H. Mathieu

5.0k total citations · 1 hit paper
135 papers, 4.1k citations indexed

About

H. Mathieu is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, H. Mathieu has authored 135 papers receiving a total of 4.1k indexed citations (citations by other indexed papers that have themselves been cited), including 108 papers in Atomic and Molecular Physics, and Optics, 60 papers in Electrical and Electronic Engineering and 42 papers in Materials Chemistry. Recurrent topics in H. Mathieu's work include Semiconductor Quantum Structures and Devices (95 papers), Quantum and electron transport phenomena (40 papers) and GaN-based semiconductor devices and materials (31 papers). H. Mathieu is often cited by papers focused on Semiconductor Quantum Structures and Devices (95 papers), Quantum and electron transport phenomena (40 papers) and GaN-based semiconductor devices and materials (31 papers). H. Mathieu collaborates with scholars based in France, United States and United Kingdom. H. Mathieu's co-authors include J. Camassel, Pierre Lefèbvre, J. Pascual, Philippe Christol, P. Merle, J. Allègre, D. Auvergne, Bernard Gil, J. Massies and N. Grandjean and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

H. Mathieu

131 papers receiving 4.0k citations

Hit Papers

Fine structure in the intrinsic absorption edge of TiO2 1978 2026 1994 2010 1978 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Mathieu France 35 2.5k 2.1k 2.0k 967 536 135 4.1k
Bo E. Sernelius Sweden 31 2.2k 0.9× 2.1k 1.0× 2.6k 1.3× 794 0.8× 823 1.5× 150 4.7k
J. Pollmann Germany 44 3.4k 1.4× 3.1k 1.5× 4.1k 2.0× 987 1.0× 1.1k 2.0× 168 6.9k
E. E. Chaban United States 25 1.9k 0.8× 1.6k 0.8× 1.4k 0.7× 569 0.6× 833 1.6× 48 3.6k
Elias Burstein United States 7 1.7k 0.7× 3.1k 1.5× 3.3k 1.7× 538 0.6× 946 1.8× 18 5.1k
A. Franciosi Italy 37 3.3k 1.3× 2.9k 1.4× 2.1k 1.0× 975 1.0× 544 1.0× 241 5.2k
Fumio Komori Japan 31 2.4k 1.0× 1.0k 0.5× 2.3k 1.1× 826 0.9× 453 0.8× 263 4.2k
H. P. Hughes United Kingdom 33 1.6k 0.6× 1.7k 0.8× 2.2k 1.1× 421 0.4× 813 1.5× 124 3.7k
R. F. C. Farrow United States 43 4.2k 1.7× 2.1k 1.0× 2.3k 1.2× 1.2k 1.2× 2.5k 4.7× 160 6.2k
Wenyao Liang United Kingdom 31 1.3k 0.5× 1.5k 0.7× 1.6k 0.8× 1.6k 1.7× 1.2k 2.3× 147 4.0k
G. Harbeke United States 32 1.3k 0.5× 2.0k 1.0× 2.2k 1.1× 397 0.4× 717 1.3× 70 3.7k

Countries citing papers authored by H. Mathieu

Since Specialization
Citations

This map shows the geographic impact of H. Mathieu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Mathieu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Mathieu more than expected).

Fields of papers citing papers by H. Mathieu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Mathieu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Mathieu. The network helps show where H. Mathieu may publish in the future.

Co-authorship network of co-authors of H. Mathieu

This figure shows the co-authorship network connecting the top 25 collaborators of H. Mathieu. A scholar is included among the top collaborators of H. Mathieu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Mathieu. H. Mathieu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gallart, Mathieu, Pierre Lefèbvre, A. Morel, et al.. (2001). Reduction of Carrier In-Plane Mobility in Group-III Nitride Based Quantum Wells: The Role of Internal Electric Fields. physica status solidi (a). 183(1). 61–66. 14 indexed citations
2.
Gallart, Mathieu, T. Taliercio, Pierre Lefèbvre, et al.. (2000). Time-Resolved Spectroscopy of MBE-Grown Nitride Based Heterostructures. physica status solidi (a). 178(1). 101–105. 2 indexed citations
3.
Lefèbvre, Pierre, Bernard Gil, J. Allègre, et al.. (1999). Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 375–380. 5 indexed citations
4.
Lefèbvre, Pierre, Tristan Richard, J. Allègre, et al.. (1994). Sol-gel preparation and optical characterization of sodium borosilicate glasses doped with II-VI semiconductor nanocrystals. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2288. 163–163. 1 indexed citations
5.
Allègre, J., et al.. (1994). Absorption properties of CdS nanocrystals in glasses; evidence of both weak and strong confinement regimes. Journal of Crystal Growth. 138(1-4). 998–1003. 33 indexed citations
6.
Lefèbvre, Pierre, Philippe Christol, & H. Mathieu. (1993). General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality. Journal de Physique IV (Proceedings). 3(C5). 377–380. 2 indexed citations
7.
Lefèbvre, Pierre, et al.. (1990). Electronic structure of (1 1 3)-grown GaAs-(GaAl)As single quantum wells under biaxial strain fields. Solid State Communications. 75(8). 677–682. 12 indexed citations
8.
Allègre, J., Bernard Gil, Joaquín Calatayud, & H. Mathieu. (1990). Deformation potentials of CdTe epilayers from piezo and wavelength modulation reflectivity spectra analysis. Journal of Crystal Growth. 101(1-4). 603–607. 13 indexed citations
9.
Gil, B., D. J. Dunstan, Joaquín Calatayud, H. Mathieu, & J. P. Faurie. (1989). Electronic structure of cadmium-telluridezinc-telluride strained-layer superlattices under pressure. Physical review. B, Condensed matter. 40(8). 5522–5528. 35 indexed citations
10.
Mathieu, H., et al.. (1988). Band offsets and lattice-mismatch effects in strained-layer CdTe/ZnTe superlattices. Physical review. B, Condensed matter. 38(11). 7740–7748. 62 indexed citations
11.
Lefèbvre, Pierre, B. Gil, & H. Mathieu. (1987). Effect of hydrostatic pressure on GaAs-Ga1xAlxAs microstructures. Physical review. B, Condensed matter. 35(11). 5630–5634. 58 indexed citations
12.
Gil, Bernard, et al.. (1987). Localization behavior of donor-related complexes in InP under hydrostatic pressure. Physical review. B, Condensed matter. 36(2). 1090–1093. 1 indexed citations
13.
Gil, Bernard, et al.. (1986). Theoretical investigation of the magnetodonors in a narrow gap semiconductor under high pressure conditions. Solid State Communications. 59(11). 777–780. 1 indexed citations
14.
Mathieu, H.. (1984). Reliability. Meccanica. 19(S1). 57–60. 1 indexed citations
15.
Mathieu, H., et al.. (1984). Stress effects on excitons bound to neutral acceptors in InP. Physical review. B, Condensed matter. 29(6). 3438–3448. 23 indexed citations
16.
Gil, Bernard, J. Camassel, P. Merle, & H. Mathieu. (1982). JJcoupling and local-field effects on N-N pair spectra in GaP. Physical review. B, Condensed matter. 25(6). 3987–4001. 34 indexed citations
17.
Pascual, J., J. Camassel, P. Merle, & H. Mathieu. (1980). Uniaxial-stress dependence of the first-order Raman spectrum of rutile. II. Model calculation. Physical review. B, Condensed matter. 21(6). 2439–2447. 11 indexed citations
18.
Camassel, J., et al.. (1980). Deformation potentials of the fundamental exciton spectrum of InP. Physical review. B, Condensed matter. 22(4). 2020–2024. 20 indexed citations
19.
Auvergne, D., P. Merle, & H. Mathieu. (1977). Band structure enhancement of indirect transitions. Solid State Communications. 21(5). 437–439. 18 indexed citations
20.
Auvergne, D., et al.. (1975). Composition dependence of fundamental edge in Ga1−xAlxSb alloys. Solid State Communications. 17(4). 511–514. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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