C.-Y. Liao

632 total citations
34 papers, 521 citations indexed

About

C.-Y. Liao is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, C.-Y. Liao has authored 34 papers receiving a total of 521 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 20 papers in Materials Chemistry and 4 papers in Biomedical Engineering. Recurrent topics in C.-Y. Liao's work include Ferroelectric and Negative Capacitance Devices (27 papers), Semiconductor materials and devices (21 papers) and MXene and MAX Phase Materials (17 papers). C.-Y. Liao is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (27 papers), Semiconductor materials and devices (21 papers) and MXene and MAX Phase Materials (17 papers). C.-Y. Liao collaborates with scholars based in Taiwan, Switzerland and Germany. C.-Y. Liao's co-authors include M. H. Lee, Ming-Han Liao, K.-T. Chen, Chieh Lo, Shu-Tong Chang, K.-S. Li, C. S. Chang, C. W. Liu, Cheng-Hung Lin and Tuo‐Hung Hou and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

C.-Y. Liao

33 papers receiving 501 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.-Y. Liao Taiwan 13 479 265 41 28 15 34 521
Yuan-Chun Luo United States 13 544 1.1× 173 0.7× 42 1.0× 51 1.8× 3 0.2× 41 579
Ju Yong Park South Korea 12 453 0.9× 287 1.1× 38 0.9× 18 0.6× 12 0.8× 21 506
Chieh Lo Taiwan 10 268 0.6× 151 0.6× 23 0.6× 7 0.3× 14 0.9× 32 333
M. du Plessis South Africa 10 262 0.5× 154 0.6× 110 2.7× 23 0.8× 11 0.7× 34 334
Md. Shahriar Rahman Bangladesh 8 603 1.3× 74 0.3× 23 0.6× 19 0.7× 8 0.5× 32 642
Huaisheng Wang China 12 313 0.7× 132 0.5× 47 1.1× 39 1.4× 5 0.3× 45 367
Frank Jenau Germany 9 296 0.6× 209 0.8× 16 0.4× 4 0.1× 4 0.3× 97 361
Xiao Huo Hong Kong 9 220 0.5× 82 0.3× 58 1.4× 11 0.4× 3 0.2× 32 293
Gaurav Kaushal India 11 266 0.6× 63 0.2× 60 1.5× 12 0.4× 10 0.7× 43 342
Hyukjoon Kwon United States 10 148 0.3× 80 0.3× 21 0.5× 9 0.3× 4 0.3× 32 251

Countries citing papers authored by C.-Y. Liao

Since Specialization
Citations

This map shows the geographic impact of C.-Y. Liao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.-Y. Liao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.-Y. Liao more than expected).

Fields of papers citing papers by C.-Y. Liao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.-Y. Liao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.-Y. Liao. The network helps show where C.-Y. Liao may publish in the future.

Co-authorship network of co-authors of C.-Y. Liao

This figure shows the co-authorship network connecting the top 25 collaborators of C.-Y. Liao. A scholar is included among the top collaborators of C.-Y. Liao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.-Y. Liao. C.-Y. Liao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liao, C.-Y., et al.. (2024). Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse. IEEE Transactions on Electron Devices. 71(12). 7437–7441. 2 indexed citations
2.
3.
Liao, C.-Y., et al.. (2022). Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down. Applied Physics Letters. 121(25). 8 indexed citations
4.
Chen, Yu‐Chun, Chun‐Yu Lin, C.-Y. Liao, et al.. (2022). Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance. 2022 International Electron Devices Meeting (IEDM). 32.5.1–32.54. 10 indexed citations
5.
Liao, C.-Y., Chun‐Yu Lin, Zaizhu Lou, et al.. (2022). Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture. IEEE Electron Device Letters. 43(11). 1850–1853. 6 indexed citations
6.
Liao, C.-Y., Chin‐An Lin, Ping‐Hung Chen, et al.. (2022). Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM. 2022 International Electron Devices Meeting (IEDM). 36.6.1–36.6.4. 14 indexed citations
7.
Liao, C.-Y., Zaizhu Lou, Chun‐Yu Lin, et al.. (2022). Correlation between Access Polarization and High Endurance (˜ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2. P9–1. 10 indexed citations
8.
Liao, C.-Y., et al.. (2021). Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO 2 Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory. ECS Journal of Solid State Science and Technology. 10(6). 65015–65015. 4 indexed citations
9.
Liao, C.-Y., Chun‐Yu Lin, Zaizhu Lou, et al.. (2021). Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory. IEEE Electron Device Letters. 42(10). 1464–1467. 23 indexed citations
10.
Liao, C.-Y., et al.. (2021). Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory. IEEE Electron Device Letters. 42(4). 617–620. 63 indexed citations
11.
Liao, C.-Y., Shih‐Hui Chang, Hailian Liang, et al.. (2020). Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO 2. Semiconductor Science and Technology. 35(12). 125011–125011. 2 indexed citations
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14.
Chen, K.-T., C.-Y. Liao, Chieh Lo, et al.. (2019). Ferroelectric HfZrO2 FETs for steep switch onset. Microelectronic Engineering. 215. 110991–110991. 9 indexed citations
15.
Chen, Hong-Yu, et al.. (2019). Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs. Applied Physics Express. 12(7). 71003–71003. 5 indexed citations
16.
Chen, Kuan‐Ting, Chieh Lo, Ming-Han Liao, et al.. (2018). Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance). IEEE Journal of the Electron Devices Society. 6. 900–904. 15 indexed citations
17.
Chen, Yaw-Chung & C.-Y. Liao. (2016). A study of QoS feedback schemes on WiFi multicast for media streaming services. 3. 278–283. 1 indexed citations
18.
Liao, C.-Y., et al.. (2013). An AlGaAs/GaAs Photo-Transistor-Based Fluorescence Detection System for Human Serum Albumin. Journal of The Electrochemical Society. 160(9). B156–B159. 3 indexed citations
19.
Betser, Y., et al.. (2006). A 4b/cell NROM 1Gb Data-Storage Memory. 448–458. 6 indexed citations
20.
Tseng, Chih‐Huang, Ming-Yi Lee, Lee‐Feng Chien, et al.. (1993). Golden Mandarin (II)-an improved single-chip real-time Mandarin dictation machine for Chinese language with very large vocabulary. IEEE International Conference on Acoustics Speech and Signal Processing. 503–506 vol.2. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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