T. D. Haeffner

450 total citations
23 papers, 335 citations indexed

About

T. D. Haeffner is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Infectious Diseases. According to data from OpenAlex, T. D. Haeffner has authored 23 papers receiving a total of 335 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 10 papers in Hardware and Architecture and 0 papers in Infectious Diseases. Recurrent topics in T. D. Haeffner's work include Radiation Effects in Electronics (18 papers), Semiconductor materials and devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). T. D. Haeffner is often cited by papers focused on Radiation Effects in Electronics (18 papers), Semiconductor materials and devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). T. D. Haeffner collaborates with scholars based in United States and Italy. T. D. Haeffner's co-authors include J. S. Kauppila, L. W. Massengill, Dennis R. Ball, En Xia Zhang, B. L. Bhuva, Michael L. Alles, T. D. Loveless, W.T. Holman, Daniel M. Fleetwood and S. Jagannathan and has published in prestigious journals such as IEEE Transactions on Nuclear Science.

In The Last Decade

T. D. Haeffner

21 papers receiving 323 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. D. Haeffner United States 12 329 123 6 4 4 23 335
Rita Fung United States 10 305 0.9× 122 1.0× 11 1.8× 6 1.5× 2 0.5× 44 316
Maximilien Glorieux France 10 251 0.8× 112 0.9× 11 1.8× 8 2.0× 1 0.3× 20 254
T. Assis United States 9 249 0.8× 135 1.1× 4 0.7× 9 2.3× 1 0.3× 18 250
R.K. Treece United States 9 252 0.8× 163 1.3× 4 0.7× 5 1.3× 16 259
A. Pavlov Canada 8 300 0.9× 129 1.0× 7 1.2× 1 0.3× 13 319
G. Braceras United States 8 375 1.1× 84 0.7× 6 1.0× 3 0.8× 14 382
E. Grossar Belgium 4 405 1.2× 115 0.9× 13 2.2× 2 0.5× 8 409
S. Joshi United States 9 219 0.7× 49 0.4× 18 3.0× 4 1.0× 23 238
Bingxu Ning China 10 301 0.9× 29 0.2× 2 0.3× 6 1.5× 2 0.5× 42 304
M. Agostinelli United States 10 400 1.2× 105 0.9× 15 2.5× 15 408

Countries citing papers authored by T. D. Haeffner

Since Specialization
Citations

This map shows the geographic impact of T. D. Haeffner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. D. Haeffner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. D. Haeffner more than expected).

Fields of papers citing papers by T. D. Haeffner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. D. Haeffner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. D. Haeffner. The network helps show where T. D. Haeffner may publish in the future.

Co-authorship network of co-authors of T. D. Haeffner

This figure shows the co-authorship network connecting the top 25 collaborators of T. D. Haeffner. A scholar is included among the top collaborators of T. D. Haeffner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. D. Haeffner. T. D. Haeffner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Haeffner, T. D., J. S. Kauppila, Michael L. Alles, et al.. (2025). Back-Biasing Strategy to Mitigate TID-Induced Threshold Voltage Shift in 22nm FDSOI Transistors. IEEE Transactions on Nuclear Science. 1–1.
2.
Dodds, Nathaniel A., B. Dodd, Hugh Barnaby, et al.. (2025). The Effect of Number of Fins per Transistor on the TID Response of 12LP FinFET Technology. IEEE Transactions on Nuclear Science. 72(8). 2317–2323.
3.
Haeffner, T. D., Dennis R. Ball, Andrew L. Sternberg, et al.. (2023). Analysis of Single-Event Upsets and Transients in 22 nm Fully Depleted Silicon-On-Insulator Logic. IEEE Transactions on Nuclear Science. 70(4). 387–393. 1 indexed citations
4.
Kauppila, J. S., T. D. Haeffner, Dennis R. Ball, et al.. (2022). Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors. IEEE Transactions on Nuclear Science. 69(3). 374–380. 5 indexed citations
5.
Zhang, En Xia, Dennis R. Ball, T. D. Haeffner, et al.. (2021). In Situ Measurement of TID-Induced Leakage Using On-Chip Frequency Modulation. IEEE Transactions on Nuclear Science. 69(3). 367–373. 3 indexed citations
6.
Loveless, T. D., et al.. (2020). Radiation Hardened by Design Subsampling Phase-Locked Loop Techniques in PD-SOI. IEEE Transactions on Nuclear Science. 67(6). 1144–1151. 5 indexed citations
7.
Kauppila, J. S., T. D. Haeffner, Andrew L. Sternberg, et al.. (2019). Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage. IEEE Transactions on Nuclear Science. 66(7). 1427–1432. 10 indexed citations
8.
Kauppila, J. S., T. D. Haeffner, En Xia Zhang, et al.. (2019). Exploiting SEU Data Analysis to Extract Fast SET Pulses. IEEE Transactions on Nuclear Science. 66(6). 932–937. 1 indexed citations
9.
Kauppila, J. S., Dennis R. Ball, T. D. Haeffner, et al.. (2019). A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies. IEEE Transactions on Nuclear Science. 66(3). 635–642. 9 indexed citations
10.
Haeffner, T. D., Robert A. Reed, Ronald D. Schrimpf, et al.. (2019). Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K. IEEE Transactions on Nuclear Science. 66(6). 911–917. 23 indexed citations
11.
Kauppila, J. S., Dennis R. Ball, T. D. Haeffner, et al.. (2018). Effect of Transistor Variants on Single-Event Transients at the 14-/16-nm Bulk FinFET Technology Generation. IEEE Transactions on Nuclear Science. 65(8). 1807–1813. 17 indexed citations
12.
Kauppila, J. S., Dennis R. Ball, T. D. Haeffner, et al.. (2017). Dual-Interlocked Logic for Single-Event Transient Mitigation. IEEE Transactions on Nuclear Science. 65(8). 1872–1878. 11 indexed citations
13.
Ball, Dennis R., Michael L. Alles, J. S. Kauppila, et al.. (2017). The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops. IEEE Transactions on Nuclear Science. 65(1). 326–330. 21 indexed citations
14.
Kauppila, J. S., Dennis R. Ball, T. D. Haeffner, et al.. (2017). Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques. IEEE Transactions on Nuclear Science. 65(1). 362–368. 13 indexed citations
15.
Kauppila, J. S., T. D. Haeffner, Dennis R. Ball, et al.. (2017). Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale Circuits. IEEE Transactions on Nuclear Science. 65(1). 486–494. 14 indexed citations
16.
Kauppila, J. S., Kevin M. Warren, T. D. Haeffner, et al.. (2017). Estimating Single-Event Logic Cross Sections in Advanced Technologies. IEEE Transactions on Nuclear Science. 1–1. 28 indexed citations
17.
King, M., Xiaogang Wu, M. Eller, et al.. (2016). Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance. IEEE Transactions on Nuclear Science. 64(1). 285–292. 60 indexed citations
18.
Kauppila, J. S., T. D. Haeffner, T. Assis, et al.. (2015). Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology. IEEE Transactions on Nuclear Science. 62(6). 2613–2619. 17 indexed citations
19.
Jagannathan, S., T. D. Loveless, En Xia Zhang, et al.. (2013). Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation. IEEE Transactions on Nuclear Science. 60(6). 4498–4504. 19 indexed citations
20.
Loveless, T. D., J. S. Kauppila, S. Jagannathan, et al.. (2012). On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology. IEEE Transactions on Nuclear Science. 59(6). 2748–2755. 38 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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