F. Aniel

1.7k total citations
107 papers, 1.2k citations indexed

About

F. Aniel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, F. Aniel has authored 107 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 103 papers in Electrical and Electronic Engineering, 43 papers in Atomic and Molecular Physics, and Optics and 13 papers in Biomedical Engineering. Recurrent topics in F. Aniel's work include Advancements in Semiconductor Devices and Circuit Design (64 papers), Semiconductor materials and devices (47 papers) and Radio Frequency Integrated Circuit Design (39 papers). F. Aniel is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (64 papers), Semiconductor materials and devices (47 papers) and Radio Frequency Integrated Circuit Design (39 papers). F. Aniel collaborates with scholars based in France, Germany and Mexico. F. Aniel's co-authors include G. Fishman, N. Zerounian, Soline Boyer‐Richard, Nicolas Cavassilas, R. Adde, P. Crozat, P. Boucaud, P. Chevalier, A. Chantre and T. Hackbarth and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Aniel

103 papers receiving 1.2k citations

Peers

Countries citing papers authored by F. Aniel

Since Specialization

Citations

This map shows the geographic impact of F. Aniel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Aniel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Aniel more than expected).

Fields of papers citing papers by F. Aniel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Aniel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Aniel. The network helps show where F. Aniel may publish in the future.

Co-authorship network of co-authors of F. Aniel

This figure shows the co-authorship network connecting the top 25 collaborators of F. Aniel. A scholar is included among the top collaborators of F. Aniel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Aniel. F. Aniel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Conductor-backed coplanar waveguide on BCB with thin metal layers and via holes 2019 ·(unknown), N. Zerounian, (unknown), P. Crozat, (unknown), (unknown), David Bouville, Frédéric Hamouda, F. Aniel	1
2	Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating 2015 ·Journal of Infrared Millimeter and Terahertz Waves ·(unknown), (unknown), N. Zerounian, (unknown), Lei Cao, François Boone, Hassan Maher, Y. Cordier, F. Aniel	13
3	Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors 2014 ·Semiconductor Science and Technology ·(unknown), N. Zerounian, F. Aniel, (unknown), (unknown), (unknown), (unknown), (unknown)	1
4	Intrinsic transit times and noise transport time study of Si/SiGe:C Heterejunction bipolar transistors 2012 ·European Microwave Integrated Circuit Conference ·(unknown), F. Aniel, (unknown), N. Zerounian	2
5	Parasitic electrostatic capacitance of high-speed SiGe Heterojunction Bipolar Transistors 2009 ·Solid-State Electronics ·N. Zerounian, F. Aniel, (unknown), P. Chevalier, A. Chantre	9
6	Monte Carlo-Based Analytical Models for Electron and Hole Electrical Parameters in Strained SiGeC Alloys 2009 ·(unknown), D. Rideau, F. Aniel, C. Tavernier, H. Jaouen	4
7	Complex permittivity characterization of benzocyclobutene for terahertz applications 2008 ·Microelectronic Engineering ·Etienne Perret, N. Zerounian, Sylvain David, F. Aniel	67
8	High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges 2007 ·HAL (Le Centre pour la Communication Scientifique Directe) ·P. Chevalier, (unknown), (unknown), (unknown), Laurent Rubaldo, (unknown), (unknown), Timothy O. Dickson, N. Zerounian, (unknown), D. Dutartre, (unknown), F. Aniel, G. Dambrine, A. Chantre	26
9	Experimental Study of Metallic Emitter SiGeC HBTs 2006 ·A. Chantre, F. Aniel, N. Zerounian, (unknown), (unknown), (unknown), (unknown), C. Richard, (unknown), P. Chevalier, Laurent Rubaldo, (unknown), (unknown)	3
10	230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications 2005 ·IEEE Journal of Solid-State Circuits ·P. Chevalier, (unknown), Laurent Rubaldo, (unknown), Sébastien Pruvost, R. Beerkens, (unknown), N. Zerounian, (unknown), (unknown), D. Dutartre, D. Céli, (unknown), D. Gloria, F. Aniel, F. Danneville, A. Chantre	49
11	Energy-Band Structure of Strained Indirect Gap Semiconductor: A k . p Method 2002 ·TechConnect Briefs ·F. Aniel, Nicolas Cavassilas, G. Fishman	1
12	High performance 100 nm T-gate strained Si/Si/sub 0.6/Ge/sub 0.4/ n-MODFET 2002 ·F. Aniel, (unknown), (unknown), P. Crozat, R. Adde, (unknown), (unknown), (unknown), B. Raynor	1
13	Sub 100 nm Gate Technologies for Si/SiGe Buried Channel RF Devices 2002 ·(unknown), T. Hackbarth, (unknown), F. Aniel, H. von Känel	1
14	De-embedded ultra-low noise 0.1 µm gate lengthGe/Si _0.4 Ge _0.6 p -MODFET 2001 ·Electronics Letters ·(unknown), F. Aniel, P. Crozat, R. Adde, G. Höck, T. Hackbarth, U. König	3
15	Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition 2000 ·Applied Physics Letters ·T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, Jean–Michel Lourtioz, C. Hernández, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, I. Sagnes	48
16	0.1 µm gate length p -type Ge/Si _0.4 Ge _0.6 MODFET with 135 GHz f _max 2000 ·Electronics Letters ·G. Höck, T. Hackbarth, (unknown), H.-J. Herzog, (unknown), F. Aniel, P. Crozat, R. Adde, E. Kohn, U. König	14
17	Noise Characterization of InP Based Heterojunction Bipolar Transistor at Microwave Frequencies 1998 ·European Solid-State Device Research Conference ·(unknown), F. Aniel, M. Riet, P. Crozat, Guy Vernet, R. Adde	1
18	High Frequency Analysis of InP Transistors versus Temperature 1997 ·European Solid-State Device Research Conference ·F. Aniel, N. Zerounian, (unknown), (unknown), Guy Vernet, P. Crozat, R. Adde, Jean‐Christophe Harmand, (unknown)	1
19	Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP 1996 ·Journal of Applied Physics ·Alain Sylvestre, F. Aniel, P. Boucaud, F. H. Julien, P. Crozat, A. de Lustrac, R. Adde, Yun-Sik Jin, (unknown)	16
20	Cryogenic on-chip high frequency device characterization 1993 ·European Solid-State Device Research Conference ·P. Crozat, (unknown), (unknown), F. Aniel, R. Adde, Guy Vernet	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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