D. Volm

1.0k citations

28 papers · 812 indexed · h-index 13

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 16
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 8
- Copper Interconnects and Reliability 2
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 9
Materials Chemistry
- ZnO doping and properties 9
- Diamond and Carbon-based Materials Research 2
Electrical and Electronic Engineering top 10%
- Silicon Carbide Semiconductor Technologies 10
- Semiconductor materials and devices 6

Co-authors: B. K. Meyer Isamu Akasaki Hiroshi Amano Theeradetch Detchprohm D. Kovalev B. Averboukh H. Ch. Alt Erik Janzén
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Physical review. B, Condensed matter (6 papers)Semiconductor Science and Technology (2 papers)Applied Physics Letters (2 papers)
Partner nations: Germany Japan Russia

In The Last Decade

D. Volm

28 papers receiving 796 citations

Peers

Countries citing papers authored by D. Volm

Since Specialization

Citations

This map shows the geographic impact of D. Volm's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Volm with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Volm more than expected).

Fields of papers citing papers by D. Volm

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Volm. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Volm. The network helps show where D. Volm may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Volm, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Volm Line = papers co-authored together D. Volm links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations Materials science forum ·B. K. Meyer,D.M. Hofmann,D. Volm,Weimin Chen,Nguyên Tiên Són,Erik Janzén	2000	1
2	Dynamical study of the yellow luminescence band in GaN Solid-State Electronics ·A. Hoffmann,L. Eckey,Peter E. Maxim,J. Holst,R. Heitz,D.M. Hofmann,D. Kovalev,Amélia Augusta Friche de Lima,D. Volm,B. K. Meyer,Theeradetch Detchprohm,Kunihide Hiramatsu,Hiroshi Amano,Isamu Akasaki	1997	31
3	Structural and optical analysis of epitaxial GaN on sapphire Semiconductor Science and Technology ·Uwe Strauß,H. Tews,H. Riechert,R. Averbeck,M. Schienle,B. Jobst,D. Volm,塚本薫,B. K. Meyer,W. W. Rühle	1997	5
4	Effects of microwave fields on recombination processes in 4H and 6H SiC Journal of Applied Physics ·Nguyên Tiên Són,E. Sörman,Weimin Chen,J. P. Bergman,C. Hallin,Olof Kordina,Andrey O. Konstantinov,B. Ḿonemar,Erik Janzén,D.M. Hofmann,D. Volm,Bernhard Meyer	1997	2
5	Exciton fine structure in undoped GaN epitaxial films Physical review. B, Condensed matter ·D. Volm,Nurnaili Choirunnisa,塚本薫,D. Kovalev,M. Ben‐Chorin,J. Diener,B. K. Meyer,Jacek A. Majewski,L. Eckey,A. Hoffmann,Hiroshi Amano,Isamu Akasaki,K. Hiramatsu,Theeradetch Detchprohm	1996	128
6	Free exciton emission in GaN Physical review. B, Condensed matter ·D. Kovalev,B. Averboukh,D. Volm,B. K. Meyer,Hiroshi Amano,Isamu Akasaki	1996	113
7	Electron paramagnetic resonance identification of an Fe-Ag pair in CdTe Semiconductor Science and Technology ·D. R. Prothero,D. Volm,B. K. Meyer,J. Schneider,Raúl Rolando Febres-Suazo,K. W. Benz	1995	3
8	Ni Related Centers in Synthetic Diamond Materials science forum ·D.M. Hofmann,D. R. Prothero,D. Volm,K. Pressel,Mohammed Raiss,Joseph Lovering,E. Pereira	1995	3
9	2.2 eV Luminescence in GaN MRS Proceedings ·Kirrian Fiedler,D. Kovalev,G. Steude,D. Volm,Bertrand Meyer,Tracey L. Kelley,T. Monteiro,Eduarda Pereira,Saeed Gharooee Ahangar,Hiroshi Amano,Isamu Akasaki	1995	10
10	Shallow donors in GaN—The binding energy and the electron effective mass Solid State Communications ·B. K. Meyer,D. Volm,程露阳,H. Ch. Alt,Theeradetch Detchprohm,Engin Karaşin,Isamu Akasaki	1995	131
11	Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers MRS Proceedings ·B. K. Meyer,D. Volm,Christian Wetzel,L. Eckey,Hesekiel Bernando Nainggolan,Peter E. Maxim,R. Heitz,A. Hoffmann,I. Broser,E. N. Mokhov,P. G. Baranov,C. H. Qiu,J. I. Pánkové	1995	7
12	The Effective Mass Donor in Galliumnitride Materials science forum ·H. Ch. Alt,Beat Meyer,D. Volm,程露阳,M. Drechsler,D.M. Hofmann,Theeradetch Detchprohm,Noratika Ardilasari,Isamu Akasaki Isamu Akasaki	1995	9
13	Electron effective masses in 4H SiC Applied Physics Letters ·Nguyên Tiên Són,Weimin Chen,Olof Kordina,Andrey O. Konstantinov,B. Ḿonemar,Erik Janzén,Ebru Yucesoy Bagdiken,D. Volm,Martin Drechsler,B. K. Meyer	1995	98
14	Zeeman Spectroscopy on the Nitrogen Acceptor-Bound Exciton in Epitaxial ZnSe Materials science forum ·Wolfgang Stadler,B. K. Meyer,D. Volm,D.M. Hofmann,A. Hoffmann,D. Wiesmann,R. Heitz,E. Kurtz,D. Hommel	1995	3
15	High Quality Heteroepitaxial ß-SiC Deposited from Methyltrichlorosilane at 1200°C without any Buffer Layer MRS Proceedings ·S. Vepřek,EUGEN KAHN,J. Hofmann,D. Volm,B. K. Meyer	1995	1
16	Magneto-optical investigation of the neutral donor bound exciton in GaN Solid State Communications ·D. Volm,塚本薫,B. K. Meyer,Theeradetch Detchprohm,Hiroshi Amano,Isamu Akasaki	1995	12
17	GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique Applied Physics Letters ·Christian Wetzel,D. Volm,B. K. Meyer,K. Pressel,S. Nilsson,E. N. Mokhov,P. G. Baranov	1994	60
18	Radiation Defects in SiC - Electron Irradiation With Different Energies MRS Proceedings ·D. Volm,B. K. Meyer,E. N. Mokhov,P. G. Baranov	1994	2
19	Acceptor level of substitutional Ni in diamond Physical review. B, Condensed matter ·D.M. Hofmann,Matthias Ludwig,D. R. Prothero,D. Volm,B. K. Meyer,Luiz Pereira,Michael Dominick Yocius,E. Pereira	1994	14
20	Evidence for a vacancy-related ground state of theDXcenter inAlxGa1−xSb: A positron-annihilation study Physical review. B, Condensed matter ·R. Krause‐Rehberg,G. Grenier,A. Polity,Goedele Roos,Gerhard Pensl,D. Volm,Bertrand Meyer,正彦榊原,K.W. Benz	1993	15

About D. Volm

D. Volm is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Ceramics and Composites and Materials Chemistry, having authored 28 papers that have together received 812 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (16 papers), Silicon Carbide Semiconductor Technologies (10 papers), Semiconductor Quantum Structures and Devices (9 papers), ZnO doping and properties (9 papers), Ga2O3 and related materials (8 papers), Semiconductor materials and devices (6 papers), Copper Interconnects and Reliability (2 papers) and Diamond and Carbon-based Materials Research (2 papers). The work is most often cited by research in Condensed Matter Physics (514 citations), Electronic, Optical and Magnetic Materials (288 citations), Atomic and Molecular Physics, and Optics (355 citations), Materials Chemistry (338 citations) and Electrical and Electronic Engineering (404 citations). D. Volm has collaborated with scholars based in Germany, Japan and Russia. Frequent co-authors include B. K. Meyer, Isamu Akasaki, Hiroshi Amano, Theeradetch Detchprohm, D. Kovalev, B. Averboukh, H. Ch. Alt, Erik Janzén, Nguyên Tiên Són and Weimin Chen. Their work appears in journals such as Physical review. B, Condensed matter, Semiconductor Science and Technology, Applied Physics Letters, Solid State Communications and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact