Dun‐Bao Ruan

882 total citations
51 papers, 673 citations indexed

About

Dun‐Bao Ruan is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Materials Chemistry. According to data from OpenAlex, Dun‐Bao Ruan has authored 51 papers receiving a total of 673 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 19 papers in Polymers and Plastics and 14 papers in Materials Chemistry. Recurrent topics in Dun‐Bao Ruan's work include Semiconductor materials and devices (27 papers), Thin-Film Transistor Technologies (26 papers) and Transition Metal Oxide Nanomaterials (19 papers). Dun‐Bao Ruan is often cited by papers focused on Semiconductor materials and devices (27 papers), Thin-Film Transistor Technologies (26 papers) and Transition Metal Oxide Nanomaterials (19 papers). Dun‐Bao Ruan collaborates with scholars based in Taiwan, China and United States. Dun‐Bao Ruan's co-authors include Po‐Tsun Liu, Kai‐Jhih Gan, Simon M. Sze, Kuei‐Shu Chang‐Liao, Simon M. Sze, Po‐Yi Kuo, Yanlin Li, Yung‐Chun Wu, Fu-Ju Hou and Yao‐Jen Lee and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and ACS Applied Materials & Interfaces.

In The Last Decade

Dun‐Bao Ruan

49 papers receiving 659 citations

Peers

Countries citing papers authored by Dun‐Bao Ruan

Since Specialization

Citations

This map shows the geographic impact of Dun‐Bao Ruan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dun‐Bao Ruan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dun‐Bao Ruan more than expected).

Fields of papers citing papers by Dun‐Bao Ruan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dun‐Bao Ruan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dun‐Bao Ruan. The network helps show where Dun‐Bao Ruan may publish in the future.

Co-authorship network of co-authors of Dun‐Bao Ruan

This figure shows the co-authorship network connecting the top 25 collaborators of Dun‐Bao Ruan. A scholar is included among the top collaborators of Dun‐Bao Ruan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dun‐Bao Ruan. Dun‐Bao Ruan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Enhancing Stability and Performance of Conductive Bridge Random Access Memory: Use of a Copper-Doped ZnO Nanorod-Embedded Switching Layer 2025 ·ACS Applied Materials & Interfaces ·Po‐Tsun Liu, (unknown), (unknown), Kai‐Jhih Gan, Dun‐Bao Ruan, (unknown), Shu‐Wei Chang	2
2	Surface functionalization of indium tin oxide via (3-aminopropyl) triethoxysilane and glucose oxidase for enhanced sensitivity in glucose detection 2025 ·Vacuum ·Kai‐Jhih Gan, (unknown), (unknown), Tiaoyang Li, Shao Hao Wang, Kuei‐Shu Chang‐Liao, Dun‐Bao Ruan	0
3	Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer 2025 ·IEEE Electron Device Letters ·(unknown), Kai‐Jhih Gan, Sheau-Shi Pan, Shao Hao Wang, Tiaoyang Li, Dun‐Bao Ruan	2
4	Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation With Supercritical Fluid Treatment 2024 ·IEEE Electron Device Letters ·Dun‐Bao Ruan, Kuei‐Shu Chang‐Liao, Kai‐Chun Yang, Kai‐Jhih Gan	2
5	Oxidation State Modification in Gate Dielectric for Ge nMOSFET With Mixed Hydrogen and Ozone Plasma Pretreatments 2024 ·IEEE Transactions on Electron Devices ·Dun‐Bao Ruan, Kuei‐Shu Chang‐Liao, (unknown), (unknown), (unknown), (unknown), Kai‐Jhih Gan	1
6	MIM Capacitors Featuring Low EOT and Low Leakage Current Density by Nitrogen-Incorporated HfO₂/ZrO₂/HfO₂ 2024 ·IEEE Transactions on Electron Devices ·(unknown), Dun‐Bao Ruan, Kuei‐Shu Chang‐Liao	1
7	Simultaneously Improved Electrical Characteristics of Ge n/p-FinFETs and Inverter With Oxidized Alloy-Like Hafnium Nitride Interfacial Layer 2024 ·IEEE Electron Device Letters ·Dun‐Bao Ruan, Kuei‐Shu Chang‐Liao, Cheng-Han Li, (unknown), Kai‐Jhih Gan	0
8	Sputtered Ultrathin WO₃ for Realizing Room-Temperature High-Sensitive NO₂ Gas Sensors 2023 ·ACS Applied Electronic Materials ·(unknown), (unknown), Po‐Tsun Liu, Hsiao‐Wen Zan, (unknown), Yue Kuo, Dun‐Bao Ruan, Kai‐Jhih Gan, (unknown)	17
9	Radiation hardness of InWZnO thin film as resistive switching layer 2022 ·Applied Physics Letters ·(unknown), Dun‐Bao Ruan, Kuei‐Shu Chang‐Liao, Kai‐Jhih Gan, Simon M. Sze, Po‐Tsun Liu	6
10	Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory 2020 ·Nanotechnology ·Kai‐Jhih Gan, Po‐Tsun Liu, Dun‐Bao Ruan, Chih-Chieh Hsu, (unknown), Simon M. Sze	7
11	Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology 2020 ·Applied Physics Letters ·Dun‐Bao Ruan, Po‐Tsun Liu, Kai‐Jhih Gan, (unknown), (unknown), Simon M. Sze	40
12	Highly durable and flexible gallium-based oxide conductive-bridging random access memory 2019 ·Scientific Reports ·Kai‐Jhih Gan, Po‐Tsun Liu, (unknown), Dun‐Bao Ruan, Simon M. Sze	45
13	Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel 2019 ·IEEE Electron Device Letters ·Yanlin Li, Kuei‐Shu Chang‐Liao, (unknown), (unknown), (unknown), (unknown), Dun‐Bao Ruan, Yi‐Ju Chen, Kai‐Shin Li, Guang-Li Luo	18
14	Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors 2019 ·Advanced Electronic Materials ·Dun‐Bao Ruan, Po‐Tsun Liu, (unknown), (unknown), (unknown), (unknown), Kai‐Jhih Gan, Simon M. Sze	33
15	Investigation of 5-nm-Thick Hf_0.5Zr_0.5O₂ Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope 2019 ·IEEE Journal of the Electron Devices Society ·(unknown), (unknown), Dun‐Bao Ruan, Fu-Ju Hou, (unknown), (unknown), Yung‐Chun Wu	9
16	Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture 2018 ·Scientific Reports ·Po‐Tsun Liu, Dun‐Bao Ruan, (unknown), (unknown), (unknown), Simon M. Sze	43
17	TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology 2018 ·Surface and Coatings Technology ·Kai‐Jhih Gan, Po‐Tsun Liu, (unknown), Dun‐Bao Ruan, (unknown), Simon M. Sze	32
18	Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer 2018 ·RSC Advances ·Dun‐Bao Ruan, Po‐Tsun Liu, (unknown), Po‐Yi Kuo, (unknown), Kai‐Jhih Gan, (unknown), Simon M. Sze	30
19	Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition 2018 ·Thin Solid Films ·Dun‐Bao Ruan, Po‐Tsun Liu, (unknown), (unknown), (unknown), (unknown), (unknown), Po‐Yi Kuo, Simon M. Sze	21
20	Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack 2018 ·Thin Solid Films ·Dun‐Bao Ruan, Po‐Tsun Liu, (unknown), Po‐Yi Kuo, (unknown), (unknown), (unknown), (unknown), Simon M. Sze	20

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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