C.-Y. Liao

632 citations

34 papers · 521 · h-index 13

Impact in

Electrical and Electronic Engineering top 10%
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
Materials Chemistry
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 31
- Ferroelectric and Negative Capacitance Devices 27
- Semiconductor materials and devices 21
- Advanced Memory and Neural Computing 10
- Advanced Wireless Network Optimization 1
Materials Chemistry 20
- MXene and MAX Phase Materials 17
- Ferroelectric and Piezoelectric Materials 3

Co-authors: M. H. Lee (28 shared papers)Ming-Han Liao (11 shared papers)K.-T. Chen (7 shared papers)Chieh Lo (6 shared papers)K.-S. Li (3 shared papers)Shu-Tong Chang (5 shared papers)C. S. Chang (3 shared papers)C. W. Liu (6 shared papers)
Journals: IEEE Electron Device Letters (6 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (1 paper)Journal of The Electrochemical Society (1 paper)Applied Physics Express (1 paper)
Partner nations: Taiwan Switzerland Germany

In The Last Decade

C.-Y. Liao

33 papers receiving 501 citations

Peers

Countries citing papers authored by C.-Y. Liao

Since Specialization

Citations

This map shows the geographic impact of C.-Y. Liao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.-Y. Liao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.-Y. Liao more than expected).

Fields of papers citing papers by C.-Y. Liao

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.-Y. Liao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.-Y. Liao. The network helps show where C.-Y. Liao may publish in the future.

Co-authors

The 25 scholars most cited alongside C.-Y. Liao, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C.-Y. Liao Line = papers co-authored together C.-Y. Liao links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 34 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Non-Volatile Ferroelectric FETs Using 5-nm Hf_0.5Zr_0.5O₂ With High Data Retention and Read Endurance for 1T Memory Applications IEEE Electron Device Letters ·K.-T. Chen, Hsin-Chin Chen, C.-Y. Liao, G.-Y. Siang, Chieh Lo, Ming-Han Liao, K.-S. Li, Shu-Tong Chang, M. H. Lee	2019	97
2	Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂ for High-Density Nonvolatile Memory IEEE Electron Device Letters ·C.-Y. Liao, K.-Y. Hsiang, Fan-Chun Hsieh, S.-H. Chiang, S.-H. Chang, Jun Liu, C.-F. Lou, Cheng-Hung Lin, T.-C. Chen, C. S. Chang, M. H. Lee	2021	63
3	Ferroelectric HfZrO₂ With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training IEEE Transactions on Electron Devices ·K.-Y. Hsiang, C.-Y. Liao, K.-T. Chen, Y.-Y. Lin, C.-Y. Chueh, Chih‐Wei Chang, Yi‐Ju Tseng, Y.-J. Yang, S. T. Chang, Ming-Han Liao, Tuo‐Hung Hou, Cheng‐Hsien Wu, Chih-Chao Ho, J.P. Chiu, C. S. Chang, M. H. Lee	2020	47
4	Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs M. H. Lee, K.-T. Chen, C.-Y. Liao, S.-S. Gu, G.-Y. Siang, Yu-Chen Chou, Hsin-Chin Chen, Jian Le, R.-C. Hong, Z.-Y. Wang, Shih‐Yao Chen, P.-G. Chen, Ming Tang, Yu-De Lin, H.-Y. Lee, K.-S. Li, C. W. Liu	2018	38
5	Ferroelectric Al:HfO<inf>2</inf> negative capacitance FETs M. H. Lee, P.-G. Chen, Sheng-Ting Fan, Y. C. Chou, Chin-Guo Kuo, Cheng Tang, H.-H. Chen, S.-S. Gu, R.-C. Hong, Z.-Y. Wang, Shih‐Yao Chen, C.-Y. Liao, K.-T. Chen, S. T. Chang, Ming-Han Liao, K.-S. Li, C. W. Liu	2017	34
6	Golden Mandarin (II)-an improved single-chip real-time Mandarin dictation machine for Chinese language with very large vocabulary IEEE International Conference on Acoustics Speech and Signal Processing ·L.-s. Lee, Chih‐Huang Tseng, Kexin Chen, I-Jung Hung, Ming-Yi Lee, Lee‐Feng Chien, Yi-Chen Lee, Ren-Yuan Lyu, Hsin‐Min Wang, Yi‐Hsuan Wu, Tser‐Sheng Lin, Haozhan Gu, Chi-Ping Nee, C.-Y. Liao, Yao‐Jong Yang, Yeun‐Chung Chang, Rung-Chiuan Yang	1993	24
7	Bilayer-Based Antiferroelectric HfZrO₂ Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory IEEE Electron Device Letters ·K.-Y. Hsiang, C.-Y. Liao, Jun Liu, J.-F. Wang, S.-H. Chiang, S.-H. Chang, Fan-Chun Hsieh, H. Liang, Chun‐Yu Lin, Zaizhu Lou, Tuo‐Hung Hou, C. W. Liu, M. H. Lee	2021	23
8	Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode K.-T. Chen, M. H. Lee, C.-Y. Liao, Chieh Lo, Hsin-Chin Chen, G.-Y. Siang, S. Liu, Shu-Jau Chang, Ming-Han Liao, S.-T. Chang	2019	21
9	Atomic Layer Deposition Plasma-Based Undoped-HfO₂ Ferroelectric FETs for Non-Volatile Memory IEEE Electron Device Letters ·Jun-Dao Luo, Yu‐Ying Lai, K.-Y. Hsiang, Chia-Feng Wu, Hao-Tung Chung, Wei-Shuo Li, C.-Y. Liao, Pin-Guang Chen, Kuan‐Neng Chen, M. H. Lee, Huang‐Chung Cheng	2021	19
10	Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂ to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·C.-Y. Liao, K.-Y. Hsiang, Zaizhu Lou, Hsien‐Cheng Tseng, Cheng-Hung Lin, Z.-X. Li, Fan-Chun Hsieh, C.-C. Wang, F.-S. Chang, W.-C. Ray, Yang-Yan Tseng, S. T. Chang, T.-C. Chen, M. H. Lee	2022	18
11	Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) IEEE Journal of the Electron Devices Society ·Kuan‐Ting Chen, Chieh Lo, Pin-Guang Chen, Ming-Han Liao, Kai‐Shin Li, Shu-Tong Chang, M. H. Lee, S.-S. Gu, Zhengying Wang, C.-Y. Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih‐Yao Chen, Hongyu Chen, G.-Y. Siang	2018	15
12	Superlattice HfO₂-ZrO₂ based Ferro-Stack HfZrO₂ FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹ cycles for Multibit NVM 2022 International Electron Devices Meeting (IEDM) ·C.-Y. Liao, Zhonghao Lou, Chin‐An Lin, A. Senapati, Rajdip Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, Jia-Yang Lee, Ping‐Hung Chen, F.-S. Chang, Hsin-Chun Tseng, C.-C. Wang, Jeng‐Han Tsai, Y.-T. Tang, S. T. Chang, C. W. Liu, S. Maikap, M. H. Lee	2022	14
13	BOUNDARY INTEGRAL EQUATION METHOD FOR EVALUATING THE PERFORMANCE OF STRAIGHT-THROUGH RESONATOR WITH MEAN FLOW Journal of Sound and Vibration ·Chun‐Neng Wang, C.-Y. Liao	1998	12
14	Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO₂ Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance 2022 International Electron Devices Meeting (IEDM) ·K.-Y. Hsiang, Yu‐Chun Chen, F.-S. Chang, Chun‐Yu Lin, C.-Y. Liao, Zaizhu Lou, J.-Y. Lee, W.-C. Ray, Z.-X. Li, C.-C. Wang, Hsien‐Cheng Tseng, Ping‐Hung Chen, Jeng‐Han Tsai, Ming-Han Liao, Tuo‐Hung Hou, Cheng-Hong Liu, Pin-Man Huang, Pin Su, M. H. Lee	2022	10
15	Correlation between Access Polarization and High Endurance (˜ 10¹² cycling) of Ferroelectric and Anti-Ferroelectric HfZrO₂ K.-Y. Hsiang, C.-Y. Liao, Y.-Y. Lin, Zaizhu Lou, Chun‐Yu Lin, J.-Y. Lee, F.-S. Chang, Z.-X. Li, Hsien‐Cheng Tseng, C.-C. Wang, W.-C. Ray, Tuo‐Hung Hou, T.-C. Chen, C. S. Chang, M. H. Lee	2022	10
16	Ferroelectric HfZrO2 FETs for steep switch onset Microelectronic Engineering ·K.-T. Chen, C.-Y. Liao, Hsin-Chin Chen, Chieh Lo, G.-Y. Siang, Y.-Y. Lin, Yi‐Ju Tseng, Chih‐Wei Chang, C.-Y. Chueh, Y.-J. Yang, Ming-Han Liao, Kangran Li, Shu-Tong Chang, M. H. Lee	2019	9
17	Ferroelectric Undoped HfO_x Capacitor With Symmetric Synaptic for Neural Network Accelerator IEEE Transactions on Electron Devices ·Jun-Dao Luo, Yu‐Ying Lai, K.-Y. Hsiang, Chia-Feng Wu, Yihshiuan Yeh, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, C.-Y. Liao, Pin-Guang Chen, Kuan‐Neng Chen, M. H. Lee, Huang‐Chung Cheng	2021	9
18	Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down Applied Physics Letters ·C.-Y. Liao, Chen-Ying Lin, Zhi-Xian Lee, K.-Y. Hsiang, Zhao-Feng Lou, Vita Pi‐Ho Hu, M. H. Lee	2022	8
19	Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture IEEE Electron Device Letters ·K.-Y. Hsiang, C.-Y. Liao, Jun Liu, Chun‐Yu Lin, J.-Y. Lee, Zaizhu Lou, F.-S. Chang, W.-C. Ray, Z.-X. Li, Hsien‐Cheng Tseng, C.-C. Wang, Ming-Han Liao, Tuo‐Hung Hou, M. H. Lee	2022	6
20	A 4b/cell NROM 1Gb Data-Storage Memory Y. Polansky, A. Lavan, Ran Sahar, O. Dadashev, Y. Betser, Guy Cohen, E. Maayan, B. Eitan, Ful-Long Ni, Yen-Hui Joseph Ku, Chih-Yuan Lu, T.-C. Chen, C.-Y. Liao, Chin-Hung Chang, Chung-Kuang Chen, Wen-Chiao Ho, Yite Shih, Wenchi Ting, Wen-Pin Lu	2006	6

About C.-Y. Liao

C.-Y. Liao is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Computer Networks and Communications and Atomic and Molecular Physics, and Optics, having authored 34 papers that have together received 521 indexed citations. Recurring topics across this work include Ferroelectric and Negative Capacitance Devices (27 papers), Semiconductor materials and devices (21 papers), MXene and MAX Phase Materials (17 papers), Advanced Memory and Neural Computing (10 papers), Ferroelectric and Piezoelectric Materials (3 papers), Acoustic Wave Resonator Technologies (1 paper), Analog and Mixed-Signal Circuit Design (1 paper) and Advanced Wireless Network Optimization (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (479 citations), Materials Chemistry (265 citations), Signal Processing (15 citations), Biomedical Engineering (41 citations) and Artificial Intelligence (28 citations). C.-Y. Liao has collaborated with scholars based in Taiwan, Switzerland and Germany. Frequent co-authors include M. H. Lee, Ming-Han Liao, K.-T. Chen, Chieh Lo, K.-S. Li, Shu-Tong Chang, C. S. Chang, C. W. Liu, Cheng-Hung Lin and Tuo‐Hung Hou. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of The Electrochemical Society and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

C.-Y. Liao

Impact in

Papers in i

In The Last Decade

C.-Y. Liao

Peers

Countries citing papers authored by C.-Y. Liao

Fields of papers citing papers by C.-Y. Liao

All Works

About C.-Y. Liao

Explore authors with similar magnitude of impact

Papers in