G. Nowak

1.6k total citations
67 papers, 1.3k citations indexed

About

G. Nowak is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, G. Nowak has authored 67 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Condensed Matter Physics, 31 papers in Electrical and Electronic Engineering and 25 papers in Mechanics of Materials. Recurrent topics in G. Nowak's work include GaN-based semiconductor devices and materials (50 papers), Metal and Thin Film Mechanics (25 papers) and Semiconductor materials and devices (21 papers). G. Nowak is often cited by papers focused on GaN-based semiconductor devices and materials (50 papers), Metal and Thin Film Mechanics (25 papers) and Semiconductor materials and devices (21 papers). G. Nowak collaborates with scholars based in Poland, United States and Germany. G. Nowak's co-authors include I. Grzegory, S. Porowski, J.L. Weyher, Michał Boćkowski, B. Łucznik, M. Leszczyński, J. Łagowski, Stanisław Krukowski, G. Kamler and P. Perlin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Analytical Biochemistry.

In The Last Decade

G. Nowak

66 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Nowak Poland 20 852 607 543 410 329 67 1.3k
Tsung‐Shine Ko Taiwan 24 806 0.9× 917 1.5× 516 1.0× 531 1.3× 318 1.0× 81 1.5k
Zhijue Quan China 19 859 1.0× 433 0.7× 553 1.0× 311 0.8× 410 1.2× 56 1.2k
S. Ruffenach France 19 729 0.9× 508 0.8× 282 0.5× 400 1.0× 492 1.5× 71 1.0k
J. Brault France 27 1.4k 1.6× 1000 1.6× 1.1k 2.0× 738 1.8× 1.1k 3.2× 138 2.4k
M. Pophristić United States 20 738 0.9× 379 0.6× 607 1.1× 401 1.0× 276 0.8× 60 1.2k
Zhixin Qin China 20 1.2k 1.5× 720 1.2× 397 0.7× 793 1.9× 254 0.8× 87 1.5k
Anirban Bhattacharyya United States 20 610 0.7× 493 0.8× 413 0.8× 456 1.1× 325 1.0× 79 1.1k
Tom Zimmermann United States 16 689 0.8× 246 0.4× 566 1.0× 399 1.0× 195 0.6× 41 953
Alexei Bykhovski United States 22 1.4k 1.6× 526 0.9× 701 1.3× 666 1.6× 575 1.7× 52 1.7k
M. Schirra Germany 16 298 0.3× 582 1.0× 354 0.7× 390 1.0× 119 0.4× 31 830

Countries citing papers authored by G. Nowak

Since Specialization
Citations

This map shows the geographic impact of G. Nowak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Nowak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Nowak more than expected).

Fields of papers citing papers by G. Nowak

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Nowak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Nowak. The network helps show where G. Nowak may publish in the future.

Co-authorship network of co-authors of G. Nowak

This figure shows the co-authorship network connecting the top 25 collaborators of G. Nowak. A scholar is included among the top collaborators of G. Nowak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Nowak. G. Nowak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kamińska, E., Julita Smalc‐Koziorowska, Szymon Grzanka, et al.. (2024). Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode. Materials. 17(18). 4520–4520. 1 indexed citations
2.
Weyher, J.L., et al.. (2023). Extended Defects in SiC: Selective Etching and Raman Study. Journal of Electronic Materials. 52(8). 5039–5046. 3 indexed citations
3.
Weyher, J.L., et al.. (2022). Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching. The Journal of Physical Chemistry C. 126(2). 1115–1124. 25 indexed citations
4.
Strąk, Paweł, Paweł Kempisty, Jacek Piechota, et al.. (2021). Al coverage of AlN(0001) surface and Al vapor pressure – Thermodynamic assessment based on ab initio calculations. Computational Materials Science. 203. 111159–111159. 1 indexed citations
5.
Weyher, J.L., Bartosz Bartosewicz, Igor Dzięcielewski, et al.. (2018). Relationship between the nano-structure of GaN surfaces and SERS efficiency: Chasing hot-spots. Applied Surface Science. 466. 554–561. 45 indexed citations
6.
Weyher, J.L., et al.. (2012). GaN-based platforms with Au-Ag alloyed metal layer for surface enhanced Raman scattering. Journal of Applied Physics. 112(11). 14 indexed citations
7.
Wróbel, Piotr, Tomasz Stefaniuk, Tomasz J. Antosiewicz, et al.. (2012). Fabrication of corrugated Ge-doped silica fibers. Optics Express. 20(13). 14508–14508. 1 indexed citations
8.
Leszczyński, M., I. Grzegory, Michał Boćkowski, et al.. (2008). Secrets of GaN substrates properties for high luminousity of InGaN quantum wells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6910. 69100G–69100G. 1 indexed citations
9.
Weyher, J.L., G. Kamler, G. Nowak, et al.. (2005). Defects in GaN single crystals and homoepitaxial structures. Journal of Crystal Growth. 281(1). 135–142. 22 indexed citations
10.
Skierbiszewski, C., K. Dybko, W. Knap, et al.. (2005). High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy. Applied Physics Letters. 86(10). 50 indexed citations
11.
Prystawko, P., R. Czernecki, M. Leszczyński, et al.. (2002). Blue-Laser Structures Grown on Bulk GaN Crystals. physica status solidi (a). 192(2). 320–324. 9 indexed citations
12.
Nowak, G., Xinhui Xia, J. J. Kelly, J.L. Weyher, & S. Porowski. (2001). Electrochemical etching of highly conductive GaN single crystals. Journal of Crystal Growth. 222(4). 735–740. 44 indexed citations
13.
Nowak, G., K. Pakuła, I. Grzegory, J.L. Weyher, & S. Porowski. (1999). Dislocation Structure of Growth Hillocks in Homoepitaxial GaN. physica status solidi (b). 216(1). 649–654. 15 indexed citations
14.
Grzegory, I., Michał Boćkowski, B. Łucznik, et al.. (1997). GaN Crystals: Growth and Doping Under Pressure. MRS Proceedings. 482. 18 indexed citations
15.
Nowak, G., Stanisław Krukowski, I. Grzegory, et al.. (1996). Surface morphology of as grown and annealed bulk GaN crystals. MRS Internet Journal of Nitride Semiconductor Research. 1. 10 indexed citations
16.
Ostapenko, S., et al.. (1995). Photoluminescence Defect Diagnostics in Poly-Si Thin Films. Materials science forum. 196-201. 1897–1902. 6 indexed citations
17.
Nowak, G. & Krystian Kaletha. (1992). Purification and properties of AMP-deaminase from human kidney. Biochemical Medicine and Metabolic Biology. 47(3). 232–241. 9 indexed citations
18.
Nowak, G. & Krystian Kaletha. (1991). Molecular forms of human heart muscle AMP deaminase. Biochemical Medicine and Metabolic Biology. 46(2). 263–266. 4 indexed citations
19.
Nowak, G., et al.. (1991). Purification and properties of AMP-deaminase from human uterine smooth muscle. Biochimica et Biophysica Acta (BBA) - General Subjects. 1073(3). 470–473. 19 indexed citations
20.
Staszczak, Magdalena & G. Nowak. (1984). Proteinase pattern in Trametes versicolor in response to carbon and nitrogen starvation.. PubMed. 31(4). 431–7. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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