S.L. Rommel

981 citations

52 papers · 774 indexed · h-index 16

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
Electrical and Electronic Engineering top 5%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Photonic and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Lasers and Optical Devices

Papers in ⓘ

Electrical and Electronic Engineering 47
- Advancements in Semiconductor Devices and Circuit Design 34
- Semiconductor materials and devices 28
- Photonic and Optical Devices 11
- Integrated Circuits and Semiconductor Failure Analysis 11
Atomic and Molecular Physics, and Optics 31
- Semiconductor Quantum Structures and Devices 22
- Semiconductor materials and interfaces 8

Co-authors: Paul R. Berger (30 shared papers)Philip E. Thompson (23 shared papers)Roger K. Lake (12 shared papers)Karl D. Hobart (8 shared papers)Gerhard Klimeck (5 shared papers)Alan Seabaugh (6 shared papers)J. Kolodzey (6 shared papers)Sung-Yong Chung (6 shared papers)
Journals: Applied Physics Letters (8 papers)IEEE Transactions on Electron Devices (5 papers)IEEE Electron Device Letters (4 papers)Electronics Letters (3 papers)Journal of Applied Physics (3 papers)
Partner nations: United States United Kingdom Japan

In The Last Decade

S.L. Rommel

47 papers receiving 734 citations

Peers

Countries citing papers authored by S.L. Rommel

Since Specialization

Citations

This map shows the geographic impact of S.L. Rommel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.L. Rommel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.L. Rommel more than expected).

Fields of papers citing papers by S.L. Rommel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.L. Rommel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.L. Rommel. The network helps show where S.L. Rommel may publish in the future.

Co-authors

The 25 scholars most cited alongside S.L. Rommel, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.L. Rommel Line = papers co-authored together S.L. Rommel links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 52 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters ·S.L. Rommel, Thomas E. Dillon, M. W. Dashiell, Huina Feng, J. Kolodzey, Paul R. Berger, Philip E. Thompson, Karl D. Hobart, Roger K. Lake, Alan Seabaugh, Gerhard Klimeck, D. K. Blanks	1998	82
2	Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope Applied Physics Letters ·Jae‐Hyung Jang, Weifeng Zhao, Joonho Bae, D. Selvanathan, S.L. Rommel, I. Adesida, A.N. Lepore, Martin Kwakernaak, J.H. Abeles	2003	55
3	Tri-State Logic Using Vertically Integrated Si–SiGe Resonant Interband Tunneling Diodes With Double NDR IEEE Electron Device Letters ·Ni Jin, Sung-Yong Chung, R.M. Heyns, Paul R. Berger, Rong Yu, Philip E. Thompson, S.L. Rommel	2004	55
4	Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts Applied Physics Letters ·Cristian Rivas, Roger K. Lake, Gerhard Klimeck, William R. Frensley, Massimo V. Fischetti, Philip E. Thompson, S.L. Rommel, Paul R. Berger	2001	54
5	Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing IEEE Transactions on Electron Devices ·M. W. Dashiell, R. T. Troeger, S.L. Rommel, Thomas Adam, Paul R. Berger, C. Guedj, J. Kolodzey, Alan Seabaugh, Roger K. Lake	2000	48
6	Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S.L. Rommel, Jae‐Hyung Jang, Wu Lu, G. Cueva, Ling Zhou, I. Adesida, Gary Pajer, R.D. Whaley, A.N. Lepore, Zane Schellanbarger, J.H. Abeles	2002	46
7	Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation Solid-State Electronics ·S. Sudirgo, R.P. Nandgaonkar, B. Curanovic, Jeremiah Hebding, Robert Saxer, S.S. Islam, Karl D. Hirschman, S.L. Rommel, Santosh Kurinec, Philip E. Thompson, Ni Jin, Paul R. Berger	2004	40
8	Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions IEEE Transactions on Electron Devices ·Niu Jin, Sung-Yong Chung, Anthony T. Rice, Paul R. Berger, Philip E. Thompson, Cristian Rivas, Roger K. Lake, S. Sudirgo, J.J. Kempisty, B. Curanovic, S.L. Rommel, Karl D. Hirschman, Santosh Kurinec, P. Chi, David S. Simons	2003	37
9	Full band modeling of the excess current in a delta-doped silicon tunnel diode Journal of Applied Physics ·Cristian Rivas, Roger K. Lake, William R. Frensley, Gerhard Klimeck, Philip E. Thompson, Karl D. Hobart, S.L. Rommel, Paul R. Berger	2003	28
10	Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration Applied Physics Letters ·Sung-Yong Chung, Niu Jin, Paul R. Berger, Ronghua Yu, Philip E. Thompson, Roger K. Lake, S.L. Rommel, Santosh K. Kurinec	2004	28
11	Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm<sup>2</sup> peak current density to enhance TFET drive current Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·D. Pawlik, Brian Romanczyk, Paul M. Thomas, S.L. Rommel, M. Edirisooriya, R. Contreras‐Guerrero, Ravi Droopad, W.b. Loh, Man Hoi Wong, Kausik Majumdar, W.-E Wang, P. D. Kirsch, R. Jammy	2012	26
12	Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy Applied Physics Letters ·Philip E. Thompson, Karl D. Hobart, M. E. Twigg, Glenn G. Jernigan, Thomas E. Dillon, S.L. Rommel, Paul R. Berger, David S. Simons, Peter Hammer, Roger K. Lake, Alan Seabaugh	1999	26
13	Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities IEEE Electron Device Letters ·S.L. Rommel, Thomas E. Dillon, Paul R. Berger, Philip E. Thompson, Karl D. Hobart, Roger K. Lake, Alan Seabaugh	1999	23
14	Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing Applied Physics Letters ·Woo-Suhl Cho, Mathieu Luisier, D. K. Mohata, Suman Datta, D. Pawlik, S.L. Rommel, Gerhard Klimeck	2012	22
15	Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes Applied Physics Letters ·Brian Romanczyk, Paul M. Thomas, D. Pawlik, S.L. Rommel, W.Y. Loh, Man Hoi Wong, Kausik Majumdar, W.-E. Wang, P. D. Kirsch	2013	19
16	1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes Applied Physics Letters ·Xiaoping Shao, S.L. Rommel, B. A. Orner, Huina Feng, M. W. Dashiell, R. T. Troeger, J. Kolodzey, Paul R. Berger, Thomas Laursen	1998	16
17	Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping S.L. Rommel, D. Pawlik, Paul M. Thomas, Michael Barth, Kelsey E. Johnson, Santosh Kurinec, Alan Seabaugh, Zhiyuan Cheng, J. Z. Li, J.S. Park, Jennifer M. Hydrick, Jie Bai, M. Carroll, J.G. Fiorenza, Anthony Lochtefeld	2008	14
18	Integration of broken-gap heterojunction InAs/GaSb Esaki tunnel diodes on silicon Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Kunal Bhatnagar, Pascal Manuel, Juan Salvador Rojas-Ramírez, Ravi Droopad, Paul M. Thomas, Abhinav Gaur, Matthew J. Filmer, S.L. Rommel	2015	13
19	“p-on-n” Si interband tunnel diode grown by molecular beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Karl D. Hobart, Philip E. Thompson, S.L. Rommel, Thomas E. Dillon, Paul R. Berger, David S. Simons, P. H.	2001	12
20	Mapping Defect Density in MBE Grown <inline-formula> <tex-math notation="TeX">${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ </tex-math></inline-formula> Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics IEEE Transactions on Electron Devices ·Kausik Majumdar, Paul M. Thomas, Wei-Yip Loh, Pui-Yee Hung, Ken Matthews, D. Pawlik, Brian Romanczyk, Matthew J. Filmer, Abhinav Gaur, Ravi Droopad, S.L. Rommel, Chris Hobbs, Paul Kirsch	2014	11

About S.L. Rommel

S.L. Rommel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Media Technology and Computational Theory and Mathematics, having authored 52 papers that have together received 774 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (34 papers), Semiconductor materials and devices (28 papers), Semiconductor Quantum Structures and Devices (22 papers), Photonic and Optical Devices (11 papers), Integrated Circuits and Semiconductor Failure Analysis (11 papers), Nanowire Synthesis and Applications (10 papers), Semiconductor materials and interfaces (8 papers) and Experimental Learning in Engineering (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (403 citations), Electrical and Electronic Engineering (697 citations), Surfaces, Coatings and Films (28 citations), Biomedical Engineering (173 citations) and Materials Chemistry (102 citations). S.L. Rommel has collaborated with scholars based in United States, United Kingdom and Japan. Frequent co-authors include Paul R. Berger, Philip E. Thompson, Roger K. Lake, Karl D. Hobart, Gerhard Klimeck, Alan Seabaugh, J. Kolodzey, Sung-Yong Chung, Thomas E. Dillon and M. W. Dashiell. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Electronics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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