W.D. Wang

711 total citations
28 papers, 600 citations indexed

About

W.D. Wang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, W.D. Wang has authored 28 papers receiving a total of 600 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in W.D. Wang's work include Semiconductor materials and devices (15 papers), Semiconductor materials and interfaces (10 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). W.D. Wang is often cited by papers focused on Semiconductor materials and devices (15 papers), Semiconductor materials and interfaces (10 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). W.D. Wang collaborates with scholars based in Singapore, United States and China. W.D. Wang's co-authors include Dim‐Lee Kwong, H.Y. Yu, Chunxiang Zhu, Dongzhi Chi, M.-F. Li, H.F. Lim, D.S.H. Chan, M. F. Li, M.F. Li and Anyan Du and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W.D. Wang

28 papers receiving 587 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W.D. Wang Singapore 13 474 225 138 108 76 28 600
Kunikazu Izumi Japan 13 479 1.0× 230 1.0× 97 0.7× 94 0.9× 31 0.4× 46 619
James G. Ryan United States 10 224 0.5× 117 0.5× 142 1.0× 66 0.6× 82 1.1× 25 352
P. S. Brody United States 10 308 0.6× 407 1.8× 158 1.1× 191 1.8× 29 0.4× 40 604
Michael Balinskiy United States 8 142 0.3× 134 0.6× 152 1.1× 152 1.4× 20 0.3× 19 386
И. А. Тамбасов Russia 11 139 0.3× 136 0.6× 111 0.8× 72 0.7× 18 0.2× 38 320
Keisaku Yamada Japan 15 618 1.3× 229 1.0× 52 0.4× 79 0.7× 47 0.6× 79 757
W. Zhang Belgium 8 276 0.6× 61 0.3× 104 0.8× 63 0.6× 50 0.7× 14 354
Le Yu China 12 167 0.4× 96 0.4× 145 1.1× 66 0.6× 19 0.3× 27 357
Howard R. Beratan United States 11 183 0.4× 204 0.9× 47 0.3× 60 0.6× 36 0.5× 25 368
Choong-Un Kim United States 12 382 0.8× 111 0.5× 108 0.8× 85 0.8× 45 0.6× 29 460

Countries citing papers authored by W.D. Wang

Since Specialization
Citations

This map shows the geographic impact of W.D. Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.D. Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.D. Wang more than expected).

Fields of papers citing papers by W.D. Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.D. Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.D. Wang. The network helps show where W.D. Wang may publish in the future.

Co-authorship network of co-authors of W.D. Wang

This figure shows the co-authorship network connecting the top 25 collaborators of W.D. Wang. A scholar is included among the top collaborators of W.D. Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W.D. Wang. W.D. Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Abdelraouf, Omar A. M., et al.. (2023). All‐Optical Switching of Structural Color with a Fabry–Pérot Cavity. SHILAP Revista de lepidopterología. 4(11). 16 indexed citations
2.
Kim, Jy, Mingxi Chen, W.D. Wang, et al.. (2022). Strong (110) Texturing and Heteroepitaxial Growth of Thin Mo Films on MoS2 Monolayer. ACS Applied Electronic Materials. 4(10). 5026–5033. 3 indexed citations
3.
Cao, Jing, Jie Zheng, Chee Kiang Ivan Tan, et al.. (2022). Flexible elemental thermoelectrics with ultra-high power density. Materials Today Energy. 25. 100964–100964. 45 indexed citations
4.
Nemati, Arash, et al.. (2021). Ultra-high extinction-ratio light modulation by electrically tunable metasurface using dual epsilon-near-zero resonances. Opto-Electronic Advances. 4(7). 200088–200088. 36 indexed citations
5.
Suwardi, Ady, Su Hui Lim, Yun Zheng, et al.. (2020). Effective enhancement of thermoelectric and mechanical properties of germanium telluride via rhenium-doping. Journal of Materials Chemistry C. 8(47). 16940–16948. 44 indexed citations
6.
Peng, Hua-Gen, W.D. Wang, Kaiyang Zeng, et al.. (2007). Pore Sealing by NH[sub 3] Plasma Treatment of Porous Low Dielectric Constant Films. Journal of The Electrochemical Society. 154(4). G85–G85. 29 indexed citations
7.
Li, Qiang, et al.. (2006). Growth and characterization of UHV sputtering HfO2 film by plasma oxidation and low temperature annealing. Journal of Electroceramics. 16(4). 517–521. 2 indexed citations
8.
Ma, Dong, Dongzhi Chi, M. E. Loomans, et al.. (2006). Kinetics of NiSi-to-NiSi2 transformation and morphological evolution in nickel silicide thin films on Si(001). Acta Materialia. 54(18). 4905–4911. 16 indexed citations
9.
Rahman, Md. Anisur, et al.. (2005). Effects of prolonged annealing on NiSi at low temperature (500°C). Journal of Electronic Materials. 34(8). 1110–1114. 6 indexed citations
10.
Kon, Masato, et al.. (2005). Effects of Si(001) surface amorphization on ErSi2 thin film. Thin Solid Films. 504(1-2). 157–160. 9 indexed citations
11.
Chen, Xian, An Du, Dongzhi Chi, et al.. (2005). Effect of plasma process on low-k material and barrier layer performance. Thin Solid Films. 504(1-2). 248–251. 7 indexed citations
12.
Liew, Siao Li, et al.. (2005). Fully Silicided Ni[sub 1−x]Pt[sub x]Si Metal Gate Electrode for p-MOSFETs. Electrochemical and Solid-State Letters. 8(7). G156–G156. 10 indexed citations
13.
Chen, Zhong, et al.. (2004). Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process. Surface and Coatings Technology. 198(1-3). 291–295. 9 indexed citations
14.
Liu, Jun, Kian Ping Loh, Ming Lin, et al.. (2004). Plasma deposition of low dielectric constant (k=2.2∼2.4) Boron Nitride on methylsilsesquioxane-based nanoporous films. Journal of Applied Physics. 96(11). 6679–6684. 11 indexed citations
15.
Ren, C., H.Y. Yu, Jinfeng Kang, et al.. (2004). Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in<tex>$hbox TaN/SiO_2$</tex>Gate Stack. IEEE Electron Device Letters. 25(3). 123–125. 50 indexed citations
16.
Yu, Xiongfei, Chunxiang Zhu, X.P. Wang, et al.. (2004). High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric. 110–111. 16 indexed citations
17.
Wang, W.D.. (2004). Nickel and nickel oxide nanoparticles prepared from nickel nitrate hexahydrate by a low pressure spray pyrolysis. Materials Science and Engineering B. 2 indexed citations
18.
19.
Yu, H.Y., H.F. Lim, M.F. Li, et al.. (2003). Physical and electrical characteristics of HfN gate electrode for advanced MOS devices. IEEE Electron Device Letters. 24(4). 230–232. 66 indexed citations
20.
Z., D., W.D. Wang, S. J. Chua, & S. Ashok. (2002). Reverse current transport mechanism in shallow junctions containing silicide spikes. Journal of Applied Physics. 92(12). 7532–7535. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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