M. Curtin

458 total citations
20 papers, 374 citations indexed

About

M. Curtin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, M. Curtin has authored 20 papers receiving a total of 374 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 3 papers in Biomedical Engineering. Recurrent topics in M. Curtin's work include Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Semiconductor Quantum Structures and Devices (6 papers). M. Curtin is often cited by papers focused on Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Semiconductor Quantum Structures and Devices (6 papers). M. Curtin collaborates with scholars based in United States and Australia. M. Curtin's co-authors include Anthony Lochtefeld, Jie Bai, Malcolm S. Carroll, B. T. Adekore, M. Carroll, Ji‐Sang Park, Michael Dudley, Zhiyuan Cheng, Ji‐Soo Park and J.G. Fiorenza and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M. Curtin

18 papers receiving 342 citations

Peers

M. Curtin

EEE

AMPO

SCF

J.G. Fiorenza United States

T. Hamano Japan

P. Sana United States

J. Harari France

Michael Canonico United States

Selin Hwee-Gee Teo Singapore

Hasina H. Mamtaz United States

W. K. Liu United States

J.F. Nijs Belgium

Nupur Bhargava United States

J.G. Fiorenza United States

M. Curtin

512 ×1.4

EEE

162 ×1.0

AMPO

144 ×1.0

65 ×0.8

13 ×0.5

SCF

Citations per year, relative to M. Curtin M. Curtin (= 1×) peers J.G. Fiorenza

Countries citing papers authored by M. Curtin

Since Specialization

Citations

This map shows the geographic impact of M. Curtin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Curtin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Curtin more than expected).

Fields of papers citing papers by M. Curtin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Curtin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Curtin. The network helps show where M. Curtin may publish in the future.

Co-authorship network of co-authors of M. Curtin

This figure shows the co-authorship network connecting the top 25 collaborators of M. Curtin. A scholar is included among the top collaborators of M. Curtin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Curtin. M. Curtin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gerger, Andrew, M. Curtin, Li Wang, et al.. (2015). GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance. Materials Science in Semiconductor Processing. 39. 614–620. 10 indexed citations

Lochtefeld, Anthony, Andrew Gerger, M. Carroll, et al.. (2013). 16.8% Efficient Ultra-Thin Silicon Solar Cells on Steel. EU PVSEC. 2641–2644. 3 indexed citations

Gerger, Andrew, Li Wang, M. Curtin, et al.. (2013). GaInP window layers for GaAsP on SiGe/Si single and dual-junction solar cells. 2462–2465. 8 indexed citations

Gerger, Andrew, et al.. (2012). Investigating Voltage as a Function of the Reduced Junction Area for Thin Silicon Solar Cells That Utilize Epitaxial Lateral Overgrowth. IEEE Journal of Photovoltaics. 3(1). 119–124.

Gerger, Andrew, M. Díaz, M. Curtin, et al.. (2012). Progression of III-V/SiGe Tandem Solar Cell on Si Substrates. EU PVSEC. 70–74. 1 indexed citations

Barnett, Allen, et al.. (2011). Independent Approaches to Increase Voltage and Current in Thin Crystalline Silicon Solar Cells. EU PVSEC. 2443–2447. 2 indexed citations

Park, Ji‐Sang, M. Curtin, Jie Bai, et al.. (2009). Fabrication of Low-Defectivity, Compressively Strained Ge on Si[sub 0.2]Ge[sub 0.8] Structures Using Aspect Ratio Trapping. Journal of The Electrochemical Society. 156(4). H249–H249. 5 indexed citations

Park, Ji‐Sang, M. Curtin, Jie Bai, et al.. (2009). Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth. Electrochemical and Solid-State Letters. 12(4). H142–H142. 36 indexed citations

Park, Ji‐Soo, Jie Bai, M. Curtin, M. Carroll, & Anthony Lochtefeld. (2008). Facet formation and lateral overgrowth of selective Ge epitaxy on SiO2-patterned Si(001) substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(1). 117–121. 23 indexed citations

10.

Curtin, M., et al.. (2008). Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(5). 1740–1744. 5 indexed citations

11.

Bai, Jie, et al.. (2008). Chemical Mechanical Polishing of Epitaxial Germanium on SiO₂-patterned Si(001) Substrates. ECS Transactions. 16(10). 237–248. 14 indexed citations

12.

Park, Ji‐Soo, et al.. (2007). Reduced-Pressure Chemical Vapor Deposition of Epitaxial Ge Films on Si(001) Substrates Using GeCl[sub 4]. Electrochemical and Solid-State Letters. 10(11). H313–H313. 4 indexed citations

13.

Bai, Jie, Ji‐Sang Park, Zhiyuan Cheng, et al.. (2007). Study of the defect elimination mechanisms in aspect ratio trapping Ge growth. Applied Physics Letters. 90(10). 81 indexed citations

14.

Curtin, M., et al.. (2007). Thin strained layers inserted in compositionally graded SiGe buffers and their effects on strain relaxation and dislocation. Journal of Applied Physics. 101(5). 5 indexed citations

15.

Park, Ji‐Soo, Jie Bai, M. Curtin, et al.. (2007). Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates Using Aspect Ratio Trapping. MRS Proceedings. 994. 3 indexed citations

16.

Bai, Jie, et al.. (2007). Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping. Applied Physics Letters. 90(5). 144 indexed citations

17.

Park, Ji‐Soo, M. Curtin, Jie Bai, M. Carroll, & Anthony Lochtefeld. (2006). Growth of Ge Thick Layers on Si(001) Substrates Using Reduced Pressure Chemical Vapor Deposition. Japanese Journal of Applied Physics. 45(11R). 8581–8581. 18 indexed citations

18.

Lee, Sanghyun, et al.. (2006). Strain Degradation in Strained-Si Layers Far Thicker than the Critical Thickness Grown on Relaxed Si_0.65Ge_0.35 Layers. ECS Transactions. 3(7). 411–420. 1 indexed citations

19.

Regan, A., et al.. (2002). The Los Alamos VXI-based modular RF control system. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1154–1156. 7 indexed citations

20.

Regan, A., et al.. (1996). Microwave Process Control Through A Traveling Wave Tube Source. MRS Proceedings. 430. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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