Yanqing Wu

13.2k citations

204 papers · 10.5k indexed · 7 hit papers · h-index 43

Impact in

Materials Chemistry top 0.5%
- Graphene research and applications
- 2D Materials and Applications
- MXene and MAX Phase Materials
Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices

Papers in

Electrical and Electronic Engineering 152
- Semiconductor materials and devices 70
- Ferroelectric and Negative Capacitance Devices 48
- Advancements in Semiconductor Devices and Circuit Design 44
- Advanced Memory and Neural Computing 30
- Perovskite Materials and Applications 21
Materials Chemistry 104
- 2D Materials and Applications 55
- Graphene research and applications 42
- MXene and MAX Phase Materials 30

Co-authors: Phaedon Avouris Fengnian Xia Xuefei Li Yu-Ming Lin Damon B. Farmer Wenjuan Zhu K.A. Jenkins Yi Xuan
Journals: IEEE Electron Device Letters (22 papers)Applied Physics Letters (21 papers)Nature Electronics (7 papers)Advanced Materials (7 papers)ACS Applied Materials & Interfaces (6 papers)
Partner nations: China United States Singapore

In The Last Decade

Yanqing Wu

191 papers receiving 10.3k citations

Hit Papers

7 papers align trajectories log scale

Nanometre-thin indium tin oxide for advanced high-performance electronics 2019 · 299 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2019 Nature Materials
2016 Advanced Materials
2013 Nature Photonics
2012 Nature Nanotechnology
2011 Science
2011 Nature
2011 Nature Nanotechnology

Peers

Countries citing papers authored by Yanqing Wu

Since Specialization

Citations

This map shows the geographic impact of Yanqing Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yanqing Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yanqing Wu more than expected).

Fields of papers citing papers by Yanqing Wu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yanqing Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yanqing Wu. The network helps show where Yanqing Wu may publish in the future.

Co-authors

The 25 scholars most cited alongside Yanqing Wu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yanqing Wu Line = papers co-authored together Yanqing Wu links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Amorphous indium tin oxide transistors for power amplification above 10 GHz Nature Electronics ·Qianlan Hu, Brines Ws, John C. Cebrian, Chengru Gu, Shiyuan Liu, Ru Huang, Yanqing Wu	2025	0
2	Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN Applied Physics Letters ·松本佳代, Fujun Xu, Jing Lang, Jiaming Wang, Denes Ef, Ji Chen, Farkhana, Zhiyong Zhang, Helfia Nil Chalis, Yanqing Wu, Jumpee Granger, Xuelin Yang, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen	2025	2
3	Demonstration of Low-Power Three-Dimensional CMOS Inverters Based on Si p-Tunnel FET and ITO n-FET IEEE Electron Device Letters ·裴劲松, Rachael Essig, Qianlan Hu, Zhiyu Wang, Xiong Xiong, SM Mills, Brines Ws, Mitranita Mitranita, Yoon HE, Mal Smith, Mercedes Sáenz-Alonso, Qianqian Huang, Yanqing Wu, Ru Huang	2025	0
4	A Charge-Domain Design of Ferroelectric Tunneling Junction Synapse for Spiking Neural Networks IEEE Transactions on Electron Devices ·Xianglei Zhu, Ning Feng, Jingyi Qiu, Xianyu Wang, Chien-Heng Chen, Yanqing Wu, Lining Zhang	2025	1
5	Danhong Injection Inhibits Apoptosis in Ischemia/Reperfusion Injury Based on Network Pharmacology Analysis, Molecular Docking, and Experimental Verification ACS Omega ·颜文竹, Naoki Tsuchiya, Long Qi, Yanqing Wu, Yan Guo, C. Giraldi, Pascalis Trentsios, Bo Jin	2025	0
6	Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN Applied Physics Letters ·松本佳代, Fujun Xu, Jing Lang, Jiaming Wang, Denes Ef, Zhiyong Zhang, Ji Chen, Helfia Nil Chalis, Farkhana, Yanqing Wu, Jumpee Granger, Ning Tang, Xinqiang Wang, Z. X. Qin, Weikun Ge, Bo Shen	2024	1
7	Optimized electrical properties of p-type field-effect transistors based on WSe2 grown at moderate temperatures Applied Physics Letters ·Joseph Melon, 추승희, AnithaB Chalageri, H. T.N., Yanqing Wu	2023	3
8	Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors Applied Physics Reviews ·AnithaB Chalageri, Xuefei Li, 克幸大澤, Chien-Heng Chen, Xin Wang, Yanqing Wu	2023	12
9	First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record I_d = 2.05 mA/µm, g_m = 1.13 mS/µm and Ultralow SS = 66 mV/dec Mitranita Mitranita, Wenjie Zhao, Qianlan Hu, Chengru Gu, Brines Ws, Honggang Liu, Ru Huang, Yanqing Wu	2023	6
10	SIRT3 ameliorates diabetes-associated cognitive dysfunction via regulating mitochondria-associated ER membranes Journal of Translational Medicine ·Dong Chen, Cailin Wang, João Seródio, 李亦凡, Tania de Oliveira, Yanqing Wu, Xingjun Jiang, Lulu Li, Kevin LeVick, Gang Li	2023	35
11	Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors IEEE Transactions on Electron Devices ·Lakhdar M Haj, Collins Kym L, A.P.F. Bassi, Vicente Javier López Mate, Min Zeng, Zhigang Ji, Yanqing Wu, Andrea Padovani, Luca Larcher, Milan Pešić, Runsheng Wang, Ru Huang	2022	11
12	An ultrasensitive electrochemical sensor based on in situ synthesized manganese dioxide/gold nanoparticles nanocomposites for rapid detection of methylmercury in foodstuffs Analytical Methods ·Yi Zhang, Yanqing Wu, Homayoun Habibi, C. Ramesh, Xiaoping Wu	2022	11
13	Author Correction: How to report and benchmark emerging field-effect transistors Nature Electronics ·Zhihui Cheng, Chin‐Sheng Pang, Peiqi Wang, Son Thai Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian‐Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter	2022	2
14	Multiscale viscoelastic constitutive modeling of solid propellants subjected to large deformation International Journal of Solids and Structures ·Kathryn Bailey, Yanqing Wu, Xiao Hou, Xiangyang Liu, (unknown), (unknown)	2022	16
15	How to report and benchmark emerging field-effect transistors Nature Electronics ·Zhihui Cheng, Chin‐Sheng Pang, Peiqi Wang, Son Thai Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian‐Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter	2022	130
16	Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS₂ Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory ACS Applied Materials & Interfaces ·Xiaolei Ma, Yue‐Yang Liu, Lang Zeng, Jiezhi Chen, Runsheng Wang, Lin‐Wang Wang, Yanqing Wu, Xiangwei Jiang	2021	25
17	Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf_0.5Zr_0.5O₂-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions IEEE Journal of the Electron Devices Society ·A.P.F. Bassi, Lakhdar M Haj, Mitsuru Hirano, ShuLiu, Runsheng Wang, Yanqing Wu, Pengpeng Ren, Zhigang Ji, Ru Huang	2021	14
18	Improved low-frequency noise in CVD bilayer MoS2 field-effect transistors Applied Physics Letters ·Qingguo Gao, Chongfu Zhang, Zichuan Yi, Suzanne Illing, Feng Chi, Li Liu, Xuefei Li, Yanqing Wu	2021	18
19	Ternary Gd Y O high k oxide films for next-generation gate dielectrics and their annealing temperature effects Ceramics International ·Shuan Li, Yanqing Wu, Kai Fu, Yanru Guo, Jie Zheng, Wenhuai Tian, Xingguo Li	2019	10
20	Optical Properties of Graphene Nanoribbons Bulletin of the American Physical Society ·Hugen Yan, Tony Low, Wenjuan Zhu, Yanqing Wu, F. Guinea, Fengnian Xia, Phaedon Avouris	2013	1

About Yanqing Wu

Yanqing Wu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Biomedical Engineering, having authored 204 papers that have together received 10.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (70 papers), 2D Materials and Applications (55 papers), Ferroelectric and Negative Capacitance Devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), Graphene research and applications (42 papers), Advanced Memory and Neural Computing (30 papers), MXene and MAX Phase Materials (30 papers) and Perovskite Materials and Applications (21 papers). The work is most often cited by research in Materials Chemistry (6.6k citations), Electrical and Electronic Engineering (6.4k citations), Electronic, Optical and Magnetic Materials (1.8k citations), Biomedical Engineering (3.4k citations) and Atomic and Molecular Physics, and Optics (2.2k citations). Yanqing Wu has collaborated with scholars based in China, United States and Singapore. Frequent co-authors include Phaedon Avouris, Fengnian Xia, Xuefei Li, Yu-Ming Lin, Damon B. Farmer, Wenjuan Zhu, K.A. Jenkins, Yi Xuan, Hugen Yan and Marcus Freitag. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Nature Electronics, Advanced Materials and ACS Applied Materials & Interfaces.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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