J. Frandon

2.4k total citations
76 papers, 1.8k citations indexed

About

J. Frandon is a scholar working on Condensed Matter Physics, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Frandon has authored 76 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Condensed Matter Physics, 32 papers in Materials Chemistry and 28 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Frandon's work include GaN-based semiconductor devices and materials (53 papers), Acoustic Wave Resonator Technologies (27 papers) and Semiconductor Quantum Structures and Devices (23 papers). J. Frandon is often cited by papers focused on GaN-based semiconductor devices and materials (53 papers), Acoustic Wave Resonator Technologies (27 papers) and Semiconductor Quantum Structures and Devices (23 papers). J. Frandon collaborates with scholars based in France, United Kingdom and Portugal. J. Frandon's co-authors include F. Demangeot, M. A. Renucci, O. Briot, J. Gleize, R.L. Aulombard, B. Daudin, Bernard Gil, N. Grandjean, J. Massies and C. Pinquier and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. Frandon

76 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Frandon France 24 1.3k 779 592 557 519 76 1.8k
R.L. Aulombard France 20 786 0.6× 724 0.9× 651 1.1× 294 0.5× 387 0.7× 108 1.5k
O. Briot France 29 2.3k 1.8× 1.3k 1.7× 1.1k 1.9× 622 1.1× 1.1k 2.1× 153 2.9k
T. G. Andersson Sweden 20 678 0.5× 514 0.7× 1.2k 1.9× 239 0.4× 457 0.9× 118 1.9k
F. Demangeot France 23 1.2k 0.9× 833 1.1× 456 0.8× 587 1.1× 519 1.0× 68 1.7k
M. A. Renucci France 23 976 0.8× 798 1.0× 701 1.2× 488 0.9× 441 0.8× 71 1.7k
R. P. Seĭsyan Russia 11 854 0.7× 480 0.6× 957 1.6× 525 0.9× 631 1.2× 75 1.7k
S. J. Rosner United States 21 1.1k 0.9× 658 0.8× 1.2k 2.0× 417 0.7× 461 0.9× 54 2.2k
T. D. Moustakas United States 21 1.6k 1.3× 1.1k 1.4× 613 1.0× 320 0.6× 841 1.6× 74 2.2k
Haruo Sunakawa Japan 17 2.0k 1.5× 1.1k 1.4× 769 1.3× 277 0.5× 858 1.7× 36 2.3k
E. Iliopoulos Greece 27 1.5k 1.2× 819 1.1× 530 0.9× 420 0.8× 823 1.6× 86 1.9k

Countries citing papers authored by J. Frandon

Since Specialization
Citations

This map shows the geographic impact of J. Frandon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Frandon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Frandon more than expected).

Fields of papers citing papers by J. Frandon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Frandon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Frandon. The network helps show where J. Frandon may publish in the future.

Co-authorship network of co-authors of J. Frandon

This figure shows the co-authorship network connecting the top 25 collaborators of J. Frandon. A scholar is included among the top collaborators of J. Frandon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Frandon. J. Frandon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Briot, O., B. Maleyre, S. Ruffenach, et al.. (2004). Absorption and Raman scattering processes in InN films and dots. Journal of Crystal Growth. 269(1). 22–28. 35 indexed citations
2.
Correia, M. R., S. Pereira, E. Pereira, et al.. (2004). Optical studies on the red luminescence of InGaN epilayers. Superlattices and Microstructures. 36(4-6). 625–632. 7 indexed citations
3.
Frandon, J., M. A. Renucci, E. Bellet‐Amalric, Christoph Adelmann, & B. Daudin. (2003). Lattice dynamics of a strained GaN–AlN quantum well structure. Physica E Low-dimensional Systems and Nanostructures. 17. 557–558. 2 indexed citations
4.
Gleize, J., M. A. Renucci, J. Frandon, E. Bellet‐Amalric, & B. Daudin. (2003). Phonon deformation potentials of wurtzite AlN. Journal of Applied Physics. 93(4). 2065–2068. 86 indexed citations
5.
Demangeot, F., J. Gleize, J. Frandon, et al.. (2002). Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching. Journal of Applied Physics. 91(10). 6520–6523. 28 indexed citations
6.
Demangeot, F., J. Frandon, M. A. Renucci, B. Beaumont, & P. Gibart. (2002). Phonon dispersion in gallium nitride. 10. 97–100. 1 indexed citations
7.
Correia, M. R., S. Pereira, J. Frandon, et al.. (2002). Analysis of Strain Depth Variations in an In 0.19 Ga 0.81 N Layer by Raman Spectroscopy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 563–567. 6 indexed citations
8.
Correia, M. R., S. Pereira, E. Pereira, et al.. (2001). Indium Distribution within InxGa1?xN Epitaxial Layers: A Combined Resonant Raman Scattering and Rutherford Backscattering Study. physica status solidi (b). 228(1). 173–177. 2 indexed citations
9.
Gleize, J., F. Demangeot, J. Frandon, et al.. (2000). Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures. Thin Solid Films. 364(1-2). 156–160. 6 indexed citations
10.
Gleize, J., F. Demangeot, J. Frandon, et al.. (1999). Phonons in a strained hexagonal GaN–AlN superlattice. Applied Physics Letters. 74(5). 703–705. 67 indexed citations
11.
Demangeot, F., J. Frandon, M. A. Renucci, et al.. (1999). Far UV resonant Raman scattering in hexagonal Ga1−xAlxN alloys. Solid State Communications. 109(8). 519–523. 17 indexed citations
12.
Kuball, Martin, F. Demangeot, J. Frandon, et al.. (1998). Thermal Stability of GaN Investigated by Raman Scattering. MRS Proceedings. 537. 1 indexed citations
13.
Demangeot, F., J. Groenen, J. Frandon, et al.. (1997). Raman study of Ga1−xAlxN solid solutions. MRS Internet Journal of Nitride Semiconductor Research. 2. 20 indexed citations
14.
Frandon, J., et al.. (1993). Confinement and strain effects on phonons in a ZnSe-ZnTe superlattice. Superlattices and Microstructures. 14(1). 71–71. 5 indexed citations
15.
Bacquet, G., et al.. (1991). Observation of the type I–type II crossover in GaAs/AlAs short-period superlattices by optical spin orientation. Journal of Applied Physics. 69(4). 2532–2535. 3 indexed citations
16.
Bacquet, G., et al.. (1990). Optical Orientation in GaAs Grown on Si. physica status solidi (a). 119(2). K181–K183. 2 indexed citations
17.
Frandon, J., et al.. (1990). Optical pumping of GaAs grown on Si. Solid State Communications. 73(7). 491–493. 3 indexed citations
18.
Bacquet, G., et al.. (1989). Optical pumping study of Mn-doped GaAs epilayers. Solid State Communications. 71(9). 717–719. 2 indexed citations
19.
Bacquet, G., et al.. (1989). Caractérisation par pompage optique d'un super réseau à courte période GaAs/AlAs. Revue de Physique Appliquée. 24(3). 337–342. 3 indexed citations
20.
Frandon, J., et al.. (1975). Electron energy loss spectra in Mg2Sn and Mg2Ge. physica status solidi (b). 69(2). 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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