H. Siegle

1.6k citations

36 papers · 1.4k · h-index 17

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 27
- GaN-based semiconductor devices and materials 26
Electronic, Optical and Magnetic Materials 14
- Ga2O3 and related materials 11
- Magnetic Properties and Applications 3

Co-authors: C. Thomsen (27 shared papers)A. Hoffmann (19 shared papers)G. Kaczmarczyk (5 shared papers)A. R. Goñi (3 shared papers)A. P. Litvinchuk (1 shared paper)K. Syassen (3 shared papers)J.‐M. Wagner (2 shared papers)L. Eckey (9 shared papers)
Journals: Applied Physics Letters (6 papers)Journal of Applied Physics (5 papers)Physical review. B, Condensed matter (3 papers)Materials Science and Engineering B (3 papers)physica status solidi (b) (2 papers)
Partner nations: Germany Japan United States

In The Last Decade

H. Siegle

35 papers receiving 1.3k citations

Peers

Countries citing papers authored by H. Siegle

Since Specialization

Citations

This map shows the geographic impact of H. Siegle's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Siegle with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Siegle more than expected).

Fields of papers citing papers by H. Siegle

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Siegle. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Siegle. The network helps show where H. Siegle may publish in the future.

Co-authors

The 25 scholars most cited alongside H. Siegle, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Siegle Line = papers co-authored together H. Siegle links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Zone-boundary phonons in hexagonal and cubic GaN Physical review. B, Condensed matter ·H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, C. Thomsen	1997	269
2	Effect of pressure on optical phonon modes and transverse effective charges inGaNandAlN Physical review. B, Condensed matter ·A. R. Goñi, H. Siegle, K. Syassen, C. Thomsen, J.‐M. Wagner	2001	202
3	Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy Solid State Communications ·H. Siegle, L. Eckey, A. Hoffmann, C. Thomsen, Bertrand Meyer, D. Schikora, M. Hankeln, K. Lischka	1995	128
4	Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers Journal of Applied Physics ·L. Eckey, U. von Gfug, J. Holst, A. Hoffmann, A. Kaschner, H. Siegle, C. Thomsen, B. Schineller, K. Heime, M. Heuken, Oliver Schön, R. Beccard	1998	86
5	Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy Applied Physics Letters ·A. Kaschner, H. Siegle, G. Kaczmarczyk, M. Straßburg, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt, D. Hommel	1999	83
6	Raman Frequencies and Angular Dispersion of Polar Modes in Aluminum Nitride and Gallium Nitride physica status solidi (b) ·L. Filippidis, H. Siegle, A. Hoffmann, C. Thomsen, K. Karch, F. Bechstedt	1996	81
7	Vertical strain and doping gradients in thick GaN layers Applied Physics Letters ·H. Siegle, A. Hoffmann, L. Eckey, C. Thomsen, J. Christen, F. Bertram, Daniel Schmidt, D. Rudloff, K. Hiramatsu	1997	71
8	Lattice dynamics in GaN and AlN probed with first‐ and second‐order Raman spectroscopy Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·U. Haboeck, H. Siegle, A. Hoffmann, C. Thomsen	2003	70
9	Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer Applied Physics Letters ·P. Perlin, Sudhir G. Subramanya, D. E. Mars, Joachim Krüger, Noad A. Shapiro, H. Siegle, Eicke R. Weber	1998	61
10	Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface Applied Physics Letters ·H. Siegle, P. Thurian, L. Eckey, A. Hoffmann, C. Thomsen, Bernhard Meyer, Hiroshi Amano, Isamu Akasaki, Theeradetch Detchprohm, K. Hiramatsu	1996	43
11	Stress analysis of selective epitaxial growth of GaN Applied Physics Letters ·Q. K. K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram	1999	40
12	A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films Journal of Applied Physics ·D. Meister, Matthias Böhm, M. Topf, W. Kriegseis, Wolfgang Burkhardt, I. Dirnstorfer, Sören Rösel, B. Farangis, Bertrand Meyer, A. Hoffmann, H. Siegle, C. Thomsen, J. Christen, F. Bertram	2000	39
13	Pressure and temperature effects on optical transitions in cubic GaN Journal of Applied Physics ·Z. X. Liu, A. R. Goñi, K. Syassen, H. Siegle, C. Thomsen, B. Schöttker, D. J. As, D. Schikora	1999	32
14	Hydrogen and water intercalation into YBa₂Cu₃O_7−δ: Structural properties of H₂YBa₂Cu₃O_8−δ Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·W. Günther, R. Schöllhorn, Matthias Epple, H. Siegle, C. Thomsen, B. Kabius, U. Poppe, J. Schubert, W. Zander	1999	24
15	Raman scattering from defects in GaN: The question of vibrational or electronic scattering mechanism Physical review. B, Condensed matter ·H. Siegle, A. Kaschner, A. Hoffmann, I. Broser, C. Thomsen, S. Einfeldt, D. Hommel	1998	21
16	GaN thin films by growth on Ga-rich GaN buffer layers Journal of Applied Physics ·Yihwan Kim, Sudhir G. Subramanya, H. Siegle, Joachim Krüger, P. Perlin, Eicke R. Weber, S. Ruvimov, Z. Liliental‐Weber	2000	18
17	Local strain distribution of hexagonal GaN pyramids Journal of Crystal Growth ·A. Hoffmann, H. Siegle, A. Kaschner, L. Eckey, C. Thomsen, J. Christen, F. Bertram, Michael Schmidt, K. Hiramatsu, Shota Kitamura, Nobuhiko Sawaki	1998	17
18	Changes in the real structure and magnetoresistance of Co90Fe10/Cu and Co90Fe10/Cu85Ag10Au5 multilayers after annealing Thin Solid Films ·David Rafaja, Jörg Ebert, G. Miehe, N. Martz, Michael Knapp, Branko Stahl, M. Ghafari, Horst Hahn, (unknown), Peter Schmollngruber, P. Farber, H. Siegle	2004	14
19	Über Mischinfektionen mit Ophiobolus graminis und Didymella exitialis Journal of Phytopathology ·H. Siegle	1961	11
20	Local Vibrational Modes of 3d Elements in Wurtzite Type ZnO and GaN Crystals Materials science forum ·P. Thurian, G. Kaczmarczyk, H. Siegle, R. Heitz, (unknown), I. Broser, Bertrand Meyer, R. Hoffbauer, Udo Scherz	1995	10

About H. Siegle

H. Siegle is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 36 papers that have together received 1.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (26 papers), Ga2O3 and related materials (11 papers), Semiconductor Quantum Structures and Devices (10 papers), ZnO doping and properties (9 papers), Semiconductor materials and devices (9 papers), Acoustic Wave Resonator Technologies (7 papers), Metal and Thin Film Mechanics (5 papers) and Magnetic Properties and Applications (3 papers). The work is most often cited by research in Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (551 citations), Materials Chemistry (746 citations), Atomic and Molecular Physics, and Optics (394 citations) and Mechanics of Materials (263 citations). H. Siegle has collaborated with scholars based in Germany, Japan and United States. Frequent co-authors include C. Thomsen, A. Hoffmann, G. Kaczmarczyk, A. R. Goñi, A. P. Litvinchuk, K. Syassen, J.‐M. Wagner, L. Eckey, A. Kaschner and D. Schikora. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Physical review. B, Condensed matter, Materials Science and Engineering B and physica status solidi (b).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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