B. Schöttker

569 total citations
22 papers, 478 citations indexed

About

B. Schöttker is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, B. Schöttker has authored 22 papers receiving a total of 478 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 14 papers in Atomic and Molecular Physics, and Optics and 8 papers in Electrical and Electronic Engineering. Recurrent topics in B. Schöttker's work include GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (14 papers) and ZnO doping and properties (8 papers). B. Schöttker is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (14 papers) and ZnO doping and properties (8 papers). B. Schöttker collaborates with scholars based in Germany and Brazil. B. Schöttker's co-authors include D. Schikora, D. J. As, K. Lischka, T. Frey, Alisson Padilha de Lima, A. Tabata, J. R. Leite, V. Lemos, Ulrich Köhler and L. M. R. Scolfaro and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

B. Schöttker

21 papers receiving 470 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Schöttker Germany 10 420 211 209 184 160 22 478
A. Shikanai Japan 9 428 1.0× 244 1.2× 305 1.5× 176 1.0× 138 0.9× 19 545
Hiroya Kimura Japan 5 429 1.0× 209 1.0× 135 0.6× 232 1.3× 164 1.0× 6 459
O. H. Nam South Korea 10 337 0.8× 170 0.8× 142 0.7× 111 0.6× 203 1.3× 15 425
T. Schupp Germany 10 303 0.7× 142 0.7× 169 0.8× 124 0.7× 152 0.9× 24 382
Nakao Akutsu Japan 12 471 1.1× 179 0.8× 168 0.8× 256 1.4× 267 1.7× 27 532
W. Imler United States 7 529 1.3× 208 1.0× 186 0.9× 242 1.3× 312 1.9× 10 596
Koji Uematsu Japan 5 506 1.2× 238 1.1× 151 0.7× 274 1.5× 214 1.3× 5 547
Da-Cheng Lu China 11 276 0.7× 162 0.8× 122 0.6× 142 0.8× 161 1.0× 33 378
Mitsuhisa Narukawa Japan 8 429 1.0× 279 1.3× 113 0.5× 210 1.1× 105 0.7× 9 450
A. Pelzmann Germany 13 372 0.9× 161 0.8× 129 0.6× 168 0.9× 130 0.8× 25 386

Countries citing papers authored by B. Schöttker

Since Specialization
Citations

This map shows the geographic impact of B. Schöttker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Schöttker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Schöttker more than expected).

Fields of papers citing papers by B. Schöttker

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Schöttker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Schöttker. The network helps show where B. Schöttker may publish in the future.

Co-authorship network of co-authors of B. Schöttker

This figure shows the co-authorship network connecting the top 25 collaborators of B. Schöttker. A scholar is included among the top collaborators of B. Schöttker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Schöttker. B. Schöttker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lisker, Marco, H. De Witte, A. Krtschil, et al.. (2000). Enhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-Doping. Materials science forum. 338-342. 1591–1594. 1 indexed citations
2.
As, D. J., A. G. Richter, J. Busch, et al.. (2000). Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 308–314. 2 indexed citations
3.
Goñi, A. R., K. Syassen, H. Siegle, et al.. (1999). Pressure and temperature effects on optical transitions in cubic GaN. Journal of Applied Physics. 86(2). 929–934. 32 indexed citations
4.
Tabata, A., Alisson Padilha de Lima, L. K. Teles, et al.. (1999). Structural properties and Raman modes of zinc blende InN epitaxial layers. Applied Physics Letters. 74(3). 362–364. 77 indexed citations
5.
Lima, Alisson Padilha de, T. Frey, Ulrich Köhler, et al.. (1999). Surface irregularities of MBE grown cubic GaN layers. Journal of Crystal Growth. 197(1-2). 31–36. 11 indexed citations
6.
As, D. J., et al.. (1999). Cathodoluminescence of homogeneous cubic GaN/GaAs(001) layers. Semiconductor Science and Technology. 14(2). 161–167. 10 indexed citations
7.
As, D. J., J. Busch, B. Schöttker, et al.. (1999). P- and N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 233–238. 1 indexed citations
8.
Holst, J., A. Hoffmann, I. Broser, et al.. (1999). Optical gain and stimulated emission of cleaved cubic gallium nitrite. Applied Physics Letters. 74(14). 1966–1968. 7 indexed citations
9.
Köhler, Ulrich, D. J. As, B. Schöttker, et al.. (1999). Optical constants of cubic GaN in the energy range of 1.5–3.7 eV. Journal of Applied Physics. 85(1). 404–407. 46 indexed citations
10.
Tabata, A., Alisson Padilha de Lima, J. R. Leite, et al.. (1999). Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. Semiconductor Science and Technology. 14(4). 318–322. 7 indexed citations
11.
Haug, Christian, et al.. (1999). Ion-channeling studies of cubic GaN and In Ga1−N on GaAs substrates. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 155(4). 489–497. 9 indexed citations
12.
Holst, J., L. Eckey, A. Hoffmann, et al.. (1998). Mechanisms of optical gain in cubic gallium nitrite. Applied Physics Letters. 72(12). 1439–1441. 39 indexed citations
13.
Schöttker, B., et al.. (1998). An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN. Materials science forum. 264-268. 1173–1176. 15 indexed citations
14.
As, D. J., et al.. (1998). Cathodoluminescence of Cubic GaN Epilayers. Materials science forum. 264-268. 1339–1342. 1 indexed citations
15.
Stolpe, Ines, Holger Müller, O. Portugall, et al.. (1998). Magneto-optical investigations on cubic GaN in high magnetic fields. Physica B Condensed Matter. 256-258. 659–662. 5 indexed citations
16.
Tabata, A., R. Enderlein, Alisson Padilha de Lima, et al.. (1998). Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAs. Materials science forum. 264-268. 1367–1370. 2 indexed citations
17.
As, D. J., B. Schöttker, T. Frey, et al.. (1998). Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy. Applied Physics Letters. 73(13). 1835–1837. 35 indexed citations
18.
As, D. J., et al.. (1997). The near band edge photoluminescence of cubic GaN epilayers. Applied Physics Letters. 70(10). 1311–1313. 125 indexed citations
19.
20.
Schikora, D., et al.. (1995). Molecular beam epitaxy of iron-doped HgSe layers. Semiconductor Science and Technology. 10(9). 1264–1268. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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