P.A. Claxton

739 citations

40 papers · 584 indexed · h-index 15

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Semiconductor materials and interfaces
Condensed Matter Physics top 10%

Papers in

Atomic and Molecular Physics, and Optics 38
- Semiconductor Quantum Structures and Devices 36
- Semiconductor materials and interfaces 7
- Quantum and electron transport phenomena 6
Electrical and Electronic Engineering 33
- Semiconductor Lasers and Optical Devices 14
- Photonic and Optical Devices 10
- Semiconductor materials and devices 9
- Advanced Semiconductor Detectors and Materials 7

Co-authors: J.S. Roberts M. S. Skolnick K. J. Nash M.A. Pate J.H. Marsh J. P. R. David L. Eaves F. W. Sheard
Journals: Electronics Letters (8 papers)Applied Physics Letters (7 papers)Semiconductor Science and Technology (5 papers)Journal of Crystal Growth (4 papers)Journal of Applied Physics (2 papers)
Partner nations: United Kingdom United States France

In The Last Decade

P.A. Claxton

38 papers receiving 543 citations

Peers

Countries citing papers authored by P.A. Claxton

Since Specialization

Citations

This map shows the geographic impact of P.A. Claxton's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.A. Claxton with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.A. Claxton more than expected).

Fields of papers citing papers by P.A. Claxton

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.A. Claxton. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.A. Claxton. The network helps show where P.A. Claxton may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P.A. Claxton, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P.A. Claxton Line = papers co-authored together P.A. Claxton links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Defect characterization in GaAlInAs alloys Journal of Applied Physics ·William G. Barber, M. Zazoui, J. C. Bourgoin, R. Grey, A. Powell, P.A. Claxton, Peter Rockett	1992	2
2	X-ray diffraction analysis of superlattices grown on misoriented substrates Journal of Crystal Growth ·Dong-Jin Park, Veli-Matti Airaksinen, Harri Lipsanen, (unknown), P.A. Claxton	1991	6
3	Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes Journal of Electronic Materials ·J.P.R. David, R. Grey, M.A. Pate, P.A. Claxton, J. Woodhead	1991	7
4	Quantum-confined Stark effect in InGaAs/InP multiple quantum wells grown by solid source molecular beam epitaxy Journal of Crystal Growth ·P.A. Claxton, M. Hopkinson, (unknown), G. Hill, M.A. Pate, J. P. R. David	1991	3
5	Low voltage strained layer asymmetric Fabry–Perot reflection modulator Electronics Letters ·J. Woodhead, P.A. Claxton, R. Grey, T.E. Sale, J.P.R. David, Lande Liu, M.A. Pate, G. Hill, P.N. Robson	1990	7
6	Transport and related properties of InP based HBTs P. A. Houston, T.-W. Lee, Rajesh Kumar, G. Hill, M. Hopkinson, P.A. Claxton	1990	1
7	High-field hole transport in strained In_xGa_1-xAs/GaAs modulation-doped quantum wells Semiconductor Science and Technology ·M. Reddy, R. Grey, P.A. Claxton, J. Woodhead	1990	6
8	MBE-grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 200 IEEE Transactions on Electron Devices ·Peter Rockett, M.A. Pate, P.A. Claxton	1990	7
9	Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures Journal of Applied Physics ·R. Grey, J. P. R. David, P.A. Claxton, Carla C. Kato, J. Woodhead	1989	26
10	High-gain GaInP/GaAs heterojunction phototransistor utilising guard-ring structure Electronics Letters ·Weikang Wang, P.A. Claxton, R.C. Woods, D.R. Wight	1989	6
11	Reduction of strain in GaAs grown on CaF2/Si heteroepitaxial substrates Journal of Crystal Growth ·Shin Hashimoto, W. M. Gibson, L. J. Schowalter, A H ISRAEL, P.A. Claxton	1989	0
12	Comparison of the limits in performance of multiple quantum well and Franz-Keldysh InGaAs/InP electroabsorption modulators IEE Proceedings J Optoelectronics ·Tatsumi Higuchi, G. Parry, P.A. Claxton	1989	3
13	Diamagnetism as a probe of exciton localization in quantum wells Physical review. B, Condensed matter ·K. J. Nash, M. S. Skolnick, P.A. Claxton, J.S. Roberts	1989	40
14	Phonon sideband of photoluminescence as a probe of exciton states in a quantum well Physical review. B, Condensed matter ·K. J. Nash, M. S. Skolnick, P.A. Claxton, J.S. Roberts	1989	28
15	Reactive ion etched InP/GaInAs multiple quantum well rib waveguides grown by solid source MBE Electronics Letters ·С.В. Кузьменко, M.A. Pate, P.A. Claxton	1988	5
16	Reduction of Strain in Epitaxial GaAs on CaF₂/Si Substrates MRS Proceedings ·Shin Hashimoto, L. J. Schowalter, Gary A. Smith, A H ISRAEL, W. M. Gibson, P.A. Claxton	1988	4
17	Disordering of Ga _0.47 In _0.53 As/InP multiple quantum well layers by sulphur diffusion Electronics Letters ·I. Pape, P. Li Kam Wa, J.P.R. David, P.A. Claxton, P.N. Robson	1988	20
18	RAMAN SCATTERING IN MBE GaInAs-InP QUANTUM WELLS Le Journal de Physique Colloques ·M. Watt, (unknown), P. D. Hatton, H. Vass, P.A. Claxton, J.S. Roberts	1987	1
19	Improved molecular beam epitaxial growth of InP using solid sources Electronics Letters ·J.S. Roberts, P.A. Claxton, J.P.R. David, J.H. Marsh	1986	14
20	InP/InGaAs double heterostructure bipolar transistors grown by MBE Electronics Letters ·Nur Adibah Farhanah Binti Ismail, P.A. Claxton, J.S. Roberts, Luis-Felipe Gutiérrez, P.A. Houston	1986	19

About P.A. Claxton

P.A. Claxton is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry, Surfaces, Coatings and Films and Computational Mechanics, having authored 40 papers that have together received 584 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (36 papers), Semiconductor Lasers and Optical Devices (14 papers), Photonic and Optical Devices (10 papers), Semiconductor materials and devices (9 papers), Semiconductor materials and interfaces (7 papers), Advanced Semiconductor Detectors and Materials (7 papers), Quantum and electron transport phenomena (6 papers) and Quantum Dots Synthesis And Properties (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (543 citations), Condensed Matter Physics (84 citations), Electrical and Electronic Engineering (396 citations), Materials Chemistry (104 citations) and Biomedical Engineering (52 citations). P.A. Claxton has collaborated with scholars based in United Kingdom, United States and France. Frequent co-authors include J.S. Roberts, M. S. Skolnick, K. J. Nash, M.A. Pate, J.H. Marsh, J. P. R. David, J.S. Roberts, L. Eaves, F. W. Sheard and G. A. Toombs. Their work appears in journals such as Electronics Letters, Applied Physics Letters, Semiconductor Science and Technology, Journal of Crystal Growth and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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