S.L. Rommel

981 total citations
52 papers, 774 citations indexed

About

S.L. Rommel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, S.L. Rommel has authored 52 papers receiving a total of 774 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 31 papers in Atomic and Molecular Physics, and Optics and 15 papers in Biomedical Engineering. Recurrent topics in S.L. Rommel's work include Advancements in Semiconductor Devices and Circuit Design (34 papers), Semiconductor materials and devices (28 papers) and Semiconductor Quantum Structures and Devices (22 papers). S.L. Rommel is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (34 papers), Semiconductor materials and devices (28 papers) and Semiconductor Quantum Structures and Devices (22 papers). S.L. Rommel collaborates with scholars based in United States, United Kingdom and Japan. S.L. Rommel's co-authors include Paul R. Berger, Philip E. Thompson, Roger K. Lake, Gerhard Klimeck, Karl D. Hobart, Alan Seabaugh, J. Kolodzey, Thomas E. Dillon, Sung-Yong Chung and M. W. Dashiell and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

S.L. Rommel

47 papers receiving 734 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S.L. Rommel United States 16 697 403 173 102 28 52 774
M. Fritze United States 14 528 0.8× 387 1.0× 168 1.0× 137 1.3× 64 2.3× 53 798
J. Walker United States 11 543 0.8× 354 0.9× 68 0.4× 93 0.9× 30 1.1× 31 654
Masato Takiguchi Japan 16 532 0.8× 459 1.1× 389 2.2× 110 1.1× 17 0.6× 58 695
Yoshio Noguchi Japan 16 578 0.8× 425 1.1× 71 0.4× 93 0.9× 43 1.5× 66 674
Masiar Sistani Austria 16 496 0.7× 242 0.6× 297 1.7× 157 1.5× 14 0.5× 60 614
Y. C. Kao United States 16 435 0.6× 389 1.0× 124 0.7× 175 1.7× 28 1.0× 51 587
R. Steingrüber Germany 11 442 0.6× 272 0.7× 62 0.4× 131 1.3× 53 1.9× 43 540
H.N. Yu United States 12 1.0k 1.4× 126 0.3× 68 0.4× 159 1.6× 47 1.7× 28 1.0k
Y. Ono Japan 16 807 1.2× 503 1.2× 126 0.7× 133 1.3× 32 1.1× 46 944
K.R. Hofmann Germany 17 931 1.3× 315 0.8× 95 0.5× 253 2.5× 25 0.9× 64 1.0k

Countries citing papers authored by S.L. Rommel

Since Specialization
Citations

This map shows the geographic impact of S.L. Rommel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.L. Rommel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.L. Rommel more than expected).

Fields of papers citing papers by S.L. Rommel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.L. Rommel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.L. Rommel. The network helps show where S.L. Rommel may publish in the future.

Co-authorship network of co-authors of S.L. Rommel

This figure shows the co-authorship network connecting the top 25 collaborators of S.L. Rommel. A scholar is included among the top collaborators of S.L. Rommel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.L. Rommel. S.L. Rommel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gaur, Abhinav, et al.. (2015). Surface treatments to reduce leakage current in In0.53Ga0.47As p-i-n diodes. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(2). 2 indexed citations
2.
Manuel, Pascal, Juan Salvador Rojas-Ramírez, Ravi Droopad, et al.. (2015). Integration of broken-gap heterojunction InAs/GaSb Esaki tunnel diodes on silicon. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(6). 13 indexed citations
3.
Romanczyk, Brian, Paul M. Thomas, S.L. Rommel, et al.. (2012). Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm<sup>2</sup> peak current density to enhance TFET drive current. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 27.1.1–27.1.3. 26 indexed citations
4.
Kurinec, Santosh, Michael A. Jackson, Davide Mariotti, et al.. (2010). Microelectronic engineering education for emerging technologies. T3J–1. 2 indexed citations
5.
6.
Romanczyk, Brian, Eugene Freeman, Paul M. Thomas, et al.. (2009). Sub-micron Esaki Tunnel Diode fabrication and characterization. 1–2. 2 indexed citations
7.
Sieg, Stuart, et al.. (2008). Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique. Electronics Letters. 44(15). 930–932. 6 indexed citations
8.
Kurinec, Santosh, Bruce W. Smith, Karl D. Hirschman, et al.. (2006). 25 Years of Microelectronic Engineering Education. 23–31. 4 indexed citations
9.
Chung, Sung-Yong, Niu Jin, Paul R. Berger, et al.. (2004). Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration. Journal of Applied Physics. 84. 2688–2690. 6 indexed citations
10.
Rommel, S.L., Karl D. Hirschman, Santosh Kurinec, et al.. (2004). Challenges in integration of Resonant Interband Tunnel Devices with CMOS. 275–278. 4 indexed citations
11.
Jin, Niu, Sung-Yong Chung, Paul R. Berger, et al.. (2004). Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes. Materials Science in Semiconductor Processing. 8(1-3). 411–416.
12.
Rommel, S.L., et al.. (2002). Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(4). 1327–1330. 46 indexed citations
13.
Rommel, S.L., Niu Jin, Thomas E. Dillon, et al.. (2002). Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications. 159–160. 2 indexed citations
14.
Rivas, Cristian, Roger K. Lake, Gerhard Klimeck, et al.. (2001). Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts. Applied Physics Letters. 78(6). 814–816. 54 indexed citations
15.
Hobart, Karl D., Philip E. Thompson, S.L. Rommel, et al.. (2001). “p-on-n” Si interband tunnel diode grown by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(1). 290–293. 12 indexed citations
16.
Dashiell, M. W., S.L. Rommel, Thomas Adam, et al.. (2000). Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing. IEEE Transactions on Electron Devices. 47(9). 1707–1714. 48 indexed citations
17.
Rommel, S.L., Thomas E. Dillon, Paul R. Berger, et al.. (1999). Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities. IEEE Electron Device Letters. 20(7). 329–331. 23 indexed citations
18.
Rommel, S.L., et al.. (1998). 1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes. Applied Physics Letters. 72(15). 1860–1862. 16 indexed citations
19.
Rommel, S.L., et al.. (1997). A p-Ge C /n-Si Heterojunction Diode Grown by Molecular Beam Epitaxy. IEEE Transactions on Electron Devices. 18(9).
20.
Rommel, S.L., et al.. (1997). Low resistance ohmic contacts to p-Ge/sub 1-x/Cx on Si. IEEE Electron Device Letters. 18(1). 7–9. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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