J. A. Freitas

1.1k total citations
25 papers, 909 citations indexed

About

J. A. Freitas is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. A. Freitas has authored 25 papers receiving a total of 909 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 15 papers in Materials Chemistry and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. A. Freitas's work include GaN-based semiconductor devices and materials (20 papers), Ga2O3 and related materials (11 papers) and ZnO doping and properties (11 papers). J. A. Freitas is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Ga2O3 and related materials (11 papers) and ZnO doping and properties (11 papers). J. A. Freitas collaborates with scholars based in United States, Germany and South Korea. J. A. Freitas's co-authors include D. T. Olson, J. N. Kuznia, M. Asif Khan, E. R. Glaser, W. E. Carlos, K. Doverspike, D. Kurt Gaskill, T. A. Kennedy, D. K. Wickenden and L.B. Rowland and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. A. Freitas

25 papers receiving 891 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. A. Freitas United States 13 795 449 437 362 267 25 909
D. Volm Germany 13 514 0.6× 288 0.6× 338 0.8× 404 1.1× 355 1.3× 28 812
K. Fujito Japan 15 758 1.0× 398 0.9× 437 1.0× 309 0.9× 287 1.1× 28 920
Hiroaki Hayashi Japan 8 537 0.7× 268 0.6× 229 0.5× 192 0.5× 145 0.5× 18 608
M. Kunze Germany 13 572 0.7× 226 0.5× 303 0.7× 404 1.1× 197 0.7× 23 780
M. Wróblewski Poland 14 603 0.8× 232 0.5× 325 0.7× 226 0.6× 258 1.0× 26 694
Karine Hestroffer United States 19 716 0.9× 366 0.8× 443 1.0× 447 1.2× 313 1.2× 40 1.0k
G. Kamler Poland 17 781 1.0× 368 0.8× 418 1.0× 350 1.0× 264 1.0× 59 902
D. F. Lee United States 12 887 1.1× 376 0.8× 407 0.9× 141 0.4× 212 0.8× 14 988
D. Selvanathan United States 13 418 0.5× 126 0.3× 258 0.6× 388 1.1× 200 0.7× 15 698
Karl Engl Germany 10 378 0.5× 154 0.3× 200 0.5× 262 0.7× 241 0.9× 20 659

Countries citing papers authored by J. A. Freitas

Since Specialization
Citations

This map shows the geographic impact of J. A. Freitas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. A. Freitas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. A. Freitas more than expected).

Fields of papers citing papers by J. A. Freitas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. A. Freitas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. A. Freitas. The network helps show where J. A. Freitas may publish in the future.

Co-authorship network of co-authors of J. A. Freitas

This figure shows the co-authorship network connecting the top 25 collaborators of J. A. Freitas. A scholar is included among the top collaborators of J. A. Freitas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. A. Freitas. J. A. Freitas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Meißner, Elke, Alaleh Tajalli, Matteo Meneghini, et al.. (2020). Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics. 127(1). 23 indexed citations
2.
Feigelson, Boris N., R. M. Frazier, J. A. Freitas, et al.. (2008). Seeded growth of GaN single crystals from solution at near atmospheric pressure. Journal of Crystal Growth. 310(17). 3934–3940. 17 indexed citations
3.
Fechine, Pierre Basílio Almeida, A. S. B. Sombra, & J. A. Freitas. (2008). Dielectric studies of metal/n-GaN/metal Schottky contact in the radio frequency range. Journal of Crystal Growth. 310(17). 3992–3997. 2 indexed citations
4.
Kim, Jihyun, J. A. Freitas, J. Mittereder, et al.. (2006). Micro-Raman Studies of Thermal Stress Effects in GaN Heteroepitaxial Layers and Self-heating Effects in AlGaN/GaN HEMT Structures. ECS Meeting Abstracts. MA2005-02(18). 709–709. 1 indexed citations
5.
Freitas, J. A., W. J. Moore, B. V. Shanabrook, et al.. (2002). Donor-related recombination processes in hydride-vapor-phase epitaxial GaN. Physical review. B, Condensed matter. 66(23). 79 indexed citations
6.
Butcher, Kenneth, M. Godlewski, A. Szczerbakow, et al.. (2002). Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers. Journal of Crystal Growth. 246(3-4). 237–243. 18 indexed citations
7.
Glaser, E. R., J. A. Freitas, G. C. B. Braga, et al.. (2001). Magnetic resonance studies of defects in GaN with reduced dislocation densities. Physica B Condensed Matter. 308-310. 51–57. 7 indexed citations
8.
Shin, M., A. Y. Polyakov, Marek Skowroński, et al.. (1996). Factors Influencing the Electrical and Optical Properties of Aigan Layers on Sapphire. MRS Proceedings. 423. 3 indexed citations
9.
Polyakov, A. Y., M. Shin, S. J. Pearton, et al.. (1996). The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of Aigan Samples Grown on Sapphire. MRS Proceedings. 423. 6 indexed citations
10.
Glaser, E. R., T. A. Kennedy, A. E. Wickenden, D. D. Koleske, & J. A. Freitas. (1996). Magnetic Resonance Studies of High-Resistivity GaN Films Grown on Al2O3. MRS Proceedings. 449. 3 indexed citations
11.
Glaser, E. R., T. A. Kennedy, Steven W. Brown, et al.. (1995). Detection of Magnetic Resonance on Shallow Donor - Shallow Acceptor and Deep (2.2 eV) Recombination from GaN Films Grown on 6H-SiC. MRS Proceedings. 395. 6 indexed citations
12.
Doverspike, K., A. E. Wickenden, S.C. Binari, D. Kurt Gaskill, & J. A. Freitas. (1995). Growth of Silicon-Doped and High Quality, Highly Resistive GaN for FET Applications. MRS Proceedings. 395. 21 indexed citations
13.
Glaser, E. R., T. A. Kennedy, K. Doverspike, et al.. (1995). Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition. Physical review. B, Condensed matter. 51(19). 13326–13336. 272 indexed citations
14.
Edwards, N. V., M. D. Bremser, T. W. Weeks, et al.. (1995). Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena. MRS Proceedings. 395. 5 indexed citations
15.
Zvanut, M. E., et al.. (1994). Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy. Applied Physics Letters. 65(18). 2287–2289. 36 indexed citations
16.
Khan, M. Asif, D. T. Olson, J. N. Kuznia, W. E. Carlos, & J. A. Freitas. (1993). The nature of donor conduction in n-GaN. Journal of Applied Physics. 74(9). 5901–5903. 21 indexed citations
17.
Glaser, E. R., T. A. Kennedy, J. A. Freitas, et al.. (1993). Observation of optically detected magnetic resonance in GaN films. Applied Physics Letters. 63(19). 2673–2675. 36 indexed citations
18.
Carlos, W. E., J. A. Freitas, M. Asif Khan, D. T. Olson, & J. N. Kuznia. (1993). Electron-spin-resonance studies of donors in wurtzite GaN. Physical review. B, Condensed matter. 48(24). 17878–17884. 113 indexed citations
19.
Sillmon, R. S. & J. A. Freitas. (1990). On-demand atmospheric pressure storage system for AsH3 and PH3. Applied Physics Letters. 56(2). 174–176. 4 indexed citations
20.
Snow, Eric, J. A. Freitas, & U. Strom. (1988). Time-resolved photoluminescence ofFe3+ions in fluorozirconate glass. Physical review. B, Condensed matter. 37(17). 10332–10338. 4 indexed citations

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