O. H. Nam

510 total citations
15 papers, 425 citations indexed

About

O. H. Nam is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, O. H. Nam has authored 15 papers receiving a total of 425 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Condensed Matter Physics, 9 papers in Electrical and Electronic Engineering and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in O. H. Nam's work include GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (6 papers) and Semiconductor materials and devices (5 papers). O. H. Nam is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (6 papers) and Semiconductor materials and devices (5 papers). O. H. Nam collaborates with scholars based in South Korea, United States and Sweden. O. H. Nam's co-authors include R. F. Davis, Brandon Ward, R. J. Nemanich, M. D. Bremser, Jae-Min Myoung, Byeong‐Yun Oh, Min‐Chang Jeong, Taek Kim, H. S. Paek and T. Sakong and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nanotechnology.

In The Last Decade

O. H. Nam

14 papers receiving 411 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
O. H. Nam South Korea	10	337	203	170	142	111	15	425
J. S. Tsang Taiwan	12	245 0.7×	276 1.4×	140 0.8×	268 1.9×	122 1.1×	34	473
B. Schineller Germany	14	497 1.5×	307 1.5×	252 1.5×	279 2.0×	233 2.1×	72	640
H.H. Yao Taiwan	9	226 0.7×	197 1.0×	125 0.7×	185 1.3×	100 0.9×	16	375
R. C. Tu Taiwan	11	312 0.9×	168 0.8×	222 1.3×	179 1.3×	142 1.3×	30	424
S. M. Donovan United States	13	453 1.3×	367 1.8×	158 0.9×	100 0.7×	174 1.6×	38	551
J.C. de Jaeger France	13	437 1.3×	424 2.1×	176 1.0×	143 1.0×	203 1.8×	39	630
I. Berishev United States	10	281 0.8×	238 1.2×	161 0.9×	122 0.9×	137 1.2×	36	448
R. Beccard Germany	11	243 0.7×	209 1.0×	150 0.9×	169 1.2×	128 1.2×	41	394
Ho Ki Kwon South Korea	15	407 1.2×	314 1.5×	202 1.2×	205 1.4×	189 1.7×	33	579
K. S. Stevens United States	12	385 1.1×	347 1.7×	220 1.3×	149 1.0×	154 1.4×	32	603

Countries citing papers authored by O. H. Nam

Since Specialization

Citations

This map shows the geographic impact of O. H. Nam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. H. Nam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. H. Nam more than expected).

Fields of papers citing papers by O. H. Nam

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. H. Nam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. H. Nam. The network helps show where O. H. Nam may publish in the future.

Co-authorship network of co-authors of O. H. Nam

This figure shows the co-authorship network connecting the top 25 collaborators of O. H. Nam. A scholar is included among the top collaborators of O. H. Nam based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. H. Nam. O. H. Nam is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Nam, Yujin, et al.. (2025). Depletion-mode and enhancement-mode diamond MOSFETs fabricated on the same heteroepitaxial diamond substrates. Diamond and Related Materials. 153. 112022–112022.

Lee, Sung‐Nam, Han‐Youl Ryu, H. S. Paek, et al.. (2008). Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes. IEEE Electron Device Letters. 29(8). 870–872. 13 indexed citations

Sakong, T., et al.. (2005). Enhanced optical properties of InGaN MQWs with InGaN underlying layers. Journal of Crystal Growth. 287(2). 558–561. 24 indexed citations

Jeong, Min‐Chang, Byeong‐Yun Oh, O. H. Nam, Taek Kim, & Jae-Min Myoung. (2005). Three-dimensional ZnO hybrid nanostructures for oxygen sensing application. Nanotechnology. 17(2). 526–530. 43 indexed citations

Nam, O. H., K. H. Ha, Joon Seop Kwak, et al.. (2004). Characteristics of GaN-based laser diodes for post-DVD applications. physica status solidi (a). 201(12). 2717–2720. 74 indexed citations

Zetterling, Carl‐Mikael, Mikael Östling, K. J. Linthicum, et al.. (2002). The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions. Solid-State Electronics. 46(6). 827–835. 18 indexed citations

Davis, R. F., O. H. Nam, Tsvetanka Zheleva, et al.. (2000). Lateral- and Pendeo-Epitaxial Growth and Defect Reduction in GaN Thin Films. Materials science forum. 338-342. 1471–1476. 4 indexed citations

Zetterling, Carl‐Mikael, Mikael Östling, Sang Kwon Lee, et al.. (2000). Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process. Materials science forum. 338-342. 1049–1052. 5 indexed citations

Cho, Jaehee, et al.. (2000). InGaN/GaN multi-quantum well distributed Bragg reflector laser diode. Applied Physics Letters. 76(12). 1489–1491. 14 indexed citations

10.

Zetterling, Carl‐Mikael, Mikael Östling, K. J. Linthicum, et al.. (1999). Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes. Materials Science and Engineering B. 61-62. 320–324. 7 indexed citations

11.

Ward, Brandon, O. H. Nam, R. Schlesser, et al.. (1998). Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. Journal of Applied Physics. 84(9). 5238–5242. 64 indexed citations

12.

Edwards, N. V., Seunghyun Yoo, M. D. Bremser, et al.. (1997). Variation of GaN valence bands with biaxial stress and quantification of residual stress. Applied Physics Letters. 70(15). 2001–2003. 38 indexed citations

13.

Nam, O. H., M. D. Bremser, Brandon Ward, R. J. Nemanich, & R. F. Davis. (1997). Growth of GaN and Al_0.2Ga_0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy. Japanese Journal of Applied Physics. 36(5A). L532–L532. 108 indexed citations

14.

Nam, O. H., M. D. Bremser, Brandon Ward, R. J. Nemanich, & R. F. Davis. (1996). Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy. MRS Proceedings. 449. 11 indexed citations

15.

Byun, Dongjin, Gyeungho Kim, O. H. Nam, et al.. (1996). Atomic Force Microscopy Study of GaN-Buffer Layers on SiC(0001) By MOCVD. MRS Proceedings. 423. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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