Sheng Jiang

1.4k total citations
13 papers, 132 citations indexed

About

Sheng Jiang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Sheng Jiang has authored 13 papers receiving a total of 132 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Condensed Matter Physics, 11 papers in Electrical and Electronic Engineering and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Sheng Jiang's work include GaN-based semiconductor devices and materials (13 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (4 papers). Sheng Jiang is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (4 papers). Sheng Jiang collaborates with scholars based in United Kingdom. Sheng Jiang's co-authors include P.A. Houston, Ivor Guiney, D. J. Wallis, C. J. Humphreys, Kean Boon Lee, Tao Wang, Feng Peng, Yuefei Cai, P. A. Houston and Chenqi Zhu and has published in prestigious journals such as Journal of Applied Physics, ACS Applied Materials & Interfaces and IEEE Transactions on Power Electronics.

In The Last Decade

Sheng Jiang

12 papers receiving 126 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Sheng Jiang United Kingdom 8 119 98 52 28 23 13 132
Yannick Baines France 9 139 1.2× 117 1.2× 45 0.9× 29 1.0× 76 3.3× 17 186
Woojin Choi South Korea 6 149 1.3× 155 1.6× 107 2.1× 47 1.7× 14 0.6× 7 200
J. Schmidt Germany 7 67 0.6× 122 1.2× 41 0.8× 16 0.6× 14 0.6× 18 150
B. Krist United States 6 43 0.4× 108 1.1× 50 1.0× 15 0.5× 22 1.0× 8 124
Liu Xinyu China 8 88 0.7× 146 1.5× 36 0.7× 20 0.7× 54 2.3× 50 183
Nathalie Labat France 8 126 1.1× 221 2.3× 48 0.9× 22 0.8× 63 2.7× 48 245
Sung‐Jae Chang South Korea 10 164 1.4× 236 2.4× 88 1.7× 47 1.7× 49 2.1× 47 282
O. Reentilä Finland 6 92 0.8× 70 0.7× 35 0.7× 43 1.5× 56 2.4× 11 133
Xiaoli Tian China 8 66 0.6× 251 2.6× 50 1.0× 30 1.1× 42 1.8× 37 280
F.-W. Yao Taiwan 5 179 1.5× 181 1.8× 59 1.1× 21 0.8× 20 0.9× 8 211

Countries citing papers authored by Sheng Jiang

Since Specialization
Citations

This map shows the geographic impact of Sheng Jiang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sheng Jiang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sheng Jiang more than expected).

Fields of papers citing papers by Sheng Jiang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sheng Jiang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sheng Jiang. The network helps show where Sheng Jiang may publish in the future.

Co-authorship network of co-authors of Sheng Jiang

This figure shows the co-authorship network connecting the top 25 collaborators of Sheng Jiang. A scholar is included among the top collaborators of Sheng Jiang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sheng Jiang. Sheng Jiang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Cai, Yuefei, Chenqi Zhu, Wei Zhong, et al.. (2021). Monolithically Integrated μLEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach. Advanced Materials Technologies. 6(6). 14 indexed citations
2.
Jiang, Sheng, et al.. (2020). Exploring an Approach toward the Intrinsic Limits of GaN Electronics. ACS Applied Materials & Interfaces. 12(11). 12949–12954. 22 indexed citations
3.
Lee, Kean Boon, et al.. (2020). Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects. Journal of Physics D Applied Physics. 54(10). 105104–105104. 12 indexed citations
4.
Jiang, Sheng, et al.. (2020). A 624 V 5 A All‐GaN Integrated Cascode for Power‐Switching Applications. physica status solidi (a). 217(7).
5.
Jiang, Sheng, et al.. (2019). Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors. IEEE Transactions on Electron Devices. 66(4). 1688–1693. 4 indexed citations
6.
Hirshy, H., Sheng Jiang, Kean Boon Lee, et al.. (2019). Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers. IEEE Transactions on Microwave Theory and Techniques. 67(7). 2495–2504. 12 indexed citations
7.
Guiney, Ivor, Sheng Jiang, Penglei Li, et al.. (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics. 123(18). 7 indexed citations
8.
Jiang, Sheng, Kean Boon Lee, Ivor Guiney, et al.. (2017). All-GaN-Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics. 32(11). 8743–8750. 14 indexed citations
9.
Новиков, С. В., Ivor Guiney, Sheng Jiang, et al.. (2016). Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth. 459. 185–188. 11 indexed citations
10.
Miaja, Pablo F., Sheng Jiang, Kean Boon Lee, et al.. (2016). Modelling the closely-coupled cascode switching process. Research Explorer (The University of Manchester). 1–8. 1 indexed citations
11.
Guiney, Ivor, Sheng Jiang, D. J. Wallis, et al.. (2015). Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V. Applied Physics Express. 8(3). 36502–36502. 12 indexed citations
12.
Kb, Lee, Ivor Guiney, Sheng Jiang, et al.. (2015). Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant. Semiconductor Science and Technology. 30(10). 105007–105007. 17 indexed citations
13.
Guiney, Ivor, et al.. (2014). Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics. 116(24). 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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