J.P. Chante

701 total citations
61 papers, 479 citations indexed

About

J.P. Chante is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J.P. Chante has authored 61 papers receiving a total of 479 indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in J.P. Chante's work include Silicon Carbide Semiconductor Technologies (44 papers), Semiconductor materials and devices (22 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). J.P. Chante is often cited by papers focused on Silicon Carbide Semiconductor Technologies (44 papers), Semiconductor materials and devices (22 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). J.P. Chante collaborates with scholars based in France, Spain and Russia. J.P. Chante's co-authors include Hervé Morel, M.L. Locatelli, Dominique Bergogne, Dominique Planson, Philippe Godignon, Christophe Raynaud, Hervé Morel, Anis Ammous, Kaiçar Ammous and Marie‐Laure Locatelli and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Power Electronics and IEEE Transactions on Electron Devices.

In The Last Decade

J.P. Chante

55 papers receiving 453 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.P. Chante France	14	461	65	46	46	33	61	479
Jeremy Junghans United States	10	441 1.0×	77 1.2×	93 2.0×	30 0.7×	39 1.2×	21	487
Lorenzo Ceccarelli Denmark	14	448 1.0×	94 1.4×	67 1.5×	29 0.6×	88 2.7×	27	574
F. Frisina Italy	13	416 0.9×	55 0.8×	43 0.9×	15 0.3×	39 1.2×	37	444
Katsuaki Saito Japan	12	373 0.8×	116 1.8×	23 0.5×	40 0.9×	55 1.7×	24	425
K. Hamada Japan	10	170 0.4×	45 0.7×	15 0.3×	79 1.7×	53 1.6×	52	295
Carl W. Chang United States	12	358 0.8×	54 0.8×	22 0.5×	40 0.9×	65 2.0×	25	402
B.P. van Drieënhuizen Netherlands	7	284 0.6×	78 1.2×	27 0.6×	272 5.9×	61 1.8×	13	400
J. Laconte Belgium	8	198 0.4×	58 0.9×	25 0.5×	150 3.3×	63 1.9×	12	276
B.-Y. Mao United States	12	456 1.0×	49 0.8×	6 0.1×	53 1.2×	90 2.7×	28	481
H. Goto Japan	11	222 0.5×	74 1.1×	26 0.6×	142 3.1×	60 1.8×	36	363

Countries citing papers authored by J.P. Chante

Since Specialization

Citations

This map shows the geographic impact of J.P. Chante's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.P. Chante with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.P. Chante more than expected).

Fields of papers citing papers by J.P. Chante

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.P. Chante. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.P. Chante. The network helps show where J.P. Chante may publish in the future.

Co-authorship network of co-authors of J.P. Chante

This figure shows the co-authorship network connecting the top 25 collaborators of J.P. Chante. A scholar is included among the top collaborators of J.P. Chante based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.P. Chante. J.P. Chante is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Bertrand, G., Alexandre Giry, M. Minondo, et al.. (2005). LDMOS modeling for analog and RF circuit design. 469–472. 13 indexed citations

Buttay, Cyril, et al.. (2004). Avalanche Behavior of Low-Voltage Power MOSFETs. HAL (Le Centre pour la Communication Scientifique Directe). 2(3). 104–107. 15 indexed citations

Rousseau, Jean‐Jacques, et al.. (2002). Low power converter for high temperature applications. European Conference on Power Electronics and Applications. 232–236. 1 indexed citations

Lefebvre, Sébastien, F. Forest, & J.P. Chante. (2002). Maximum switching frequency choice for IGBT used in ZCS mode. European Conference on Power Electronics and Applications. 356–361. 5 indexed citations

Morel, Hervé, et al.. (2002). Reusing basic semiconductor region models in power device bond graph definition. 34–39. 5 indexed citations

Planson, Dominique, et al.. (2002). Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications. SPIRE - Sciences Po Institutional REpository. 1. 396–401. 1 indexed citations

Abouchi, Nacer, et al.. (2002). A full-differential analog multiplier using current conveyors. 1. 143–145. 1 indexed citations

Abouchi, Nacer, et al.. (2002). A current conveyor based capacitive multiplier. 1. 146–147. 16 indexed citations

Galy, Philippe, et al.. (2002). ESD evaluation of a low voltage triggering SCR (LVTSCR) device submitted to transmission line pulse (TLP) test. Journal of Electrostatics. 56(3). 281–294. 1 indexed citations

10.

Chante, J.P., et al.. (2002). Study of a 3D phenomenon during ESD stresses in deep submicron CMOS technologies using photon emission tool. 325–332. 12 indexed citations

11.

Morel, Hervé, et al.. (2002). Power electronic circuit simulation using bond graph and Petri network techniques. 27–32. 9 indexed citations

12.

Guillot, G., et al.. (2002). Characterization of deep levels in 6H-SiC pn junction diodes. 525. 19–22. 1 indexed citations

13.

Chante, J.P., et al.. (2002). Silicon carbide power devices. SPIRE - Sciences Po Institutional REpository. 1. 125–134. 5 indexed citations

14.

Ammous, Anis, et al.. (2000). Electrothermal modeling of IGBTs: application to short-circuit conditions. IEEE Transactions on Power Electronics. 15(4). 778–790. 46 indexed citations

15.

Savkina, N.S., A. А. Lebedev, Anatoly M. Strel’chuk, et al.. (2000). Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy. Materials Science and Engineering B. 77(1). 50–54. 36 indexed citations

16.

Raynaud, Christophe, et al.. (1998). Surface effects on current mechanisms in 6H-SiC n+pp+ structures passivated with a deposited oxide. Journal of Applied Physics. 84(3). 1688–1692. 4 indexed citations

17.

Planson, Dominique, et al.. (1997). Periphery protection for silicon carbide devices: state of the art and simulation. Materials Science and Engineering B. 46(1-3). 210–217. 16 indexed citations

18.

Morvan, E., Philippe Godignon, J. Montserrat, et al.. (1997). Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect. Materials Science and Engineering B. 46(1-3). 218–222. 21 indexed citations

19.

Morel, Hervé, et al.. (1991). A novel consistent discretization scheme for the integrated HDM/DDM simulation of semiconductor devices. 759–768.

20.

Bonnaud, O., et al.. (1978). Analysis of weak avalanche multiplication in collector junctions. Avalanche injection measurements on standard transistors like devices. Revue de Physique Appliquée. 13(12). 673–677. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact