A. Kaschner

1.7k citations

40 papers · 1.5k indexed · h-index 18

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 37
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 14
Materials Chemistry top 5%
- ZnO doping and properties 13
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 16
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 7
Mechanics of Materials
- Metal and Thin Film Mechanics 13
Biomedical Engineering
- Acoustic Wave Resonator Technologies 5
- Nanowire Synthesis and Applications 5

Co-authors: A. Hoffmann C. Thomsen G. Kaczmarczyk M. Straßburg Bertrand Meyer A. Zeuner D.M. Hofmann U. Haboeck
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Applied Physics Letters (14 papers)Physical review. B, Condensed matter (3 papers)physica status solidi (b) (3 papers)
Partner nations: Germany Japan Russia

In The Last Decade

A. Kaschner

40 papers receiving 1.4k citations

Peers

Countries citing papers authored by A. Kaschner

Since Specialization

Citations

This map shows the geographic impact of A. Kaschner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Kaschner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Kaschner more than expected).

Fields of papers citing papers by A. Kaschner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Kaschner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Kaschner. The network helps show where A. Kaschner may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Kaschner, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Kaschner Line = papers co-authored together A. Kaschner links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Origin and length scale of carrier localisation in GaInAsN analysed by transmission electron microscopy M. Albrecht,T. Remmele,Vincenzo Grillo,H. P. Strunk,A. Kaschner,A. Hoffmann,A. Yu. Egorov,H. Riechert	2004	1
2	Stress analysis of AlxGa1−xN films with microcracks Applied Physics Letters ·Thierry Epicier,T. Riemann,J. Christen,Riaid Hadi Salih,A. Kaschner,A. Hoffmann,C. Thomsen,Konrad Vogeler,Peizhen Zhang,S. Einfeldt,D. Hommel	2003	21
3	Localization effects in InGaAsN multi-quantum well structures Materials Science and Engineering B ·A. Hoffmann,R. Heitz,A. Kaschner,A Jorge,H. Born,A. Yu. Egorov,H. Riechert	2002	8
4	Effect of annealing on the In and N distribution in InGaAsN quantum wells Applied Physics Letters ·M. Albrecht,Vincenzo Grillo,T. Remmele,H. P. Strunk,A. Yu. Egorov,Tatik Aryati,H. Riechert,A. Kaschner,R. Heitz,A. Hoffmann	2002	76
5	Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates Applied Physics Letters ·T. Riemann,J. Christen,A. Kaschner,A. Laades,A. Hoffmann,C. Thomsen,Motoaki Iwaya,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki	2002	12
6	Three-Dimensional Imaging of ELOG Growth Domains by Scanning Cathodoluminescence Tomography physica status solidi (a) ·T. Riemann,J. Christen,A. Kaschner,A. Hoffmann,C. Thomsen,Thomas P. Fuller,Frank Habel,R. Beccard,M. Heuken	2001	4
7	Raman Scattering in Resonance with Acceptor-Bound Excitons in GaN physica status solidi (b) ·A. Kaschner,A. Hoffmann,C. Thomsen	2001	3
8	Temperature and pressure dependence of Mg local modes in GaN Applied Physics Letters ·G. Kaczmarczyk,A. Kaschner,A. Hoffmann,C. Thomsen	2001	3
9	Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN Physical review. B, Condensed matter ·G. Kaczmarczyk,A. Kaschner,A. Hoffmann,C. Thomsen	2000	51
10	Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations Applied Physics Letters ·G. Kaczmarczyk,A. Kaschner,Stephanie Reich,A. Hoffmann,C. Thomsen,D. J. As,Alisson Padilha de Lima,D. Schikora,K. Lischka,R. Averbeck,H. Riechert	2000	78
11	Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN Journal of Luminescence ·A. Kaschner,J. Holst,A. Hoffmann,I. Broser,Peter Fischer,F. Bertram,T. Riemann,J. Christen,K. Hiramatsu,T. Shibata,Nobuhiko Sawaki	2000	3
12	Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN Applied Physics Letters ·A. Kaschner,A. Hoffmann,C. Thomsen,F. Bertram,T. Riemann,J. Christen,K. Hiramatsu,T. Shibata,Nobuhiko Sawaki	1999	50
13	Stress analysis of selective epitaxial growth of GaN Applied Physics Letters ·Mot Galaton,A. Hoffmann,H. Siegle,A. Kaschner,C. Thomsen,J. Christen,F. Bertram	1999	40
14	Strain Modification of GaN in AlGaN/GaN Epitaxial Films Japanese Journal of Applied Physics ·G. Steude,Bruno Meyer,Camila Laís da Silva Costa,A. Hoffmann,A. Kaschner,F. Bechstedt,Hiroshi Amano,Isamu Akasaki	1999	29
15	Impact of the ZnO buffer on the optical properties of GaN: time resolved micro-photoluminescence Materials Science and Engineering B ·A. Hoffmann,J. Holst,A. Kaschner,H. Siegle,J. Christen,Peter Fischer,F. Bertram,K. Hiramatsu	1999	4
16	Influence of Doping on the Lattice Dynamics of Gallium Nitride MRS Internet Journal of Nitride Semiconductor Research ·A. Kaschner,H. Siegle,A. Hoffmann,C. Thomsen,俊彦尾関,S. Einfeldt,D. Hommel	1999	4
17	Epitaxial lateral overgrowth of GaN structures: spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy Materials Science and Engineering B ·F. Bertram,T. Riemann,J. Christen,A. Kaschner,A. Hoffmann,K. Hiramatsu,T. Shibata,Nobuhiko Sawaki	1999	4
18	Local strain distribution of hexagonal GaN pyramids Journal of Crystal Growth ·A. Hoffmann,H. Siegle,A. Kaschner,L. Eckey,C. Thomsen,J. Christen,F. Bertram,Michael Schmidt,K. Hiramatsu,Shota Kitamura,Nobuhiko Sawaki	1998	17
19	Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers Journal of Applied Physics ·L. Eckey,Chen Jingsheng,J. Holst,A. Hoffmann,A. Kaschner,H. Siegle,C. Thomsen,B. Schineller,K. Heime,M. Heuken,Oliver Schön,R. Beccard	1998	85
20	Raman Scattering from Defects in GaN Materials science forum ·H. Siegle,A. Kaschner,P. Thurian,A. Hoffmann,I. Broser,C. Thomsen	1997	1

About A. Kaschner

A. Kaschner is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 40 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (37 papers), Semiconductor Quantum Structures and Devices (16 papers), Ga2O3 and related materials (14 papers), Metal and Thin Film Mechanics (13 papers), ZnO doping and properties (13 papers), Semiconductor materials and devices (7 papers), Acoustic Wave Resonator Technologies (5 papers) and Nanowire Synthesis and Applications (5 papers). The work is most often cited by research in Condensed Matter Physics (816 citations), Electronic, Optical and Magnetic Materials (592 citations), Materials Chemistry (939 citations), Atomic and Molecular Physics, and Optics (397 citations) and Electrical and Electronic Engineering (699 citations). A. Kaschner has collaborated with scholars based in Germany, Japan and Russia. Frequent co-authors include A. Hoffmann, C. Thomsen, G. Kaczmarczyk, M. Straßburg, Bertrand Meyer, A. Zeuner, D.M. Hofmann, U. Haboeck, H. Alves and Martin Straßburg. Their work appears in journals such as Applied Physics Letters, Physical review. B, Condensed matter, physica status solidi (b), Materials Science and Engineering B and Japanese Journal of Applied Physics.

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