Yoshiharu Anda

650 citations

27 papers · 563 indexed · h-index 12

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 20
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 5
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 16
- Silicon Carbide Semiconductor Technologies 12
- Radio Frequency Integrated Circuit Design 4
- Advancements in Semiconductor Devices and Circuit Design 3
Materials Chemistry
- Diamond and Carbon-based Materials Research 2
Renewable Energy, Sustainability and the Environment
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 2

Co-authors: Tetsuzo Ueda Masahiro Ishida Daisuke Ueda Satoshi Tamura Tsuyoshi Tanaka Tatsuo Morita Yasuhiro Uemoto Satoshi Nakazawa
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Japanese Journal of Applied Physics (10 papers)IEEE Transactions on Electron Devices (2 papers)IEICE Transactions on Electronics (1 paper)
Partner nations: Japan United States Italy

In The Last Decade

Yoshiharu Anda

27 papers receiving 542 citations

Peers

Countries citing papers authored by Yoshiharu Anda

Since Specialization

Citations

This map shows the geographic impact of Yoshiharu Anda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshiharu Anda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshiharu Anda more than expected).

Fields of papers citing papers by Yoshiharu Anda

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshiharu Anda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshiharu Anda. The network helps show where Yoshiharu Anda may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Yoshiharu Anda, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yoshiharu Anda Line = papers co-authored together Yoshiharu Anda links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Effects of post-deposition annealing in O ₂ on threshold voltage of Al ₂ O ₃ /AlGaN/GaN MOS heterojunction field-effect transistors Japanese Journal of Applied Physics ·Satoshi Nakazawa,Ashna Shanmughan,S. H. Kim,Yoshiharu Anda,Natela Vacnadze,Tetsuzo Ueda,Tsunenobu Kimoto,Tamotsu Hashizume	2019	10
2	SiO₂/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors Japanese Journal of Applied Physics ·K. Watanabe,Laura P. Ford,Mikito Nozaki,Takahiro Yamada,Satoshi Nakazawa,Masahiro Ishida,Yoshiharu Anda,Tetsuzo Ueda,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe	2018	9
3	Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties Japanese Journal of Applied Physics ·Mikito Nozaki,K. Watanabe,Takahiro Yamada,Ashna Shanmughan,Satoshi Nakazawa,Yoshiharu Anda,Tetsuzo Ueda,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe	2018	24
4	A1W power consumption GaN-based isolated gate driver for a 1.0 MHz GaN power system Song‐Bek Che,Hwang Oeju,Noboru Negoro,C Dell’Orto Elisa,Osamu Tabata,Joe Brazil,Yoshiharu Anda,Natela Vacnadze	2017	2
5	Fast switching performance by 20 A / 730 V AlGaN/GaN MIS-HFET using AlON gate insulator Satoru Nakazawa,Trong Nhan Pham Nguyen,S. H. Kim,Yoshiharu Anda,Tetsuo Hatsuda,Tetsuzo Ueda,Mikito Nozaki,Takahiro Yamada,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe,Tamotsu Hashizume	2017	8
6	High-efficiency thin and compact concentrator photovoltaics using micro-solar cells with via-holes sandwiched between thin lens-array and circuit board Japanese Journal of Applied Physics ·Chen BaoRu,Tetsuya Asano,R. Stinn,Fujing Wan,Akio Matsushita,P. J. S. Whitmore,David Cochran,Kazuo Inoue,Masaki Yamamoto,Eiji Fujii,Tohru Nakagawa,Yoshiharu Anda,Hidetoshi Ishida,Tetsuzo Ueda,Onur Fidaner,Emilia Sánchez Romero,Daisuke Ueda	2014	16
7	A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array IEEE Journal of Photovoltaics ·Fujing Wan,Akio Matsushita,Chen BaoRu,Tetsuya Asano,P. J. S. Whitmore,R. Stinn,David Cochran,Kazuo Inoue,Tohru Nakagawa,Masaki Yamamoto,Eiji Fujii,Yoshiharu Anda,Hidetoshi Ishida,Tetsuzo Ueda,Onur Fidaner,Emilia Sánchez Romero,Daisuke Ueda	2014	23
8	200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates Japanese Journal of Applied Physics ·Satoshi Nakazawa,S. H. Kim,Carlota D. Salter,Yoshiharu Anda,Masahiro Ishida,Tetsuzo Ueda,Tsuyoshi Tanaka	2012	5
9	200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates Japanese Journal of Applied Physics ·Satoshi Nakazawa,S. H. Kim,Carlota D. Salter,Yoshiharu Anda,Masahiro Ishida,Tetsuzo Ueda,Tsuyoshi Tanaka	2012	2
10	GaN Gate Injection Transistor with integrated Si Schottky barrier diode for highly efficient DC-DC converters Tatsuo Morita,D Alexandre,Hidekazu Umeda,Yusuke Kinoshita,Satoshi Tamura,Yoshiharu Anda,Tetsuzo Ueda,Tsuyoshi Tanaka	2012	30
11	High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors IEEE Transactions on Electron Devices ·Hidekazu Umeda,Toshiyuki Takizawa,Yoshiharu Anda,Tetsuzo Ueda,Tsuyoshi Tanaka	2012	23
12	K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W IEICE Transactions on Electronics ·N COWLAM,Masayuki Kuroda,Sangeetha P. Sumithran,Carlota D. Salter,Yoshiharu Anda,Hiroyuki Sakai,Tetsuzo Ueda,Tsuyoshi Tanaka	2012	5
13	99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors Tatsuo Morita,Satoshi Tamura,Yoshiharu Anda,Masahiro Ishida,Yasuhiro Uemoto,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	2011	131
14	Recent Advances in GaN Power Switching Devices Satoshi Tamura,Yoshiharu Anda,Masahiro Ishida,Yasuhiro Uemoto,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	2010	27
15	Thermally Stable Isolation of AlGaN/GaN Transistors by Using Fe Ion Implantation Hidekazu Umeda,Toshiyuki Takizawa,Yoshiharu Anda,Tetsuzo Ueda,Takahiro Tanaka	2010	3
16	Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates Hidekazu Umeda,Kto Cox,Yoshiharu Anda,Masahiro Ishida,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda	2010	42
17	A low-impedance coplanar waveguide using an SrTiO/sub 3/ thin film for GaAs power MMIC's IEEE Transactions on Microwave Theory and Techniques ·M. Tanabe,Y. H. Jeong,Yoshiharu Anda,Larisa A. Koval	2000	11
18	Novel fabrication technique for 0.1 μm T-shaped gate with i-line negative resist and poly(methylmethacrylate) Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Yoshiharu Anda,S. Bhattacharya,DENISEE A. DE A. ZOCCHE,Catalina Vidal Olate,Manabu Yanagihara,Colin S. Gray,Kaoru Inoue,Nobumitsu Hirose,Toshiaki Matsui	1999	2
19	Hall Effect Measurement and Band Bending Calculation of Hydrogenated Diamond Film Grown by Chemical Vapor Deposition Japanese Journal of Applied Physics ·Michel Auberger,Yoshiharu Anda,Tetsuro Maki,Takeshi Kobayashi	1997	6
20	Quantum Analysis of Hole Distribution in Multiple-Delta-Doped Diamond with a Deep Impurity Level Japanese Journal of Applied Physics ·Yoshiharu Anda,Denison Melo de Aguiar,Takeshi Kobayashi	1995	7

About Yoshiharu Anda

Yoshiharu Anda is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 27 papers that have together received 563 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and devices (16 papers), Silicon Carbide Semiconductor Technologies (12 papers), Ga2O3 and related materials (5 papers), Radio Frequency Integrated Circuit Design (4 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers), Semiconductor Quantum Structures and Devices (2 papers) and Diamond and Carbon-based Materials Research (2 papers). The work is most often cited by research in Condensed Matter Physics (376 citations), Electronic, Optical and Magnetic Materials (208 citations) and Electrical and Electronic Engineering (486 citations). Yoshiharu Anda has collaborated with scholars based in Japan, United States and Italy. Frequent co-authors include Tetsuzo Ueda, Masahiro Ishida, Daisuke Ueda, Satoshi Tamura, Tsuyoshi Tanaka, Tatsuo Morita, Yasuhiro Uemoto, Tsuyoshi Tanaka, Satoshi Nakazawa and Hidekazu Umeda. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, IEICE Transactions on Electronics, IEEE Journal of Photovoltaics and Applied Physics Letters.

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