S. Mori

557 total citations
32 papers, 309 citations indexed

About

S. Mori is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, S. Mori has authored 32 papers receiving a total of 309 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 3 papers in Biomedical Engineering and 3 papers in Materials Chemistry. Recurrent topics in S. Mori's work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Advanced Memory and Neural Computing (12 papers). S. Mori is often cited by papers focused on Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Advanced Memory and Neural Computing (12 papers). S. Mori collaborates with scholars based in Japan. S. Mori's co-authors include K. Yoshikawa, N. Arai, Yukio Kaneko, Hiroyuki Tsunoda, K. Narita, Masaki Sato, Toshiki Hirano, Ichiro Mizushima, Y. Toyoshima and H. Ishiuchi and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

S. Mori

30 papers receiving 288 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Mori Japan 10 296 52 31 27 26 32 309
C. Caillat Belgium 11 359 1.2× 68 1.3× 22 0.7× 20 0.7× 47 1.8× 33 368
Jeff J. Peterson United States 16 629 2.1× 145 2.8× 39 1.3× 34 1.3× 42 1.6× 35 660
M.M. Jevtić Serbia 10 264 0.9× 91 1.8× 12 0.4× 8 0.3× 55 2.1× 55 305
I. Kim South Korea 6 291 1.0× 112 2.2× 111 3.6× 18 0.7× 15 0.6× 10 329
C. Papadas France 14 480 1.6× 129 2.5× 22 0.7× 25 0.9× 41 1.6× 60 508
J. Yugami Japan 13 452 1.5× 72 1.4× 48 1.5× 28 1.0× 56 2.2× 64 487
Y. Kamigaki Japan 9 355 1.2× 95 1.8× 8 0.3× 19 0.7× 32 1.2× 18 370
J.T. Clemens United States 9 426 1.4× 33 0.6× 8 0.3× 15 0.6× 55 2.1× 31 454
A. Strong United States 9 254 0.9× 23 0.4× 28 0.9× 65 2.4× 13 0.5× 19 279
Yohei Otani Japan 11 235 0.8× 204 3.9× 9 0.3× 39 1.4× 61 2.3× 38 315

Countries citing papers authored by S. Mori

Since Specialization
Citations

This map shows the geographic impact of S. Mori's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Mori with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Mori more than expected).

Fields of papers citing papers by S. Mori

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Mori. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Mori. The network helps show where S. Mori may publish in the future.

Co-authorship network of co-authors of S. Mori

This figure shows the co-authorship network connecting the top 25 collaborators of S. Mori. A scholar is included among the top collaborators of S. Mori based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Mori. S. Mori is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsuchida, Ryutaro, S. Mori, Tsutomu Sato, Naotaka Uchitomi, & Ichiro Mizushima. (2008). Influence of in-situ Boron Doping on the Surface Roughening of SiGe:B Films. ECS Transactions. 16(10). 267–272. 1 indexed citations
2.
Ohuchi, K., et al.. (2007). A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32nm node and beyond. Solid-State Electronics. 51(11-12). 1437–1443. 11 indexed citations
3.
4.
Mori, S., Hiroshi Itokawa, Ichiro Mizushima, et al.. (2007). Record-high performance 32 nm node pMOSFET with advanced Two-step recessed SiGe-S/D and stress liner technology. 48–49. 8 indexed citations
5.
6.
Yoshikawa, K., S. Mori, K. Narita, et al.. (2003). An asymmetrical lightly-doped source (ALDS) cell for virtual ground high density EPROMs. 432–435. 1 indexed citations
7.
8.
Mori, S., et al.. (2002). Reliability study of thin inter-poly dielectrics for non-volatile memory application. 132–144. 9 indexed citations
9.
10.
Watanabe, Hidehiro, S. Yamada, M. Tanimoto, et al.. (2002). Novel 0.44 μm/sup 2/ Ti-salicide STI cell technology for high-density NOR flash memories and high performance embedded application. 975–978. 2 indexed citations
11.
Yamada, K., T. Nishimura, K. Isobe, et al.. (2002). New interconnect plasma induced damage analyzed by flash memory cell array. 185–188. 8 indexed citations
12.
Ruchimat, Toni, Toshiro Masumoto, S. Mori, Hidetsuyo Hosokawa, & Sadao Shimeno. (1997). Effect of ration level on non-fecal nitrogen excretion of juvenile yellowtail (Seriola quinqueradiata). Kochi University Digital Repository for Academic Resources (Kochi University). 17. 63–68. 2 indexed citations
13.
Arai, N., Hiroyuki Tsunoda, Yoshio Yamaguchi, et al.. (1994). The impact of intermetal dielectric layer and high temperature bake test on the reliability of nonvolatile memory devices. 57. 359–367. 8 indexed citations
14.
Mori, S., et al.. (1992). Bottom-oxide scaling for thin nitride/oxide interpoly dielectric in stacked-gate nonvolatile memory cells. IEEE Transactions on Electron Devices. 39(2). 283–291. 11 indexed citations
15.
Mori, S., N. Arai, Yukio Kaneko, & K. Yoshikawa. (1991). Polyoxide thinning limitation and superior ONO interpoly dielectric for nonvolatile memory devices. IEEE Transactions on Electron Devices. 38(2). 270–277. 26 indexed citations
16.
Yoshikawa, K., S. Mori, & N. Arai. (1990). An EPROM cell structure for EPLDs compatible with single poly-Si gate process. IEEE Transactions on Electron Devices. 37(3). 675–679. 3 indexed citations
17.
Imamiya, K., J. Miyamoto, S. Atsumi, et al.. (1990). A 68-ns 4-Mbit CMOS EPROM with high-noise-immunity design. IEEE Journal of Solid-State Circuits. 25(1). 72–78. 4 indexed citations
18.
Mori, S., et al.. (1986). Reliability Aspects of 100A Inter-Poly Dielectrics for High Density VLSI's. Symposium on VLSI Technology. 71–72. 5 indexed citations
19.
Mori, S., et al.. (1985). Low Leakage Current Polysilicon Oxide Grown by Two-Step Oxidation. Reliability physics. 32–38. 9 indexed citations
20.
Mori, S., et al.. (1985). Reduction in Polysilicon Oxide Leakage Current by Annealing prior to Oxidation. Journal of The Electrochemical Society. 132(9). 2185–2188. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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