R. Beccard

499 total citations
41 papers, 394 citations indexed

About

R. Beccard is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Beccard has authored 41 papers receiving a total of 394 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 24 papers in Electrical and Electronic Engineering and 20 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Beccard's work include GaN-based semiconductor devices and materials (25 papers), Semiconductor Quantum Structures and Devices (20 papers) and Semiconductor materials and devices (14 papers). R. Beccard is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Semiconductor Quantum Structures and Devices (20 papers) and Semiconductor materials and devices (14 papers). R. Beccard collaborates with scholars based in Germany, Sweden and Bulgaria. R. Beccard's co-authors include M. Heuken, B. Schineller, Oliver Schön, H. Jürgensen, K. Heime, J. Holst, P. Balk, L. Eckey, A. Hoffmann and A. Kaschner and has published in prestigious journals such as Journal of Applied Physics, Metallurgical and Materials Transactions A and Journal of Crystal Growth.

In The Last Decade

R. Beccard

39 papers receiving 371 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Beccard Germany 11 243 209 169 150 128 41 394
S.K. Mathis United States 7 219 0.9× 233 1.1× 162 1.0× 127 0.8× 72 0.6× 12 375
G. Zhao United States 13 268 1.1× 251 1.2× 151 0.9× 209 1.4× 189 1.5× 30 453
D. Dorman United States 8 239 1.0× 169 0.8× 137 0.8× 136 0.9× 117 0.9× 13 361
Akira Hirako Japan 11 271 1.1× 114 0.5× 80 0.5× 170 1.1× 193 1.5× 17 352
Roger-Louis Aulombard France 8 420 1.7× 131 0.6× 265 1.6× 219 1.5× 166 1.3× 11 488
S. Bidnyk United States 8 270 1.1× 98 0.5× 193 1.1× 131 0.9× 116 0.9× 24 337
Houqiang Xu China 11 209 0.9× 199 1.0× 185 1.1× 167 1.1× 134 1.0× 33 371
T. Sugahara Japan 9 320 1.3× 93 0.4× 157 0.9× 149 1.0× 145 1.1× 24 357
X. Li United States 12 315 1.3× 172 0.8× 122 0.7× 127 0.8× 116 0.9× 34 347
S. Kaiser Germany 11 186 0.8× 232 1.1× 172 1.0× 190 1.3× 86 0.7× 18 396

Countries citing papers authored by R. Beccard

Since Specialization
Citations

This map shows the geographic impact of R. Beccard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Beccard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Beccard more than expected).

Fields of papers citing papers by R. Beccard

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Beccard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Beccard. The network helps show where R. Beccard may publish in the future.

Co-authorship network of co-authors of R. Beccard

This figure shows the co-authorship network connecting the top 25 collaborators of R. Beccard. A scholar is included among the top collaborators of R. Beccard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Beccard. R. Beccard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hardtdegen, H., N. Kaluza, P. Javorka, et al.. (2005). Uniform III‐nitride growth in single wafer horizontal MOVPE reactors. physica status solidi (a). 202(5). 744–748. 10 indexed citations
2.
Strauch, G., et al.. (2003). 52.3: Invited Paper: OLED Manufacturing by Organic Vapor Phase Deposition. SID Symposium Digest of Technical Papers. 34(1). 1419–1421. 12 indexed citations
3.
Beccard, R., et al.. (2002). Growth of AlInGaP in multiwafer planetary reactors(R). 3002. 575–578. 1 indexed citations
4.
Riemann, T., J. Christen, A. Kaschner, et al.. (2001). Three-Dimensional Imaging of ELOG Growth Domains by Scanning Cathodoluminescence Tomography. physica status solidi (a). 188(2). 751–755. 4 indexed citations
5.
Wang, Chengxin, et al.. (2001). Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy. Journal of Crystal Growth. 230(3-4). 377–380. 7 indexed citations
6.
Valcheva, E., T. Paskova, M. V. Abrashev, et al.. (2001). Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates. Journal of Applied Physics. 90(12). 6011–6016. 14 indexed citations
7.
Paskova, T., Sukkaneste Tungasmita, E. Valcheva, et al.. (2000). Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 131–137. 5 indexed citations
8.
Wang, Can, V. Schwegler, M. Kamp, et al.. (2000). Hydride Vapour Phase Epitaxy Growth of GaN Layers under Reduced Reactor Pressure. physica status solidi (a). 180(1). 257–260. 2 indexed citations
9.
Paskova, T., Jens Birch, Sukkaneste Tungasmita, et al.. (1999). Thick Hydride Vapour Phase Epitaxial GaN Layers Grown on Sapphire with Different Buffers. physica status solidi (a). 176(1). 415–419. 19 indexed citations
10.
Schineller, B., et al.. (1998). Light emitting diodes as a monitor to study P-type doping of GaN-based heterostructures grown by MOVPE. Journal of Crystal Growth. 189-190. 798–802. 3 indexed citations
11.
Schön, Oliver, B. Schineller, M. Heuken, & R. Beccard. (1998). Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN. Journal of Crystal Growth. 189-190. 335–339. 31 indexed citations
12.
Eckey, L., J. Holst, A. Hoffmann, et al.. (1998). Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers. Journal of Applied Physics. 84(10). 5828–5830. 85 indexed citations
13.
Yablonskii, G. P., E. V. Lutsenko, Igor P. Marko, et al.. (1998). Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy. Journal of Electronic Materials. 27(4). 222–228. 10 indexed citations
14.
Schön, Oliver, et al.. (1998). MOVPE growth of high quality III-nitride material for light emitting device applications in a multiwafer system. Journal of Crystal Growth. 189-190. 344–348. 4 indexed citations
15.
Eckey, L., J. Holst, A. Hoffmann, et al.. (1998). Compensation effects in Mg-doped GaN epilayers. Journal of Crystal Growth. 189-190. 523–527. 32 indexed citations
16.
Beccard, R., et al.. (1998). MOCVD technology for the production of highly efficient GaAlP/GaAs/Ge solar cells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3419. 34190A–34190A. 1 indexed citations
17.
Schmitz, D., et al.. (1997). High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors. MRS Internet Journal of Nitride Semiconductor Research. 2. 4 indexed citations
18.
19.
Beccard, R., et al.. (1992). Growth of semi-insulating InP: Fe in the low pressure hydride VPE system. Journal of Crystal Growth. 121(3). 373–380. 10 indexed citations
20.
Beccard, R., Alfons Dehé, K. Heime, G. Laube, & P. Speier. (1991). Selective growth of InP in the low pressure hydride VPE system. Journal of Electronic Materials. 20(12). 1033–1036. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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