Shu-Tong Chang

899 total citations
87 papers, 717 citations indexed

About

Shu-Tong Chang is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Shu-Tong Chang has authored 87 papers receiving a total of 717 indexed citations (citations by other indexed papers that have themselves been cited), including 76 papers in Electrical and Electronic Engineering, 35 papers in Biomedical Engineering and 28 papers in Materials Chemistry. Recurrent topics in Shu-Tong Chang's work include Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Nanowire Synthesis and Applications (31 papers). Shu-Tong Chang is often cited by papers focused on Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Nanowire Synthesis and Applications (31 papers). Shu-Tong Chang collaborates with scholars based in Taiwan, United States and China. Shu-Tong Chang's co-authors include C. W. Liu, M. H. Lee, Ming-Han Liao, Wei‐Hao Ho, Yue Yang, Kuan‐Ting Chen, Kou‐Chen Liu, C.-Y. Liao, K.-T. Chen and S. Maikap and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Shu-Tong Chang

81 papers receiving 691 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shu-Tong Chang Taiwan 14 652 287 183 124 33 87 717
D.N. Kouvatsos Greece 12 551 0.8× 370 1.3× 153 0.8× 74 0.6× 24 0.7× 69 625
E. García-Hemme Spain 14 695 1.1× 482 1.7× 109 0.6× 250 2.0× 19 0.6× 49 751
Yichen Mao China 12 338 0.5× 163 0.6× 67 0.4× 166 1.3× 33 1.0× 33 381
Lap Chan Singapore 16 729 1.1× 149 0.5× 126 0.7× 195 1.6× 15 0.5× 68 812
Pavel Dutta United States 12 278 0.4× 130 0.5× 147 0.8× 68 0.5× 32 1.0× 38 351
Chao‐Hsin Chien Taiwan 13 513 0.8× 234 0.8× 82 0.4× 100 0.8× 37 1.1× 50 554
Jong Kyung Park South Korea 6 276 0.4× 308 1.1× 101 0.6× 90 0.7× 21 0.6× 16 428
H.F.W. Dekkers Belgium 15 563 0.9× 272 0.9× 66 0.4× 99 0.8× 13 0.4× 31 601
Ionel Stavarache Romania 15 430 0.7× 400 1.4× 185 1.0× 129 1.0× 34 1.0× 66 535
Caspar Leendertz Germany 15 883 1.4× 471 1.6× 122 0.7× 379 3.1× 32 1.0× 36 971

Countries citing papers authored by Shu-Tong Chang

Since Specialization
Citations

This map shows the geographic impact of Shu-Tong Chang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shu-Tong Chang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shu-Tong Chang more than expected).

Fields of papers citing papers by Shu-Tong Chang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shu-Tong Chang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shu-Tong Chang. The network helps show where Shu-Tong Chang may publish in the future.

Co-authorship network of co-authors of Shu-Tong Chang

This figure shows the co-authorship network connecting the top 25 collaborators of Shu-Tong Chang. A scholar is included among the top collaborators of Shu-Tong Chang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shu-Tong Chang. Shu-Tong Chang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, An-Chen, Hsin‐Chu Chen, Yanlin Chen, et al.. (2025). Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs. Materials Research Express. 12(2). 25901–25901.
2.
Liu, An-Chen, Yanlin Chen, Hsin‐Chu Chen, et al.. (2024). Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates. Electronics. 13(11). 2143–2143.
3.
Yang, Cheng‐Hsien & Shu-Tong Chang. (2022). First-Principles Study of the Optical Properties of TMDC/Graphene Heterostructures. Photonics. 9(6). 387–387. 12 indexed citations
4.
5.
Liao, C.-Y., Shih‐Hui Chang, Hailian Liang, et al.. (2020). Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO 2. Semiconductor Science and Technology. 35(12). 125011–125011. 2 indexed citations
6.
Yang, Cheng‐Hsien, et al.. (2020). A Mobility Stress Response Model of FinFET: Silicon vs Germanium. 107–108. 1 indexed citations
7.
Chen, Kuan‐Ting, et al.. (2019). Mobility model based on piezoresistance coefficients for Ge 3D transistor. SHILAP Revista de lepidopterología. 1(2). 92–97. 2 indexed citations
8.
Chen, Kuan‐Ting, et al.. (2019). Carrier Mobility Calculation for Monolayer Black Phosphorous. Journal of Nanoscience and Nanotechnology. 19(10). 6821–6825. 2 indexed citations
9.
Chen, Kuan‐Ting, Chieh Lo, Ming-Han Liao, et al.. (2018). Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance). IEEE Journal of the Electron Devices Society. 6. 900–904. 15 indexed citations
10.
Chen, Kuan‐Ting, et al.. (2018). Negative-Capacitance Fin Field-Effect Transistor Beyond the 7-nm Node. Journal of Nanoscience and Nanotechnology. 18(10). 6873–6878. 3 indexed citations
11.
Chen, Kuan‐Ting, et al.. (2017). Electron Mobility Calculation for Monolayer Transition Metal Dichalcogenide Alloy Using Tight-Binding Band Structure. Journal of Nanoscience and Nanotechnology. 17(11). 8516–8521. 2 indexed citations
12.
Lee, Chang‐Chun, et al.. (2015). Performance Investigation of Nanoscale Strained Ge pMOSFETs with a GeSn Alloy Stressor. Journal of Nanoscience and Nanotechnology. 15(11). 9158–9162. 2 indexed citations
13.
Cheng, Shuying, K.-T. Chen, & Shu-Tong Chang. (2015). Impact of strain on hole mobility in the inversion layer of PMOS device with SiGe alloy thin film. Thin Solid Films. 584. 135–140. 3 indexed citations
14.
Lee, Chang‐Chun & Shu-Tong Chang. (2012). Stress Impact of a Tensile Contact Etch Stop Layer on Nanoscale Strained NMOSFETs Embedded with a Silicon–Carbon Alloy Stressor. Journal of Nanoscience and Nanotechnology. 12(7). 5342–5346.
15.
Chang, Shu-Tong, Yang Liu, & Hao Ouyang. (2012). Impact of Strain Engineering on Nanoscale Strained III–V PMOSFETs. Journal of Nanoscience and Nanotechnology. 12(7). 5469–5473. 1 indexed citations
16.
Chang, Shu-Tong, et al.. (2012). Characterization of silicon–carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors. Thin Solid Films. 529. 444–448. 3 indexed citations
17.
18.
Liu, Kou‐Chen, et al.. (2011). Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-κ HfO2 as gate insulator. Thin Solid Films. 520(7). 3079–3083. 30 indexed citations
19.
Chang, Shu-Tong, et al.. (2011). Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(3). 1 indexed citations
20.
Lin, Chung-Yi, et al.. (2007). Impact of Source/Drain Si1-yCy Stressors on Silicon-on-Insulator N-type Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics. 46(4S). 2107–2107. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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