T. Mollenhauer

610 total citations
38 papers, 465 citations indexed

About

T. Mollenhauer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, T. Mollenhauer has authored 38 papers receiving a total of 465 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 8 papers in Biomedical Engineering. Recurrent topics in T. Mollenhauer's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). T. Mollenhauer is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). T. Mollenhauer collaborates with scholars based in Germany, Switzerland and United States. T. Mollenhauer's co-authors include T. Wahlbrink, H. Kurz, Max C. Lemme, H.D.B. Gottlob, J.K. Efavi, M. Schmidt, Jens Bolten, T. J. Echtermeyer, Nikolaj Moll and W. Henschel and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Optics Express.

In The Last Decade

T. Mollenhauer

37 papers receiving 434 citations

Peers

Countries citing papers authored by T. Mollenhauer

Since Specialization

Citations

This map shows the geographic impact of T. Mollenhauer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Mollenhauer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Mollenhauer more than expected).

Fields of papers citing papers by T. Mollenhauer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Mollenhauer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Mollenhauer. The network helps show where T. Mollenhauer may publish in the future.

Co-authorship network of co-authors of T. Mollenhauer

This figure shows the co-authorship network connecting the top 25 collaborators of T. Mollenhauer. A scholar is included among the top collaborators of T. Mollenhauer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Mollenhauer. T. Mollenhauer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Total Oxidation of Propane by using Platinum‐Group‐Metal Catalysts Recovered from Fuel‐Cell Recycling 2013 ·Energy Technology ·T. Mollenhauer, Peter Scholz, Bernd Ondruschka	1
2	Wet air oxidation of waste water sludge 2012 ·(unknown), (unknown), Stephen Tallon, Owen J. Catchpole, T. Mollenhauer	1
3	Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator 2010 ·Optics Express ·(unknown), Thilo Stöferle, Nikolaj Moll, Rainer F. Mahrt, Marcus S. Dahlem, T. Wahlbrink, Jens Bolten, T. Mollenhauer, H. Kurz, Bert Jan Offrein	22
4	Process Engineering Study of the Homogenously Catalyzed Biodiesel Synthesis in a Bubble Column Reactor 2010 ·Industrial & Engineering Chemistry Research ·T. Mollenhauer, (unknown), (unknown), Bernd Ondruschka, (unknown)	4
5	Ultracompact Silicon/Polymer Laser with an Absorption-Insensitive Nanophotonic Resonator 2010 ·Nano Letters ·Thilo Stöferle, Nikolaj Moll, T. Wahlbrink, Jens Bolten, T. Mollenhauer, Ullrich Scherf, Rainer F. Mahrt	18
6	PECVD grown Ge nanocrystals embedded in SiO2: From disordered to templated self-organization 2009 ·Microelectronics Journal ·Robby Peibst, T. Dürkop, E. Bugiel, (unknown), T. Mollenhauer, Max C. Lemme, H. Kurz, K.R. Hofmann	4
7	CMOS compatible cost-efficient fabrication of SOI grating couplers 2008 ·Microelectronic Engineering ·Jens Bolten, Jens Hofrichter, Nikolaj Moll, (unknown), Folkert Horst, Bert Jan Offrein, T. Wahlbrink, T. Mollenhauer, H. Kurz	15
8	Leakage Current Mechanisms in Epitaxial Gd[sub 2]O[sub 3] High-k Gate Dielectrics 2008 ·Electrochemical and Solid-State Letters ·H.D.B. Gottlob, T. J. Echtermeyer, M. Schmidt, T. Mollenhauer, T. Wahlbrink, Max C. Lemme, H. Kurz	9
9	Fabrication and characterization of Ta2O5 photonic feedback structures 2008 ·Microelectronic Engineering ·T. Wahlbrink, Jens Bolten, T. Mollenhauer, H. Kurz, Kristian Baumann, Nikolaj Moll, Thilo Stöferle, Rainer F. Mahrt	9
10	Organic mixed-order photonic crystal lasers with ultrasmall footprint 2007 ·Applied Physics Letters ·Kristian Baumann, Thilo Stöferle, Nikolaj Moll, Rainer F. Mahrt, T. Wahlbrink, Jens Bolten, T. Mollenhauer, Christian Moormann, Ullrich Scherf	22
11	Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes 2007 ·Solid-State Electronics ·T. J. Echtermeyer, H.D.B. Gottlob, T. Wahlbrink, T. Mollenhauer, M. Schmidt, J.K. Efavi, Max C. Lemme, H. Kurz	15
12	0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes 2006 ·IEEE Electron Device Letters ·H.D.B. Gottlob, T. J. Echtermeyer, M. Schmidt, T. Mollenhauer, J.K. Efavi, T. Wahlbrink, Max C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten, H. Kurz	36
13	Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics 2006 ·H.D.B. Gottlob, T. J. Echtermeyer, T. Mollenhauer, M. Schmidt, J.K. Efavi, T. Wahlbrink, Max C. Lemme, H. Kurz, (unknown), (unknown), Udo Schwalke, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten	2
14	Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics 2006 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·H.D.B. Gottlob, T. Mollenhauer, T. Wahlbrink, M. Schmidt, T. J. Echtermeyer, J.K. Efavi, Max C. Lemme, H. Kurz	6
15	Introduction of crystalline high-k gate dielectrics in a CMOS process 2005 ·Journal of Non-Crystalline Solids ·H.D.B. Gottlob, Max C. Lemme, T. Mollenhauer, T. Wahlbrink, J.K. Efavi, H. Kurz, (unknown), (unknown), Rama Komaragiri, (unknown), (unknown), Udo Schwalke	13
16	Subthreshold characteristics of p-type triple-gate MOSFETs 2004 ·Max C. Lemme, T. Mollenhauer, W. Henschel, T. Wahlbrink, H.D.B. Gottlob, J.K. Efavi, M. Baus, (unknown), Bernd Spangenberg, H. Kurz	10
17	Investigation of NiAlN as gate-material for submicron CMOS technology 2004 ·Microelectronic Engineering ·J.K. Efavi, Max C. Lemme, T. Mollenhauer, T. Wahlbrink, T. Bobek, Dong Wang, H.D.B. Gottlob, H. Kurz	1
18	Comparison of metal gate electrodes on MOCVD HfO2 2004 ·Microelectronics Reliability ·Max C. Lemme, J.K. Efavi, H.D.B. Gottlob, T. Mollenhauer, T. Wahlbrink, H. Kurz	5
19	Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates 2004 ·Solid-State Electronics ·W. Henschel, T. Wahlbrink, Yordan M. Georgiev, Max C. Lemme, T. Mollenhauer, B. Vratzov, Andreas Fuchs, H. Kurz, (unknown), Frank Schwierz	4
20	Fabrication of 12 nm electrically variable shallow junction metal–oxide–semiconductor field effect transistors on silicon on insulator substrates 2003 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. Henschel, T. Wahlbrink, Yordan M. Georgiev, Max C. Lemme, T. Mollenhauer, B. Vratzov, Andreas Fuchs, H. Kurz	8

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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