Yoshiharu Anda

650 total citations
27 papers, 563 citations indexed

About

Yoshiharu Anda is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yoshiharu Anda has authored 27 papers receiving a total of 563 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 20 papers in Condensed Matter Physics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yoshiharu Anda's work include GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and devices (16 papers) and Silicon Carbide Semiconductor Technologies (12 papers). Yoshiharu Anda is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and devices (16 papers) and Silicon Carbide Semiconductor Technologies (12 papers). Yoshiharu Anda collaborates with scholars based in Japan, United States and Italy. Yoshiharu Anda's co-authors include Tetsuzo Ueda, Masahiro Ishida, Daisuke Ueda, Satoshi Tamura, Tsuyoshi Tanaka, Tatsuo Morita, Yasuhiro Uemoto, Tsuyoshi Tanaka, Satoshi Nakazawa and Hidekazu Umeda and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Yoshiharu Anda

27 papers receiving 542 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yoshiharu Anda Japan 12 486 376 208 102 46 27 563
Satoshi Nakazawa Japan 11 356 0.7× 257 0.7× 210 1.0× 78 0.8× 49 1.1× 24 436
Idriss Abid France 8 388 0.8× 484 1.3× 201 1.0× 132 1.3× 112 2.4× 11 554
Zhizhe Wang China 12 295 0.6× 153 0.4× 123 0.6× 127 1.2× 50 1.1× 59 416
Marcello Cioni Italy 8 423 0.9× 473 1.3× 151 0.7× 90 0.9× 155 3.4× 27 553
J. D. Blevins United States 13 271 0.6× 184 0.5× 201 1.0× 246 2.4× 21 0.5× 17 471
Catherine Langpoklakpam Taiwan 7 185 0.4× 112 0.3× 117 0.6× 122 1.2× 33 0.7× 16 307
Jinwan Kim South Korea 11 134 0.3× 308 0.8× 162 0.8× 145 1.4× 58 1.3× 15 361
Matthew Porter United States 10 275 0.6× 207 0.6× 197 0.9× 139 1.4× 48 1.0× 29 430
J. Stemmer Germany 11 189 0.4× 315 0.8× 200 1.0× 132 1.3× 86 1.9× 25 396

Countries citing papers authored by Yoshiharu Anda

Since Specialization
Citations

This map shows the geographic impact of Yoshiharu Anda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshiharu Anda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshiharu Anda more than expected).

Fields of papers citing papers by Yoshiharu Anda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshiharu Anda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshiharu Anda. The network helps show where Yoshiharu Anda may publish in the future.

Co-authorship network of co-authors of Yoshiharu Anda

This figure shows the co-authorship network connecting the top 25 collaborators of Yoshiharu Anda. A scholar is included among the top collaborators of Yoshiharu Anda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yoshiharu Anda. Yoshiharu Anda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nakazawa, Satoshi, et al.. (2019). Effects of post-deposition annealing in O 2 on threshold voltage of Al 2 O 3 /AlGaN/GaN MOS heterojunction field-effect transistors. Japanese Journal of Applied Physics. 58(3). 30902–30902. 10 indexed citations
2.
Watanabe, K., Mikito Nozaki, Takahiro Yamada, et al.. (2018). SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors. Japanese Journal of Applied Physics. 57(6S3). 06KA03–06KA03. 9 indexed citations
3.
Nozaki, Mikito, K. Watanabe, Takahiro Yamada, et al.. (2018). Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties. Japanese Journal of Applied Physics. 57(6S3). 06KA02–06KA02. 24 indexed citations
4.
Yamada, Takahiro, K. Watanabe, Mikito Nozaki, et al.. (2018). Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment. Japanese Journal of Applied Physics. 57(6S3). 06KA07–06KA07. 6 indexed citations
5.
Che, Song‐Bek, et al.. (2017). A1W power consumption GaN-based isolated gate driver for a 1.0 MHz GaN power system. 33–36. 2 indexed citations
6.
Nakazawa, Satoshi, et al.. (2017). Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth. Japanese Journal of Applied Physics. 56(9). 91003–91003. 13 indexed citations
7.
Yamada, Takahiro, K. Watanabe, Mikito Nozaki, et al.. (2017). Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient. Journal of Applied Physics. 121(3). 82 indexed citations
8.
Asano, Tetsuya, Akio Matsushita, Kazuo Inoue, et al.. (2014). High-efficiency thin and compact concentrator photovoltaics using micro-solar cells with via-holes sandwiched between thin lens-array and circuit board. Japanese Journal of Applied Physics. 53(4S). 04ER01–04ER01. 16 indexed citations
9.
Matsushita, Akio, Tetsuya Asano, Kazuo Inoue, et al.. (2014). A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array. IEEE Journal of Photovoltaics. 4(2). 709–712. 23 indexed citations
10.
Nakazawa, Satoshi, et al.. (2012). 200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates. Japanese Journal of Applied Physics. 51(8R). 81801–81801. 5 indexed citations
11.
Umeda, Hidekazu, Toshiyuki Takizawa, Yoshiharu Anda, Tetsuzo Ueda, & Tsuyoshi Tanaka. (2012). High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors. IEEE Transactions on Electron Devices. 60(2). 771–775. 23 indexed citations
12.
Kuroda, Masayuki, et al.. (2012). K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W. IEICE Transactions on Electronics. E95.C(8). 1327–1331. 5 indexed citations
13.
Morita, Tatsuo, Satoshi Tamura, Yoshiharu Anda, et al.. (2011). 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors. 481–484. 131 indexed citations
14.
Nakazawa, Satoru, M. Nishijima, Yoshiharu Anda, et al.. (2011). High-Power and High-Gain S-band AlGaN/GaN HFETs with Source Field Plates on Si Substrate. 4 indexed citations
15.
Tamura, Satoshi, Yoshiharu Anda, Masahiro Ishida, et al.. (2010). Recent Advances in GaN Power Switching Devices. 27 indexed citations
16.
Umeda, Hidekazu, Toshiyuki Takizawa, Yoshiharu Anda, Tetsuzo Ueda, & Takahiro Tanaka. (2010). Thermally Stable Isolation of AlGaN/GaN Transistors by Using Fe Ion Implantation. 3 indexed citations
17.
Tanabe, M., et al.. (2000). A low-impedance coplanar waveguide using an SrTiO/sub 3/ thin film for GaAs power MMIC's. IEEE Transactions on Microwave Theory and Techniques. 48(5). 872–874. 11 indexed citations
18.
Anda, Yoshiharu, et al.. (1999). Novel fabrication technique for 0.1 μm T-shaped gate with i-line negative resist and poly(methylmethacrylate). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(2). 320–322. 2 indexed citations
19.
Anda, Yoshiharu, et al.. (1997). Hall Effect Measurement and Band Bending Calculation of Hydrogenated Diamond Film Grown by Chemical Vapor Deposition. Japanese Journal of Applied Physics. 36(6R). 3414–3414. 6 indexed citations
20.
Anda, Yoshiharu, et al.. (1995). Quantum Analysis of Hole Distribution in Multiple-Delta-Doped Diamond with a Deep Impurity Level. Japanese Journal of Applied Physics. 34(8R). 3987–3987. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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