Paul R. Chalker

8.6k citations

280 papers · 6.1k indexed · h-index 42

Electrical and Electronic Engineering top 1%
Materials Chemistry top 1%
Electronic, Optical and Magnetic Materials top 2%
Mechanics of Materials top 1%
Atomic and Molecular Physics, and Optics top 5%

Co-authors: Anthony C. Jones C. Johnston Stephen Taylor S.J. Bull Helen C. Aspinall M. Werner Richard J. Potter Chun Zhao
Topics: Semiconductor materials and devices (150 papers)Electronic and Structural Properties of Oxides (57 papers)GaN-based semiconductor devices and materials (47 papers)
Cited by: Materials Chemistry Condensed Matter Physics Electrical and Electronic Engineering
Journals: Journal of the American Chemical Society Angewandte Chemie International Edition Physical review. B, Condensed matter
Partner nations: United Kingdom China Germany

In The Last Decade

Paul R. Chalker

275 papers receiving 5.9k citations

Peers

Countries citing papers authored by Paul R. Chalker

Since Specialization

Citations

This map shows the geographic impact of Paul R. Chalker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Paul R. Chalker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Paul R. Chalker more than expected).

Fields of papers citing papers by Paul R. Chalker

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Paul R. Chalker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Paul R. Chalker. The network helps show where Paul R. Chalker may publish in the future.

Co-authorship network of co-authors of Paul R. Chalker

This figure shows the co-authorship network connecting the top 25 collaborators of Paul R. Chalker. A scholar is included among the top collaborators of Paul R. Chalker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Paul R. Chalker. Paul R. Chalker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Atomic scale observation of threading dislocations in α-Ga2O3 2024 ·AIP Advances ·(unknown),(unknown),Paul R. Chalker,Rachel A. Oliver,B. Hourahine,Fabien Massabuau	1
2	Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga₂O₃ 2024 ·physica status solidi (b) ·David G. Nicol,S. Reynolds,(unknown),(unknown),John Jarman,Paul R. Chalker,Fabien Massabuau	5
3	Ni/Au contacts to corundum α-Ga₂O₃ 2023 ·Japanese Journal of Applied Physics ·Fabien Massabuau,(unknown),David G. Nicol,John Jarman,Martin Frentrup,Joseph W. Roberts,(unknown),András Kovács,Paul R. Chalker,Rachel A. Oliver	3
4	Hydrogen-related 3.8 eV UV luminescence in α -Ga2O3 2023 ·Applied Physics Letters ·David G. Nicol,Yuichi Oshima,Joseph W. Roberts,(unknown),Douglas Cameron,Paul R. Chalker,Robert Martin,Fabien Massabuau	12
5	Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters 2019 ·Japanese Journal of Applied Physics ·(unknown),Qinglei Bu,Yutao Cai,Ruize Sun,Wen Liu,Huiqing Wen,Sang Lam,Yung C. Liang,Ivona Z. Mitrović,Stephen Taylor,Paul R. Chalker,Cezhou Zhao	37
6	Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors 2019 ·Journal of Applied Physics ·(unknown),(unknown),(unknown),(unknown),Lee Kb,P. A. Houston,Paul R. Chalker,S. Tripathy,Richard J. Potter	11
7	Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs 2018 ·Journal of Applied Physics ·(unknown),(unknown),(unknown),Ivor Guiney,(unknown),Sheng Jiang,(unknown),Penglei Li,D. J. Wallis,C. J. Humphreys,Paul R. Chalker,P.A. Houston	7
8	A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density 2018 ·Journal of Physics D Applied Physics ·Jidong Jin,Jiawei Zhang,Andrew Shaw,(unknown),Ivona Z. Mitrović,(unknown),Paul R. Chalker,Claudio Balocco,Aimin Song,S. Hall	6
9	Total Dose Effects and Bias Instabilities of (NH₄)₂S Passivated Ge MOS Capacitors With Hf_{<italic>x</italic>}Zr_{1–<italic>x</italic>}O_{<italic>y</italic>}Thin Films 2017 ·IEEE Transactions on Nuclear Science ·(unknown),Yuxiao Fang,Ce Zhao,Chun Zhao,(unknown),Yanfei Qi,Ruowei Yi,Yang Li,Ivona Z. Mitrović,Stephen Taylor,Paul R. Chalker	3
10	The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM 2017 ·Applied Physics Letters ·Naser Sedghi,Hongfei Li,(unknown),Karl Dawson,Richard J. Potter,Yuzheng Guo,James T. Gibbon,V.R. Dhanak,Weidong Zhang,JF Zhang,John Robertson,S. Hall,Paul R. Chalker	64
11	Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices 2016 ·Vacuum ·(unknown),Yanfei Qi,Ce Zhao,(unknown),(unknown),Stephen Taylor,Paul R. Chalker	2
12	Tunnel-barrier rectifiers for optical nantennas 2016 ·ePrints Soton (University of Southampton) ·Ivona Z. Mitrović,Ayendra Weerakkody,Naser Sedghi,S. Hall,Jason F. Ralph,(unknown),Paul R. Chalker,Zhenhua Luo,Steve Beeby	2
13	Silver Ink Formulations for Sinter-free Printing of Conductive Films 2016 ·Scientific Reports ·Kate Black,(unknown),(unknown),(unknown),Christopher J. Sutcliffe,Paul R. Chalker	64
14	Atomic-layer deposited thulium oxide as a passivation layer on germanium 2015 ·Journal of Applied Physics ·Ivona Z. Mitrović,S. Hall,(unknown),David Hesp,V.R. Dhanak,A. Santoni,Ayendra Weerakkody,Naser Sedghi,Paul R. Chalker,Christoph Henkel,E. Dentoni Litta,Per‐Erik Hellström,Mikael Östling,Hui Ling Tan,Sylvie Schamm‐Chardon	6
15	Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates 2015 ·Materials ·(unknown),(unknown),Joseph W. Roberts,(unknown),V.R. Dhanak,(unknown),Chun Zhao,Ce Zhao,Qian Zhang,Yang Li,Ivona Z. Mitrović,Stephen Taylor,Paul R. Chalker	21
16	Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm 2014 ·Materials ·Chun Zhao,Ce Zhao,Stephen Taylor,Paul R. Chalker	124
17	Dielectric Relaxation of Lanthanide‐Based Ternary Oxides: Physical and Mathematical Models 2012 ·Journal of Nanomaterials ·Chun Zhao,Jing Tao,M. Werner,S. Taylor,Paul R. Chalker	16
18	Liquid injection atomic layer deposition of silver nanoparticles 2010 ·Nanotechnology ·Paul R. Chalker,S. Romani,Pamela A. Marshall,M. J. Rosseinsky,S. Rushworth,Paul A. Williams	48
19	Quest for an optimal gadolinium silicate gate dielectric stack 2008 ·Chalmers Publication Library (Chalmers University of Technology) ·Ivona Z. Mitrović,(unknown),(unknown),S. Hall,Paul R. Chalker,H.D.B. Gottlob,Max C. Lemme,Olof Engström,K. Cherkaoui,Paul K. Hurley	1
20	Defects in oxide overlayers at nickel single-crystal surfaces 1985 ·Proceedings of the Royal Society of London A Mathematical and Physical Sciences ·Albert F. Carley,Paul R. Chalker,M. W. Roberts	53

About Paul R. Chalker

Paul R. Chalker is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering, having authored 280 papers that have together received 6.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (150 papers), Electronic and Structural Properties of Oxides (57 papers) and GaN-based semiconductor devices and materials (47 papers). The work is most often cited by research in Materials Chemistry (3.4k citations), Condensed Matter Physics (717 citations) and Electrical and Electronic Engineering (3.4k citations). Paul R. Chalker has collaborated with scholars based in United Kingdom, China and Germany. Frequent co-authors include Anthony C. Jones, C. Johnston, Stephen Taylor, S.J. Bull, Helen C. Aspinall, M. Werner, Richard J. Potter, Chun Zhao, D.S. Rickerby and Ivona Z. Mitrović. Their work appears in journals such as Journal of the American Chemical Society, Angewandte Chemie International Edition and Physical review. B, Condensed matter.

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