S. Prussin

811 citations

28 papers · 623 indexed · h-index 8

Impact in

Automotive Engineering top 5%
- Advanced Battery Technologies Research
Electrical and Electronic Engineering top 10%
- Silicon and Solar Cell Technologies
- Advancements in Battery Materials
- Semiconductor materials and devices
- Advanced Battery Materials and Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies

Papers in

Electrical and Electronic Engineering 24
- Silicon and Solar Cell Technologies 15
- Integrated Circuits and Semiconductor Failure Analysis 14
- Semiconductor materials and devices 10
- Advancements in Semiconductor Devices and Circuit Design 7
- Thin-Film Transistor Technologies 3
Atomic and Molecular Physics, and Optics 9
- Semiconductor materials and interfaces 9

Co-authors: Roland W. Scholz Fang‐Lin Chao J.C.S. Woo K. N. Tu G. Z. Pan K. S. Jones Shu Qin W. G. Spitzer
Journals: Applied Physics Letters (3 papers)Journal of The Electrochemical Society (3 papers)IEEE Transactions on Plasma Science (2 papers)Journal of Applied Physics (2 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (1 paper)
Partner nations: United States Germany Italy

In The Last Decade

S. Prussin

25 papers receiving 565 citations

Peers

Countries citing papers authored by S. Prussin

Since Specialization

Citations

This map shows the geographic impact of S. Prussin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Prussin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Prussin more than expected).

Fields of papers citing papers by S. Prussin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Prussin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Prussin. The network helps show where S. Prussin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Prussin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Prussin Line = papers co-authored together S. Prussin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High mobility Ge-channel formation by localized/selective liquid phase epitaxy (LPE) using Ge+B plasma ion implantation and laser melt annealing John Borland, Shu Qin, Paul Heron, Karim Huet, Preetam Sahani, María Vilera, Gary Goodman, A. Wan, Steven W. Novak, Thomas M. Murray, R. J. Matyi, Abhijeet Joshi, S. Prussin	2013	1
2	Effects of implant temperature and millisecond annealing on dopant activation and diffusion AIP conference proceedings ·E. J. H. Collart, Naomi OHNUKI, Katsuya Takahira, S. McCoy, P. J. Timans, Abhijeet Joshi, S. Prussin	2012	3
3	Study of Damage Engineering—Quantitative Scatter Defect Measurements of Ultralow Energy Implantation Doping Using the Continuous Anodic Oxidation Technique/Differential Hall Effect IEEE Transactions on Plasma Science ·Shu Qin, L Cornea Razvan, Yongjun Hu, S. Prussin, FERNANDA MOURA FERREIRA	2012	1
4	A Comparative Study Of Dopant Activation And Deactivation In Arsenic and Phosphorus Implanted Silicon AIP conference proceedings ·Shu Qin, L Cornea Razvan, S. N. Zagoulaev, S. Prussin, FERNANDA MOURA FERREIRA, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki	2011	1
5	Scatter Defects and Hall Scattering Factor For The Mobility of Boron In Silicon AIP conference proceedings ·S. Prussin, FERNANDA MOURA FERREIRA, Shu Qin, L Cornea Razvan, S. N. Zagoulaev, 陈化日, Suresh Babu, Tsutomu Nagayama, Jerry Heikal, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki	2011	1
6	Carrier activation in cluster boron implanted Si Hiroshi Onoda, Suresh Babu, Tsutomu Nagayama, Jerry Heikal, John Martin Reservoir, R.H.G. Jongman, I. Alcantud Gonz lez, N. V. Getmanskii, Masahiro Hashimoto, 友成治夫, Nancy Rocem, Kazuto Kawakami, FERNANDA MOURA FERREIRA, S. Prussin	2010	2
7	The Application of the Continuous Anodic Oxidation Technique for the Evaluation of State-of-the-Art Front-End Structures AIP conference proceedings ·S. Prussin, Shu Qin, FERNANDA MOURA FERREIRA, L Cornea Razvan, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yulashika Perera	2008	6
8	The Continuous Anodic Oxidation Technique AIP conference proceedings ·S. Prussin, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M. Secula	2007	4
9	Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator Applied Physics Letters ·Fang‐Lin Chao, S. Prussin, J.C.S. Woo, Roland W. Scholz	2005	50
10	Dopant Activation in bulk germanium and Germanium-on-Insulator MRS Proceedings ·Fang‐Lin Chao, S. Prussin, J.C.S. Woo, Roland W. Scholz	2004	0
11	Characteristics of Boron and Arsenic Ultra-Shallow Junction Using Laser Annealing with Pre-Amorphization Implantation Wafa Ahmed Al-Rawahi, K. Min, G. Cone, S. Prussin, Minfang Han, J.C.S. Woo	2000	2
12	Characterization of ultra-shallow junctions with tapered groove profilometry and other techniques S. Prussin, Sławek J., Daniel F. Downey, C. W. Shearer, C. M. Osburn	1998	1
13	Microstructural evolution of {113} rodlike defects and {111} dislocation loops in silicon-implanted silicon Applied Physics Letters ·G. Z. Pan, K. N. Tu, S. Prussin	1997	15
14	Size distribution of end-of-range dislocation loops in silicon-implanted silicon Applied Physics Letters ·G. Z. Pan, K. N. Tu, S. Prussin	1996	14
15	The effect of implant species on defect anneal kinetics part I: Silicon and phosphorus implantation Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·S. Prussin, K. S. Jones	1987	8
16	The Growth Mechanism of Dislocation Loops in Arsenic Implanted Silicon Materials science forum ·K. S. Jones, S. Prussin, Eicke R. Weber	1986	2
17	Junction Depth Measurement for VLSI Structures Journal of The Electrochemical Society ·S. Prussin	1983	2
18	Model for MOS Field-Time-Dependent Breakdown Reliability physics ·Bejamin Mine, S. Prussin, J. Maserjian	1978	6
19	Adaption of Ion Implantation for Integrated Circuits Journal of The Electrochemical Society ·S. Prussin, Hang Yun-ping	1975	8
20	A New Method for Single Atom Specimen Preparation Proceedings annual meeting Electron Microscopy Society of America ·E Conde, Robert M. Glaeser, S. Prussin	1975	1

About S. Prussin

S. Prussin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Biomedical Engineering and Materials Chemistry, having authored 28 papers that have together received 623 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (15 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers), Semiconductor materials and devices (10 papers), Semiconductor materials and interfaces (9 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Advanced Surface Polishing Techniques (4 papers), Silicon Nanostructures and Photoluminescence (3 papers) and Thin-Film Transistor Technologies (3 papers). The work is most often cited by research in Automotive Engineering (147 citations), Electrical and Electronic Engineering (487 citations), Atomic and Molecular Physics, and Optics (209 citations), Materials Chemistry (162 citations) and Metals and Alloys (8 citations). S. Prussin has collaborated with scholars based in United States, Germany and Italy. Frequent co-authors include Roland W. Scholz, Fang‐Lin Chao, J.C.S. Woo, K. N. Tu, G. Z. Pan, K. S. Jones, Shu Qin, W. G. Spitzer, L.L. Liou and J. Maserjian. Their work appears in journals such as Applied Physics Letters, Journal of The Electrochemical Society, IEEE Transactions on Plasma Science, Journal of Applied Physics and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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