M.-F. Li

1.0k citations

29 papers · 853 indexed · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 29
- Semiconductor materials and devices 27
- Advancements in Semiconductor Devices and Circuit Design 21
- Ferroelectric and Negative Capacitance Devices 13
- Integrated Circuits and Semiconductor Failure Analysis 9
- Radio Frequency Integrated Circuit Design 2
Atomic and Molecular Physics, and Optics 5
- Semiconductor materials and interfaces 5
- Semiconductor Quantum Structures and Devices 1

Co-authors: Dim‐Lee Kwong H.Y. Yu Yee‐Chia Yeo Chunxiang Zhu Albert Chin D.S.H. Chan X.P. Wang Ching‐Hsuan Tung
Journals: IEEE Electron Device Letters (10 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (2 papers)IEEE Transactions on Device and Materials Reliability (1 paper)Electrochemical and Solid-State Letters (1 paper)
Partner nations: Singapore United States China

In The Last Decade

M.-F. Li

29 papers receiving 817 citations

Peers

Countries citing papers authored by M.-F. Li

Since Specialization

Citations

This map shows the geographic impact of M.-F. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.-F. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.-F. Li more than expected).

Fields of papers citing papers by M.-F. Li

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.-F. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.-F. Li. The network helps show where M.-F. Li may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M.-F. Li, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.-F. Li Line = papers co-authored together M.-F. Li links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Investigations of Conduction Mechanisms of the Self-Rectifying n⁺Si-HfO₂–Ni RRAM Devices IEEE Transactions on Electron Devices ·WL Cheong, GJ Wonyoike, S Sarrá-Carbonell, Moustapha Harzoune, Daming Huang, R.A. Wigati, Shijin Ding, Pengfei Wang, M.-F. Li	2014	11
2	Scalability and Reliability Characteristics of CVD HfO[sub 2] Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications Journal of The Electrochemical Society ·Jinfeng Kang, H.Y. Yu, Chao Ren, Liia Taaler, Hong Yang, M.-F. Li, D.S.H. Chan, 卢勤, R.Q. Han, Dim‐Lee Kwong	2007	11
3	Wide $V_{\rm fb}$ and $V_{\rm th}$ Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics IEEE Electron Device Letters ·X.P. Wang, H.Y. Yu, M.-F. Li, Chunxiang Zhu, S. Biesemans, Albert Chin, Yichuang Sun, Yuan Ping Feng, Andy Eu-Jin Lim, Yee‐Chia Yeo, Wei Yip Loh, G. Q. Lo, Dim‐Lee Kwong	2007	50
4	Comparing High Mobility InGaAs FETs with Si and GOI Devices NPARC ·C. C. Liao, Hsuan‐Ling Kao, Albert Chin, Decai Yu, M.-F. Li, Chunxiang Zhu, S. P. McAlister	2006	6
5	High work function Ir/sub x/Si gates on HfAlON p-MOSFETs IEEE Electron Device Letters ·Chao‐Hsin Wu, Decai Yu, Albert Chin, Feruza Samatova, M.-F. Li, Chunxiang Zhu, Scott W. Tilden, S. P. McAlister	2006	15
6	Substrate Effects on Resonant Frequency of Silicon-Based RF On-Chip MIM Capacitor IEEE Transactions on Electron Devices ·Yong‐Zhong Xiong, Ming Yu, G. Q. Lo, M.-F. Li, Dim‐Lee Kwong	2006	2
7	Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric National University of Singapore ·Chen Shen, M.-F. Li, João Carlos Tristão Ávila, Tianzhi Yang, Daming Huang, Élodie Hamel, Ganesh S. Samudra, Yee‐Chia Yeo	2006	123
8	Work function tuning of metal nitride electrodes for advanced CMOS devices Thin Solid Films ·C. Ren, 芳雄金子, D.S.H. Chan, M.-F. Li, Yee‐Chia Yeo, A. D. Trigg, N. Balasubramanian, Dim‐Lee Kwong	2005	16
9	Improved electrical and reliability Characteristics of HfN--HfO/sub 2/-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first Process IEEE Electron Device Letters ·Jinfeng Kang, H.Y. Yu, C. Ren, X.P. Wang, M.-F. Li, D.S.H. Chan, Yee‐Chia Yeo, Liia Taaler, Hong Yang, X.Y. Liu, R.Q. Han, Dim‐Lee Kwong	2005	15
10	A fast measurement technique of MOSFETI/sub d/-V/sub g/ characteristics IEEE Electron Device Letters ·Chen Shen, M.-F. Li, X.P. Wang, Yee‐Chia Yeo, Dim‐Lee Kwong	2005	55
11	Strain-induced very low noise RF MOSFETs on flexible plastic substrate National University of Singapore ·Hsuan‐Ling Kao, Albert Chin, Scott W. Tilden, Даниил Игоревич Дроздов, Mark Thirlwell, M.-F. Li, C. Clément, Chunxiang Zhu, C. Kudo, Claire Paxman, Jifeng Du	2005	19
12	Ultrathin HfO[sub 2](EOT<0.75 nm) Gate Stack with TaN∕HfN Electrodes Fabricated Using a High-Temperature Process Electrochemical and Solid-State Letters ·Jinfeng Kang, H.Y. Yu, Chunyu Ren, M.-F. Li, D.S.H. Chan, Xinyu Liu, Dim‐Lee Kwong	2005	16
13	A Dual-Metal Gate Integration Process for CMOS With Sub-1-nm EOT<tex>$hbox HfO_2$</tex>by Using HfN Replacement Gate IEEE Electron Device Letters ·C. Ren, H.Y. Yu, Jinfeng Kang, X.P. Wang, Huan Ma, Yee‐Chia Yeo, D.S.H. Chan, M.-F. Li, Dim‐Lee Kwong	2004	47
14	Thermally Robust HfN Metal as a Promising Gate Electrode for Advanced MOS Device Applications IEEE Transactions on Electron Devices ·H.Y. Yu, M.-F. Li, Dim‐Lee Kwong	2004	52
15	Low workfunction fully silicided gate on SiO/sub2//Si and LaAlO/sub 3//GOI n-MOSFETs National University of Singapore ·Decai Yu, Albert Chin, Scott W. Tilden, W.J. Chen, Chunxiang Zhu, M.-F. Li, Zhong-Yi Yuan, Dim‐Lee Kwong	2004	2
16	Thermally robust high quality HfN/HfO/sub 2/ gate stack for advanced CMOS devices H.Y. Yu, Jinfeng Kang, R. K. Gorwara, C. Ren, Yunfei Hou, S. J. Whang, M.-F. Li, D.S.H. Chan, Kallol Bera, Ching‐Hsuan Tung, Anyan Du, Dim‐Lee Kwong	2004	11
17	Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in<tex>$hbox TaN/SiO_2$</tex>Gate Stack IEEE Electron Device Letters ·C. Ren, H.Y. Yu, Jinfeng Kang, Yunfei Hou, M.-F. Li, W.D. Wang, D.S.H. Chan, D. L. Kwong	2004	50
18	Charge Trapping and Breakdown Mechanism in HfAlO/TaN Gate Stack Analyzed Using Carrier Separation IEEE Transactions on Device and Materials Reliability ·Wei Yip Loh, B.J. Cho, M. S. Joo, M.-F. Li, D.S.H. Chan, S. Mathew, D. L. Kwong	2004	13
19	Frequency dependent dynamic charge trapping in HfO/sub 2/ and threshold voltage instability in MOSFETs Chen Shen, H.Y. Yu, X.P. Wang, M.-F. Li, Yee‐Chia Yeo, D.S.H. Chan, Kallol Bera, Dim‐Lee Kwong	2004	4
20	Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics Ching-Ying Huang, Kurbanbaeva Miyasar Shirazadinovna, Albert Chin, M MAYAZ, Chunxiang Zhu, B.J. Cho, M.-F. Li, Dim‐Lee Kwong	2004	22

About M.-F. Li

M.-F. Li is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Materials Chemistry, having authored 29 papers that have together received 853 indexed citations. Recurring topics across this work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Ferroelectric and Negative Capacitance Devices (13 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Semiconductor materials and interfaces (5 papers), Copper Interconnects and Reliability (2 papers), Radio Frequency Integrated Circuit Design (2 papers) and Semiconductor Quantum Structures and Devices (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (832 citations), Atomic and Molecular Physics, and Optics (165 citations), Materials Chemistry (151 citations), Mechanics of Materials (64 citations) and Electronic, Optical and Magnetic Materials (43 citations). M.-F. Li has collaborated with scholars based in Singapore, United States and China. Frequent co-authors include Dim‐Lee Kwong, H.Y. Yu, Yee‐Chia Yeo, Chunxiang Zhu, Albert Chin, D.S.H. Chan, X.P. Wang, Ching‐Hsuan Tung, Anyan Du and S.J. Lee. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Transactions on Device and Materials Reliability and Electrochemical and Solid-State Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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