L. Eckey

2.0k citations

41 papers · 1.6k indexed · h-index 18

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 34
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 14
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 23
Materials Chemistry top 5%
- ZnO doping and properties 10
- Quantum Dots Synthesis And Properties 4
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 9
- Advanced Semiconductor Detectors and Materials 4
Biomedical Engineering
- Nanowire Synthesis and Applications 4

Co-authors: A. Hoffmann R. Heitz I. Broser Bertrand Meyer H. Siegle B. K. Meyer Hiroshi Amano C. Thomsen
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (8 papers)Physical review. B, Condensed matter (5 papers)Journal of Crystal Growth (4 papers)
Partner nations: Germany Japan Russia

In The Last Decade

L. Eckey

41 papers receiving 1.6k citations

Peers

Countries citing papers authored by L. Eckey

Since Specialization

Citations

This map shows the geographic impact of L. Eckey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Eckey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Eckey more than expected).

Fields of papers citing papers by L. Eckey

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Eckey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Eckey. The network helps show where L. Eckey may publish in the future.

Co-authorship network

The 25 scholars most cited alongside L. Eckey, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Eckey Line = papers co-authored together L. Eckey links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Exciton Energy Structure in Wurtzite GaN physica status solidi (b) ·A. V. Rodina,M. Dietrich,Camila Laís da Silva Costa,L. Eckey,Al. L. Éfros,Matthew S. Rosen,A. Hoffmann,Bertrand Meyer	1999	7
2	Mechanisms of optical gain in cubic gallium nitrite Applied Physics Letters ·J. Holst,L. Eckey,A. Hoffmann,I. Broser,B. Schöttker,D. J. As,D. Schikora,K. Lischka	1998	39
3	Excitonic Fine Structure and High Density Effects in GaN Materials science forum ·A. Hoffmann,L. Eckey	1998	7
4	Local strain distribution of hexagonal GaN pyramids Journal of Crystal Growth ·A. Hoffmann,H. Siegle,A. Kaschner,L. Eckey,C. Thomsen,J. Christen,F. Bertram,Michael Schmidt,K. Hiramatsu,Shota Kitamura,Nobuhiko Sawaki	1998	17
5	Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers Journal of Applied Physics ·L. Eckey,Chen Jingsheng,J. Holst,A. Hoffmann,A. Kaschner,H. Siegle,C. Thomsen,B. Schineller,K. Heime,M. Heuken,Oliver Schön,R. Beccard	1998	85
6	Compensation effects in Mg-doped GaN epilayers Journal of Crystal Growth ·L. Eckey,Chen Jingsheng,J. Holst,A. Hoffmann,B. Schineller,K. Heime,M. Heuken,Oliver Schön,R. Beccard	1998	32
7	Excitonic Quantum Efficiency of GaN Materials science forum ·Camila Laís da Silva Costa,L. Eckey,A. Hoffmann,Danh-Hùng Nguyễn,O. Briot	1998	1
8	Dynamical study of the yellow luminescence band in GaN Solid-State Electronics ·A. Hoffmann,L. Eckey,Peter E. Maxim,J. Holst,R. Heitz,D.M. Hofmann,D. Kovalev,Amélia Augusta Friche de Lima,D. Volm,B. K. Meyer,Theeradetch Detchprohm,Kunihide Hiramatsu,Hiroshi Amano,Isamu Akasaki	1997	31
9	Photoluminescence and optical gain in highly excited GaN Journal of Luminescence ·L. Eckey,J. Holst,Abdulwahab Al-Yahya,I. Broser,Hiroshi Amano,Isamu Akasaki,Theeradetch Detchprohm,Kunihide Hiramatsu	1997	7
10	Comment on “Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions” [Appl. Phys. Lett. 69, 1276 (1996)] Applied Physics Letters ·H. Siegle,I. Loa,P. Thurian,L. Eckey,A. Hoffmann,I. Broser,C. Thomsen	1997	9
11	Radiative And Nonradiative Relaxation Of Excitons In GaN MRS Proceedings ·Camila Laís da Silva Costa,L. Eckey,A. Hoffmann,I. Broser,Chiara Guidotto,Danh-Hùng Nguyễn,Rafael Rossi de Sousa,R.L. Aulombard,O. Briot	1997	3
12	Exciton fine structure in undoped GaN epitaxial films Physical review. B, Condensed matter ·D. Volm,Nurnaili Choirunnisa,塚本薫,D. Kovalev,M. Ben‐Chorin,J. Diener,B. K. Meyer,Jacek A. Majewski,L. Eckey,A. Hoffmann,Hiroshi Amano,Isamu Akasaki,K. Hiramatsu,Theeradetch Detchprohm	1996	128
13	Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface Applied Physics Letters ·H. Siegle,P. Thurian,L. Eckey,A. Hoffmann,C. Thomsen,Bernhard Meyer,Hiroshi Amano,Isamu Akasaki,Theeradetch Detchprohm,K. Hiramatsu	1996	43
14	Depth Profile of the Excitonic Luminescence in Gallium-Nitride Layers MRS Proceedings ·H. Siegle,Amin Sabori,L. Eckey,C. Thomsen,Theeradetch Detchprohm,K. Hiramatsu,Timothy J. Davis,J. W. Steeds	1996	8
15	Dynamics of bound-exciton luminescences from epitaxial GaN Applied Physics Letters ·L. Eckey,Hesekiel Bernando Nainggolan,Peter E. Maxim,R. Heitz,Axel Hoffmann,I. Broser,Bernhard Meyer,Christian Wetzel,E. N. Mokhov,P. G. Baranov	1996	69
16	Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition Applied Physics Letters ·J. Böhrer,A. Krost,R. Heitz,F. Heinrichsdorff,L. Eckey,D. Bimberg,H. Cerva	1996	26
17	Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots Applied Physics Letters ·R. Heitz,Marius Grundmann,N. N. Ledentsov,L. Eckey,M. J. Veit,D. Bimberg,V. M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Zh. I. Alfërov	1996	188
18	InAs/GaAs quantum dots radiative recombination from zero‐dimensional states physica status solidi (b) ·Marius Grundmann,N. N. Ledentsov,R. Heitz,L. Eckey,J. Christen,J. Böhrer,D. Bimberg,S. Ruvimov,P. Werner,Uwe Richter,J. Heydenreich,V. M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Zh. I. Alfërov	1995	108
19	Degenerate-Four-Wave-Mixing at the Nitrogen Acceptor Bound Exiton in ZnSe Epilayers Materials science forum ·A. Hoffmann,R M Silva,Svetlana Kvesko,L. Eckey,R. Heitz,I. Broser,E. Kurtz,M. Tomczak,B. Jobst,D. Hommel,G. Landwehr	1995	1
20	Site-selective study of picosecond relaxation processes of Ni2+ in polymorphic ZnS Physica B Condensed Matter ·R. Heitz,L. Eckey,A. Hoffmann,I. Broser	1993	2

About L. Eckey

L. Eckey is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering, having authored 41 papers that have together received 1.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Semiconductor Quantum Structures and Devices (23 papers), Ga2O3 and related materials (14 papers), ZnO doping and properties (10 papers), Semiconductor materials and devices (9 papers), Quantum Dots Synthesis And Properties (4 papers), Nanowire Synthesis and Applications (4 papers) and Advanced Semiconductor Detectors and Materials (4 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electronic, Optical and Magnetic Materials (621 citations), Atomic and Molecular Physics, and Optics (835 citations), Materials Chemistry (813 citations) and Electrical and Electronic Engineering (688 citations). L. Eckey has collaborated with scholars based in Germany, Japan and Russia. Frequent co-authors include A. Hoffmann, R. Heitz, I. Broser, Bertrand Meyer, H. Siegle, B. K. Meyer, Hiroshi Amano, C. Thomsen, Isamu Akasaki and D. Kovalev. Their work appears in journals such as Applied Physics Letters, Physical review. B, Condensed matter, Journal of Crystal Growth, MRS Internet Journal of Nitride Semiconductor Research and physica status solidi (b).

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