X.P. Wang

510 total citations
14 papers, 430 citations indexed

About

X.P. Wang is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, X.P. Wang has authored 14 papers receiving a total of 430 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 1 paper in Electronic, Optical and Magnetic Materials and 1 paper in Materials Chemistry. Recurrent topics in X.P. Wang's work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Ferroelectric and Negative Capacitance Devices (11 papers). X.P. Wang is often cited by papers focused on Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Ferroelectric and Negative Capacitance Devices (11 papers). X.P. Wang collaborates with scholars based in Singapore, United States and China. X.P. Wang's co-authors include Dim‐Lee Kwong, Yee‐Chia Yeo, H.Y. Yu, D.S.H. Chan, C. Ren, M.-F. Li, Huan Ma, Jinfeng Kang, Chunxiang Zhu and Albert Chin and has published in prestigious journals such as IEEE Electron Device Letters and National University of Singapore.

In The Last Decade

X.P. Wang

14 papers receiving 413 citations

Peers

X.P. Wang

EEE

MC

AMPO

EOMM

MM

K. Onishi United States

Katsunori Onishi United States

C. Ren China

E.A. Hebert United States

Y.D. Chan United States

Greg Heuss United States

Mats O. Andersson Sweden

Seiji Inumiya Japan

You-Seok Suh United States

J.H. Sim United States

K. Onishi United States

X.P. Wang

374 ×0.9

EEE

70 ×0.8

MC

39 ×0.8

AMPO

42 ×1.5

EOMM

23 ×1.3

MM

Citations per year, relative to X.P. Wang X.P. Wang (= 1×) peers K. Onishi

Countries citing papers authored by X.P. Wang

Since Specialization

Citations

This map shows the geographic impact of X.P. Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X.P. Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X.P. Wang more than expected).

Fields of papers citing papers by X.P. Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X.P. Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X.P. Wang. The network helps show where X.P. Wang may publish in the future.

Co-authorship network of co-authors of X.P. Wang

This figure shows the co-authorship network connecting the top 25 collaborators of X.P. Wang. A scholar is included among the top collaborators of X.P. Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with X.P. Wang. X.P. Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

1.

Wang, X.P., M.-F. Li, H.Y. Yu, et al.. (2008). Widely Tunable Work Function TaN/Ru Stacking Layer on HfLaO Gate Dielectric. IEEE Electron Device Letters. 29(1). 50–53. 9 indexed citations

2.

Wang, X.P., H.Y. Yu, M.-F. Li, et al.. (2007). Wide $V_{\rm fb}$ and $V_{\rm th}$ Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics. IEEE Electron Device Letters. 28(4). 258–260. 50 indexed citations

3.

Wu, Chien‐Hung, Albert Chin, X.P. Wang, et al.. (2007). High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function $\hbox{Ir}_{3}\hbox{Si}$ Gate. IEEE Electron Device Letters. 28(4). 292–294. 11 indexed citations

4.

Li, Mingfu, X.P. Wang, H.Y. Yu, et al.. (2006). A novel high-k gate dielectric HfLaO for next generation CMOS technology. National University of Singapore. 25. 372–375. 3 indexed citations

5.

Kang, Jinfeng, H.Y. Yu, C. Ren, et al.. (2005). Improved electrical and reliability Characteristics of HfN--HfO/sub 2/-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first Process. IEEE Electron Device Letters. 26(4). 237–239. 15 indexed citations

6.

Shen, Chen, M.F. Li, X.P. Wang, et al.. (2005). Negative U traps in HfO/sub 2/ gate dielectrics and frequency dependence of dynamic BTI in MOSFETs. 733–736. 45 indexed citations

7.

Shen, Chen, M.-F. Li, X.P. Wang, Yee‐Chia Yeo, & Dim‐Lee Kwong. (2005). A fast measurement technique of MOSFETI/sub d/-V/sub g/ characteristics. IEEE Electron Device Letters. 27(1). 55–57. 55 indexed citations

8.

Wang, X.P., Mingfu Li, C. Ren, et al.. (2005). Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs. IEEE Electron Device Letters. 27(1). 31–33. 55 indexed citations

9.

Ren, Chao, H.Y. Yu, X.P. Wang, et al.. (2005). Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications. IEEE Electron Device Letters. 26(2). 75–77. 11 indexed citations

10.

Ren, C., H.Y. Yu, Jinfeng Kang, et al.. (2004). A Dual-Metal Gate Integration Process for CMOS With Sub-1-nm EOT<tex>$hbox HfO_2$</tex>by Using HfN Replacement Gate. IEEE Electron Device Letters. 25(8). 580–582. 47 indexed citations

11.

Yu, H.Y., C. Ren, Yee‐Chia Yeo, et al.. (2004). Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions. IEEE Electron Device Letters. 25(5). 337–339. 107 indexed citations

12.

Yu, Xiongfei, Chunxiang Zhu, X.P. Wang, et al.. (2004). High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric. 110–111. 16 indexed citations

13.

Shen, Chen, H.Y. Yu, X.P. Wang, et al.. (2004). Frequency dependent dynamic charge trapping in HfO/sub 2/ and threshold voltage instability in MOSFETs. 601–602. 4 indexed citations

14.

Li, M.F., H.Y. Yu, Yun Hou, et al.. (2004). Selected topics on HfO/sub 2/ gate dielectrics for future ULSI CMOS devices. 366–371 vol.1. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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