M. Hansen

591 total citations
14 papers, 408 citations indexed

About

M. Hansen is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. Hansen has authored 14 papers receiving a total of 408 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Condensed Matter Physics, 9 papers in Atomic and Molecular Physics, and Optics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. Hansen's work include GaN-based semiconductor devices and materials (14 papers), Semiconductor Quantum Structures and Devices (8 papers) and Ga2O3 and related materials (6 papers). M. Hansen is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Semiconductor Quantum Structures and Devices (8 papers) and Ga2O3 and related materials (6 papers). M. Hansen collaborates with scholars based in United States. M. Hansen's co-authors include Steven P. DenBaars, James S. Speck, Umesh K. Mishra, Steven A. Ringel, A. Hierro, A. Abare, L.A. Coldren, S. H. Lim, P. Morgan Pattison and Lingyan Zhao and has published in prestigious journals such as Applied Physics Letters, Journal of Crystal Growth and IEEE Journal of Selected Topics in Quantum Electronics.

In The Last Decade

M. Hansen

12 papers receiving 398 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Hansen United States 10 372 207 159 145 116 14 408
Hiroya Kimura Japan 5 429 1.2× 164 0.8× 135 0.8× 232 1.6× 209 1.8× 6 459
D. A. Stocker United States 8 359 1.0× 160 0.8× 103 0.6× 169 1.2× 191 1.6× 11 393
Y. Dikme Germany 12 383 1.0× 200 1.0× 142 0.9× 170 1.2× 146 1.3× 44 431
Yen-Sheng Lin Taiwan 7 358 1.0× 116 0.6× 179 1.1× 156 1.1× 229 2.0× 9 425
P. Drechsel Germany 9 366 1.0× 156 0.8× 176 1.1× 137 0.9× 140 1.2× 14 387
G. Zhao United States 13 268 0.7× 251 1.2× 151 0.9× 189 1.3× 209 1.8× 30 453
J. Limb United States 15 515 1.4× 298 1.4× 175 1.1× 249 1.7× 134 1.2× 23 561
C.H. Liu Taiwan 9 272 0.7× 171 0.8× 109 0.7× 128 0.9× 160 1.4× 11 350
Yung-Chen Cheng Taiwan 7 389 1.0× 114 0.6× 203 1.3× 174 1.2× 225 1.9× 17 460
B. Monemar Sweden 10 385 1.0× 154 0.7× 172 1.1× 220 1.5× 249 2.1× 27 494

Countries citing papers authored by M. Hansen

Since Specialization
Citations

This map shows the geographic impact of M. Hansen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Hansen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Hansen more than expected).

Fields of papers citing papers by M. Hansen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Hansen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Hansen. The network helps show where M. Hansen may publish in the future.

Co-authorship network of co-authors of M. Hansen

This figure shows the co-authorship network connecting the top 25 collaborators of M. Hansen. A scholar is included among the top collaborators of M. Hansen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Hansen. M. Hansen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Abare, A., M. Hansen, James S. Speck, L. A. Coldren, & Steven P. DenBaars. (2003). Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings. 198–199.
2.
Hansen, M., Joachim Piprek, P. Morgan Pattison, et al.. (2002). Higher efficiency InGaN laser diodes with an improved quantum well capping configuration. Applied Physics Letters. 81(22). 4275–4277. 49 indexed citations
3.
Hierro, A., Aaron R. Arehart, B. Heying, et al.. (2002). Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters. 80(5). 805–807. 53 indexed citations
4.
Hansen, M., et al.. (2002). Mg-rich precipitates in the p-type doping of InGaN-based laser diodes. Applied Physics Letters. 80(14). 2469–2471. 45 indexed citations
5.
Haberer, Elaine D., M. Hansen, S. Keller, et al.. (2001). Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(3). 603–608. 11 indexed citations
6.
Hansen, M., P. Fini, Lingyan Zhao, et al.. (2000). Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire. Applied Physics Letters. 76(5). 529–531. 54 indexed citations
7.
Hierro, A., Daewon Kwon, S. A. Ringel, et al.. (2000). Deep levels in n-type Schottky and p+-n homojunction GaN diodes. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 922–928.
8.
Hierro, A., Steven A. Ringel, M. Hansen, et al.. (2000). Hydrogen passivation of deep levels in n–GaN. Applied Physics Letters. 77(10). 1499–1501. 112 indexed citations
9.
Kwon, Yong‐Hwan, G. H. Gainer, S. Bidnyk, et al.. (1999). Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions. Applied Physics Letters. 75(17). 2545–2547. 31 indexed citations
10.
Hierro, A., Daewon Kwon, S. A. Ringel, et al.. (1999). Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes. MRS Proceedings. 595. 1 indexed citations
11.
Hansen, M., A. Abare, P. Kozodoy, et al.. (1999). Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes. physica status solidi (a). 176(1). 59–62. 10 indexed citations
12.
Abare, A., M. Mack, M. Hansen, et al.. (1998). Measurement of gain current relations for InGaN multiple quantum wells. Applied Physics Letters. 73(26). 3887–3889. 8 indexed citations
13.
Abare, A., M. Mack, M. Hansen, et al.. (1998). Cleaved and etched facet nitride laser diodes. IEEE Journal of Selected Topics in Quantum Electronics. 4(3). 505–509. 13 indexed citations
14.
Mack, M., A. Abare, M. Hansen, et al.. (1998). Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD. Journal of Crystal Growth. 189-190. 837–840. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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