M. Rudan

2.8k citations
159 papers · 2.0k indexed · h-index 27

Impact in

Papers in

    • Advancements in Semiconductor Devices and Circuit Design 74
    • Semiconductor materials and devices 44
    • Silicon Carbide Semiconductor Technologies 22
    • Silicon and Solar Cell Technologies 21
    • Chalcogenide Semiconductor Thin Films 17
    • Thin-Film Transistor Technologies 14
    • Quantum and electron transport phenomena 15

M. Rudan

153 papers receiving 1.9k citations

Peers

M. Rudan
Comparison fields: 5 of 69
  • Electrical and Electronic Engineering 1.6k
  • Atomic and Molecular Physics, and Optics 467
  • Materials Chemistry 507
  • Applied Mathematics 78
  • Nuclear Energy and Engineering 3
Replace H. L. Grubin with:
H. L. Grubin United States
Paolo Lugli Italy
Hans Kosina Austria
S.E. Laux United States
Thomas Mussenbrock Germany
H. M. Gibbs United States
Hsin‐Chu Chen Taiwan
Christoph Jungemann Germany
Yu. V. Gulyaev Russia
M. Rudan relative to H. L. Grubin United States H. L. Grubin's profile →
Citations per field
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Citations per year

Countries citing papers authored by M. Rudan

Since Specialization
Citations

This map shows the geographic impact of M. Rudan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Rudan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Rudan more than expected).

Fields of papers citing papers by M. Rudan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Rudan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Rudan. The network helps show where M. Rudan may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Rudan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Rudan Line = papers co-authored together M. Rudan links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown
#Work
1
Physics of Semiconductor Devices, Second Edition
20185
2
Many-Level Trap-to-Band Transitions in Chalcogenide Memories
20121
3
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires
20071
4
Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness
20071
5
Effects of the low-field mobility in single-gate and double-gate ultrathin-body MOSFETs scaled to the ultimate technology nodes
20062
6
Investigating the performance limits of silicon nanowires and carbon nanotube FETs
20051
7
Two-Particle Wave Function of Electrons Coherently Propagating along Quantum Wires( the IEEE International Coference on SISPAD '02)
20032
8
ESSDERC 2002 : proceedings of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002
20023
9
Device Modelling: Limitations and Perspective for Advanced Technologies
19981
10
Breakdown in the Output Characteristics of Deep Submicron, a-Si:H TFTs
19981
11
Modeling Surface Scattering Effects in the Solution of the BTE based on Spherical Harmonics Expansion
19962
12
Dynamic Behavior of a-Si Devices for Flat-Panel Displays
19961
13
A Dynamic Model of Gold/Platinum Doped Devices
19951
14
AC Analysis of Amorphous-Silicon Structures
19952
15
Three-Dimensional, Electro-Mechanical Simulation of a Silicon Pressure Sensor
19941
16
Performance Analysis of SiGe-Base BJTs
19941
17
Three-Dimensional Simulation of a Narrow-Width MOSFET
19879
18
Physical models for numerical device simulation
198614
19
Modeling of drift-diffusion currents and mobility degradation in IGFET's
19832
20 197816

About M. Rudan

M. Rudan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Bioengineering and Electrochemistry, having authored 159 papers that have together received 2.0k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (74 papers), Semiconductor materials and devices (44 papers), Phase-change materials and chalcogenides (27 papers), Silicon Carbide Semiconductor Technologies (22 papers), Silicon and Solar Cell Technologies (21 papers), Chalcogenide Semiconductor Thin Films (17 papers), Quantum and electron transport phenomena (15 papers) and Thin-Film Transistor Technologies (14 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.6k citations), Atomic and Molecular Physics, and Optics (467 citations), Materials Chemistry (507 citations), Applied Mathematics (78 citations) and Nuclear Energy and Engineering (3 citations). M. Rudan has collaborated with scholars based in Italy, Germany and United States. Frequent co-authors include G. Baccarani, Susanna Reggiani, Elena Gnani, A. Gnudi, Fadwa Odeh, R. Brunetti, Enrico Piccinini, P. Ciampolini, M. Valdinoci and Luigi Colalongo. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Journal of Computational Electronics, Solid-State Electronics and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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