S. J. Whang

548 total citations
16 papers, 441 citations indexed

About

S. J. Whang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, S. J. Whang has authored 16 papers receiving a total of 441 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 4 papers in Biomedical Engineering. Recurrent topics in S. J. Whang's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Semiconductor materials and interfaces (9 papers). S. J. Whang is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Semiconductor materials and interfaces (9 papers). S. J. Whang collaborates with scholars based in Singapore, United States and South Korea. S. J. Whang's co-authors include Dim‐Lee Kwong, Chunxiang Zhu, Albert Chin, Nan Wu, S.J. Lee, Byung Jin Cho, Qingchun Zhang, Dim-Lee Kwong, An Du and Ching‐Hsuan Tung and has published in prestigious journals such as Applied Physics Letters, Nanotechnology and Japanese Journal of Applied Physics.

In The Last Decade

S. J. Whang

16 papers receiving 422 citations

Peers

S. J. Whang
J. Yugami Japan
Eugene Delenia United States
J. Johnson United States
H.-J. Wann United States
Devin Verreck Belgium
A. Bryant United States
Slimane Oussalah Algeria
M. Togo Japan
C. Kuo United States
E. Sangiorgi Italy
J. Yugami Japan
S. J. Whang
Citations per year, relative to S. J. Whang S. J. Whang (= 1×) peers J. Yugami

Countries citing papers authored by S. J. Whang

Since Specialization
Citations

This map shows the geographic impact of S. J. Whang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. J. Whang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. J. Whang more than expected).

Fields of papers citing papers by S. J. Whang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. J. Whang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. J. Whang. The network helps show where S. J. Whang may publish in the future.

Co-authorship network of co-authors of S. J. Whang

This figure shows the co-authorship network connecting the top 25 collaborators of S. J. Whang. A scholar is included among the top collaborators of S. J. Whang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. J. Whang. S. J. Whang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Aritome, S., S. J. Whang, Ki-Hong Lee, et al.. (2012). A novel three-dimensional dual control-gate with surrounding floating-gate (DC-SF) NAND flash cell. Solid-State Electronics. 79. 166–171. 7 indexed citations
2.
Kim, Minsoo, et al.. (2011). CVD-cobalt for low resistance word line electrode of 3D NAND flash memory. 1–3. 5 indexed citations
3.
Whang, S. J., et al.. (2010). Thermally Stable NiSi Gate Electrode with TiN Barrier Metal for High-Density NAND Flash Memory Devices. Japanese Journal of Applied Physics. 49(4S). 04DA17–04DA17. 2 indexed citations
4.
Whang, S. J., Ki-Hong Lee, Minsoo Kim, et al.. (2010). Novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell for 1Tb file storage application. 29.7.1–29.7.4. 63 indexed citations
5.
6.
Chin, Hock-Chun, Ming Zhu, S. J. Whang, et al.. (2008). In-Situ Surface Passivation and Metal-Gate/High-κDielectric Stack Formation for N-channel Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors. National University of Singapore. 26–27. 3 indexed citations
7.
Yang, Weifeng, et al.. (2008). Electrical transport of bottom-up grown single-crystal Si1−xGexnanowire. Nanotechnology. 19(22). 225203–225203. 6 indexed citations
8.
9.
Whang, S. J., S. J. Lee, Weifeng Yang, Byung Jin Cho, & Dim‐Lee Kwong. (2007). Study on the synthesis of high quality single crystalline Si1−xGex nanowire and its transport properties. Applied Physics Letters. 91(7). 20 indexed citations
10.
Yang, Weifeng, et al.. (2007). Schottky-Barrier Si Nanowire MOSFET: Effects of Source/Drain Metals and Gate Dielectrics. MRS Proceedings. 1017. 7 indexed citations
11.
Gao, Fei, S. J. Lee, Rui Li, et al.. (2006). GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack. National University of Singapore. 96. 1–4. 12 indexed citations
12.
13.
Yu, H.Y., Jinfeng Kang, C. Ren, et al.. (2004). Thermally robust high quality HfN/HfO/sub 2/ gate stack for advanced CMOS devices. 4.5.1–4.5.4. 11 indexed citations
14.
Wu, Nan, Qingchun Zhang, Chunxiang Zhu, et al.. (2004). Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate. Applied Physics Letters. 84(19). 3741–3743. 124 indexed citations
15.
Zhu, Shiyang, H.Y. Yu, S. J. Whang, et al.. (2004). Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode. IEEE Electron Device Letters. 25(5). 268–270. 88 indexed citations
16.
Zhu, Shiyang, H.Y. Yu, S. J. Whang, et al.. (2004). Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode. Solid-State Electronics. 48(10-11). 1987–1992. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by J. Yugami Breakdown of academic impact, for papers by Eugene Delenia Breakdown of academic impact, for papers by J. Johnson Breakdown of academic impact, for papers by H.-J. Wann Breakdown of academic impact, for papers by Devin Verreck Breakdown of academic impact, for papers by A. Bryant Breakdown of academic impact, for papers by Slimane Oussalah Breakdown of academic impact, for papers by M. Togo Breakdown of academic impact, for papers by C. Kuo Breakdown of academic impact, for papers by E. Sangiorgi
Rankless by CCL
2026