 95502–95502. 6 indexed citations

Sellers, Ian R., W. S. Tan, Kathleen N. Smith, et al.. (2011). Wide depletion width of 1 eV GaInNAs solar cells by thermal annealing. Applied Physics Letters. 99(15). 16 indexed citations

Houston, P. A., et al.. (2010). Bi-layer Si_xN_ypassivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown. Semiconductor Science and Technology. 25(12). 125010–125010. 2 indexed citations

Tan, W. S., M. Kauer, S. E. Hooper, et al.. (2009). Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy. physica status solidi (a). 206(6). 1205–1210. 1 indexed citations

Tan, W. S., et al.. (2009). InGaN-Based Blue-Violet Laser Diodes Using AlN as the Electrical Insulator. Japanese Journal of Applied Physics. 48(7R). 72102–72102. 7 indexed citations

Tan, W. S., et al.. (2009). Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation. Applied Physics Express. 2(11). 112101–112101. 8 indexed citations

10.

Rossetti, Marco, T. M. Smeeton, W. S. Tan, et al.. (2008). Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings. Applied Physics Letters. 92(15). 22 indexed citations

11.

Tan, W. S., M. Kauer, S. E. Hooper, et al.. (2008). High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy. Electronics Letters. 44(5). 351–353. 5 indexed citations

12.

Tan, W. S., et al.. (2007). Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination. Journal of Electronic Materials. 36(4). 397–402. 12 indexed citations

13.

Kauer, M., V. Bousquet, S. E. Hooper, et al.. (2006). Nitrides optoelectronic devices grown by molecular beam epitaxy. physica status solidi (a). 204(1). 221–226. 11 indexed citations

14.

Tan, W. S., Michael J. Uren, P. W. Fry, et al.. (2006). High temperature performance of AlGaN/GaN HEMTs on Si substrates. Solid-State Electronics. 50(3). 511–513. 102 indexed citations

15.

Tan, W. S., et al.. (2005). Minority carrier lifetime measurement in GaN by a differential phase technique. UWA Profiles and Research Repository (University of Western Australia). 67. 117–120. 1 indexed citations

16.

Tan, W. S., et al.. (2005). Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs. IEEE Electron Device Letters. 27(1). 1–3. 109 indexed citations

17.

Tan, W. S., et al.. (2004). Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors. Journal of Electronic Materials. 33(5). 400–407. 23 indexed citations

18.

Tan, W. S., et al.. (2003). Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates. Journal of Electronic Materials. 32(5). 350–354. 8 indexed citations

19.

Tan, W. S., P. A. Houston, P. J. Parbrook, et al.. (2002). Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors. Applied Physics Letters. 80(17). 3207–3209. 94 indexed citations

20.

Parbrook, P. J., David Wood, W. S. Tan, et al.. (2001). Optimisation of AlGaN/GaN Heterostructures for Field Effect Transistors Grown by Metalorganic Vapour Phase Epitaxy. physica status solidi (a). 188(1). 227–231. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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