J. A. Schaefer

3.1k total citations
91 papers, 2.7k citations indexed

About

J. A. Schaefer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. A. Schaefer has authored 91 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 42 papers in Atomic and Molecular Physics, and Optics and 36 papers in Materials Chemistry. Recurrent topics in J. A. Schaefer's work include Semiconductor materials and devices (31 papers), Electron and X-Ray Spectroscopy Techniques (24 papers) and GaN-based semiconductor devices and materials (20 papers). J. A. Schaefer is often cited by papers focused on Semiconductor materials and devices (31 papers), Electron and X-Ray Spectroscopy Techniques (24 papers) and GaN-based semiconductor devices and materials (20 papers). J. A. Schaefer collaborates with scholars based in Germany, United States and Switzerland. J. A. Schaefer's co-authors include W. Göpel, G. J. Lapeyre, F. Stefan Tautz, Eli Rotenberg, S. D. Kevan, F. Stucki, Frank Schwierz, J. Anderson, T. Ohta and Han Woong Yeom and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. A. Schaefer

90 papers receiving 2.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. A. Schaefer Germany 27 1.4k 1.3k 1.1k 526 395 91 2.7k
M. Hanbücken France 19 1.7k 1.2× 1.1k 0.8× 1.3k 1.1× 430 0.8× 435 1.1× 44 3.2k
D. Bolmont France 30 2.2k 1.6× 1.6k 1.2× 1.1k 1.0× 733 1.4× 454 1.1× 200 3.3k
Paul F. Fewster United Kingdom 25 1.1k 0.8× 1.1k 0.8× 1.0k 0.9× 167 0.3× 567 1.4× 74 2.2k
C. W. Wilmsen United States 32 1.8k 1.3× 3.0k 2.3× 1.2k 1.1× 383 0.7× 203 0.5× 140 3.6k
G. Gewinner France 30 2.3k 1.7× 748 0.6× 836 0.8× 499 0.9× 377 1.0× 151 2.8k
J. Falta Germany 25 1.1k 0.8× 917 0.7× 1.2k 1.1× 274 0.5× 311 0.8× 185 2.3k
G. D. T. Spiller United Kingdom 9 1.1k 0.8× 877 0.7× 1.2k 1.1× 190 0.4× 398 1.0× 16 2.5k
G.E. Rhead France 28 1.5k 1.1× 750 0.6× 1.1k 1.0× 697 1.3× 243 0.6× 61 2.7k
S. T. Pantelides United States 32 1.1k 0.8× 2.1k 1.6× 2.1k 1.9× 171 0.3× 283 0.7× 72 3.6k
J. Derrien France 33 2.6k 1.8× 1.8k 1.3× 1.1k 1.0× 684 1.3× 180 0.5× 130 3.6k

Countries citing papers authored by J. A. Schaefer

Since Specialization
Citations

This map shows the geographic impact of J. A. Schaefer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. A. Schaefer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. A. Schaefer more than expected).

Fields of papers citing papers by J. A. Schaefer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. A. Schaefer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. A. Schaefer. The network helps show where J. A. Schaefer may publish in the future.

Co-authorship network of co-authors of J. A. Schaefer

This figure shows the co-authorship network connecting the top 25 collaborators of J. A. Schaefer. A scholar is included among the top collaborators of J. A. Schaefer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. A. Schaefer. J. A. Schaefer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Koch, Roland J., Markus Ostler, Florian Speck, et al.. (2016). Robust Phonon-Plasmon Coupling in Quasifreestanding Graphene on Silicon Carbide. Physical Review Letters. 116(10). 106802–106802. 27 indexed citations
2.
Liu, Yonghe, et al.. (2009). Effect of micro-dimple patterns on capillary pull-off force and friction force of silicon surface. Chinese Physics B. 18(1). 231–237. 2 indexed citations
3.
Liu, Yong, et al.. (2009). Sliding Friction of Nanocomposite WC<SUB>1−<I>x</I></SUB>/C Coatings: Transfer Film and Its Influence on Tribology. Journal of Nanoscience and Nanotechnology. 9(6). 3499–3505. 7 indexed citations
4.
Lorenz, Pierre, et al.. (2008). Characterization of GaN‐based lateral polarity heterostructures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1965–1967. 1 indexed citations
5.
Hums, Christoph, A. Dadgar, J. Bläsing, et al.. (2008). MOVPE Growth and Characterization of AlInN FET Structures on Si(111). MRS Proceedings. 1068. 9 indexed citations
6.
Cimalla, V., V. Lebedev, M. Fischer, et al.. (2006). Surface modifications of AlGaN/GaN sensors for water based nano- and picodroplets. 1007–1010. 2 indexed citations
7.
Liu, Shi‐Xia, et al.. (2006). Friction and adhesion in boundary lubrication measured by microtribometers. Tribology International. 39(12). 1674–1681. 10 indexed citations
8.
Eremtchenko, M., et al.. (2006). Surface phonons of clean, hydrogen- and deuterium-terminated Si(001) surfaces. Surface Science. 600(17). 3446–3455. 8 indexed citations
9.
Schaefer, J. A., et al.. (2004). Einfluss der Rauheit auf die mikrotribologischen Eigenschaften von unterschiedlich strukturierten Siliziumoberflächen bedeckt mit selbstorganisierten Monoschichten. Materialwissenschaft und Werkstofftechnik. 35(10-11). 626–631. 2 indexed citations
10.
Krischok, Stefan, Andreas Opitz, Helmut Wurmus, et al.. (2004). Influence of the RF power on the deposition rate and the chemical surface composition of fluorocarbon films prepared in dry etching gas plasma. Surface Science. 566-568. 1229–1233. 23 indexed citations
11.
Romanus, H., V. Cimalla, J. A. Schaefer, et al.. (2000). Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers. Thin Solid Films. 359(2). 146–149. 38 indexed citations
12.
Schaefer, J. A., et al.. (1998). Hydrogen On Semiconductor Surfaces. MRS Proceedings. 513. 3 indexed citations
13.
Tautz, F. Stefan, et al.. (1997). Investigation of modified 3C SiC(100) surfaces by surface-sensitive techniques. Diamond and Related Materials. 6(10). 1353–1357. 12 indexed citations
14.
Hübner, Andreas, et al.. (1997). Production of Atomic Hydrogen and Its Use for the Growth of GaN with Low Carbon Level. physica status solidi (a). 159(1). 133–135. 2 indexed citations
15.
Stietz, F., V. M. Polyakov, Josephine Woll, et al.. (1996). Segregation of In atoms at clean and hydrogen passivated InP(100) surfaces. Applied Surface Science. 104-105. 169–175. 22 indexed citations
16.
Stietz, F., et al.. (1994). High-resolution study of dipole-active vibrations at the Ag(110) (n × 1)O surface. Surface Science. 318(3). L1201–L1205. 15 indexed citations
17.
Schaefer, J. A., et al.. (1990). Etching of GaAs(100) by Activated Hydrogen. Europhysics Letters (EPL). 12(6). 563–568. 24 indexed citations
18.
Nannarone, S., et al.. (1989). Coupled plasmon and phonon excitations in the space-charge layer on GaAs(110) surfaces. Physical review. B, Condensed matter. 39(11). 7653–7658. 53 indexed citations
19.
Broughton, J. Q., J. A. Schaefer, J. C. Bean, & H. H. Farrell. (1986). Chemisorption ofH2O onGexSilx(100)(2×1). Physical review. B, Condensed matter. 33(10). 6841–6845. 10 indexed citations
20.
Schaefer, J. A., F. Stucki, Daniel Frankel, W. Göpel, & G. J. Lapeyre. (1984). Adsorption of H, O, and H2O at Si(100) and Si(111) surfaces in the monolayer range: A combined EELS, LEED, and XPS study. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(3). 359–365. 130 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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