Dunjun Chen

2.9k total citations · 1 hit paper
171 papers, 2.2k citations indexed

About

Dunjun Chen is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Dunjun Chen has authored 171 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 138 papers in Condensed Matter Physics, 98 papers in Electrical and Electronic Engineering and 88 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Dunjun Chen's work include GaN-based semiconductor devices and materials (138 papers), Ga2O3 and related materials (88 papers) and ZnO doping and properties (38 papers). Dunjun Chen is often cited by papers focused on GaN-based semiconductor devices and materials (138 papers), Ga2O3 and related materials (88 papers) and ZnO doping and properties (38 papers). Dunjun Chen collaborates with scholars based in China, Japan and United States. Dunjun Chen's co-authors include Hai Lu, Rong Zhang, Youdou Zheng, Rong Zhang, Youdou Zheng, Bin Liu, Zili Xie, Fangfang Ren, Weizong Xu and Jin Wang and has published in prestigious journals such as Advanced Materials, Nature Communications and Applied Physics Letters.

In The Last Decade

Dunjun Chen

156 papers receiving 2.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

2021 349 citations Qing Cai, Haifan You et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Dunjun Chen China	23	1.5k	1.2k	1.1k	853	429	171	2.2k
Youdou Zheng China	24	960 0.6×	1.1k 0.9×	925 0.9×	1.2k 1.4×	350 0.8×	146	2.1k
C. Bayram United States	25	1.4k 0.9×	752 0.6×	747 0.7×	847 1.0×	483 1.1×	95	2.0k
Haiqiang Jia China	19	1.0k 0.7×	511 0.4×	645 0.6×	791 0.9×	306 0.7×	126	1.5k
Neeraj Nepal United States	35	2.2k 1.5×	1.5k 1.3×	1.3k 1.3×	1.7k 1.9×	758 1.8×	128	3.2k
Yuanjie Lv China	27	810 0.5×	1.7k 1.4×	786 0.7×	1.5k 1.8×	119 0.3×	124	2.3k
Virginia D. Wheeler United States	30	413 0.3×	1.1k 0.9×	1.2k 1.1×	1.5k 1.8×	560 1.3×	128	2.7k
Yaonan Hou United Kingdom	19	257 0.2×	808 0.7×	694 0.6×	871 1.0×	229 0.5×	60	1.4k
V. Adivarahan United States	41	3.6k 2.4×	2.0k 1.7×	1.6k 1.5×	1.3k 1.5×	1.0k 2.3×	114	4.0k
M. Pavesi Italy	18	443 0.3×	409 0.3×	818 0.8×	527 0.6×	188 0.4×	86	1.3k
A. Chitnis United States	26	1.7k 1.1×	964 0.8×	634 0.6×	653 0.8×	593 1.4×	38	1.9k

Countries citing papers authored by Dunjun Chen

Since Specialization

Citations

This map shows the geographic impact of Dunjun Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dunjun Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dunjun Chen more than expected).

Fields of papers citing papers by Dunjun Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dunjun Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dunjun Chen. The network helps show where Dunjun Chen may publish in the future.

Co-authorship network of co-authors of Dunjun Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Dunjun Chen. A scholar is included among the top collaborators of Dunjun Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dunjun Chen. Dunjun Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Xu, Weizong, Dong Zhou, Danfeng Pan, et al.. (2025). 4H-SiC-Based Low-Noise Front-End Charge Coupling Transistor for 0.9% Radiation Energy Resolution. IEEE Transactions on Electron Devices. 72(7). 3915–3919. 1 indexed citations

Guo, Hui, Na Sun, Pengfei Shao, et al.. (2025). Electric field modulation and hot-electron suppression in AlGaN/GaN HEMTs on Si using a hybrid p-NiO RESURF-FP termination. Journal of Physics D Applied Physics. 58(35). 355104–355104.

Li, Zhenhua, Tao Tao, Zili Xie, et al.. (2024). Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 125(11). 1 indexed citations

Xu, Linling, Hui Guo, Jiaqi Tao, et al.. (2024). Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs. Chemistry - A European Journal. 30(27). e202304100–e202304100. 2 indexed citations

Wang, Yifu, Weizong Xu, Dong Zhou, et al.. (2024). 4H-SiC Tetra-Lateral Position Sensitive Detector for Ultraviolet Measurements. IEEE Transactions on Electron Devices. 71(8). 4829–4833. 3 indexed citations

You, Haifan, Yifu Wang, Yiwang Wang, et al.. (2024). High-Performance p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors With fW-Level Weak Light Detection Capacity. IEEE Electron Device Letters. 45(10). 1899–1902. 2 indexed citations

Zhou, Feng, Quanyou Chen, Xiaofeng Lyu, et al.. (2024). Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness. 526–529. 2 indexed citations

Zhi, Ting, Rui Wang, Jin Wang, et al.. (2024). Engineering Charge Separation in α-Ga₂O₃ Nanorod Arrays for Photoelectrochemical UV Detection. ACS Applied Nano Materials. 7(14). 16018–16030. 1 indexed citations

Ge, Mei, et al.. (2024). TCAD Simulation of an E-Mode Heterojunction Bipolar p-FET with Imax > 240 mA/mm. Electronics. 13(23). 4752–4752.

10.

Bao, Huaguang, et al.. (2024). Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver. IEEE Transactions on Microwave Theory and Techniques. 73(2). 812–820. 4 indexed citations

11.

Zhang, Xianfei, Zili Xie, Xiangqian Xiu, et al.. (2024). GaN microdisks with a single porous optical confinement layer for whispering gallery mode lasing. Applied Physics Letters. 125(9).

12.

Chen, Kai, Xiangqian Xiu, Pengfei Shao, et al.. (2024). β-Ga₂O₃ nanotube arrays for high-performance self-powered ultraviolet photoelectrochemical photodetectors. Nanotechnology. 35(17). 175205–175205. 3 indexed citations

13.

Xu, Weizong, Renjie Xu, Dong Zhou, et al.. (2023). GaN-Based Low-Energy X-Ray Single Photon Detector With Photon Energy Resolution and Fast Response. IEEE Photonics Technology Letters. 36(2). 123–126. 2 indexed citations

14.

Li, Zhenhua, Pengfei Shao, Tao Tao, et al.. (2021). Plasma assisted molecular beam epitaxy growth mechanism of AlGaN epilayers and strain relaxation on AlN templates. Japanese Journal of Applied Physics. 60(7). 75504–75504. 11 indexed citations

15.

Cai, Qing, Pengfei Shao, Danfeng Pan, et al.. (2021). Low-Voltage p-i-n GaN-Based Alpha-Particle Detector With High Energy Resolution. IEEE Electron Device Letters. 42(12). 1755–1758. 9 indexed citations

16.

You, Haifan, Qing Cai, Hui Guo, et al.. (2021). A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance. IEEE photonics journal. 13(3). 1–8. 7 indexed citations

17.

Huang, Yi, Jinpeng Li, Weizhong Chen, et al.. (2021). High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design. Optical and Quantum Electronics. 53(3). 9 indexed citations

18.

Cai, Qing, Hui Guo, Jin Wang, et al.. (2020). Direct observation of reach-through behavior in back-illuminated algan avalanche photodiode with separate absorption and multiplication structure. Journal of Physics D Applied Physics. 53(42). 425101–425101. 5 indexed citations

19.

Cheng, Liang, Weizong Xu, Danfeng Pan, et al.. (2020). Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiN _x. Journal of Physics D Applied Physics. 54(1). 15105–15105. 9 indexed citations

20.

Cheng, Liang, Weizong Xu, Danfeng Pan, et al.. (2019). Gate-first process compatible, high-quality in situ SiN _x for surface passivation and gate dielectrics in AlGaN/GaN MISHEMTs. Journal of Physics D Applied Physics. 52(30). 305105–305105. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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