I.N. Osiyuk

401 total citations
28 papers, 318 citations indexed

About

I.N. Osiyuk is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, I.N. Osiyuk has authored 28 papers receiving a total of 318 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in I.N. Osiyuk's work include Semiconductor materials and devices (21 papers), Silicon Nanostructures and Photoluminescence (15 papers) and Semiconductor materials and interfaces (11 papers). I.N. Osiyuk is often cited by papers focused on Semiconductor materials and devices (21 papers), Silicon Nanostructures and Photoluminescence (15 papers) and Semiconductor materials and interfaces (11 papers). I.N. Osiyuk collaborates with scholars based in Ukraine, Germany and Sweden. I.N. Osiyuk's co-authors include В. С. Лысенко, A. N. Nazarov, W. Skorupa, Tamara Rudenko, E.Ö. Sveinbjörnsson, T. Gebel, L. Rebohle, Y. V. Gomeniuk, R.A. Yankov and Jiaming Sun and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

I.N. Osiyuk

25 papers receiving 308 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
I.N. Osiyuk Ukraine	10	303	163	101	69	19	28	318
S. T. Chang Taiwan	10	445 1.5×	186 1.1×	119 1.2×	79 1.1×	18 0.9×	20	480
Ganesh Samudra Singapore	15	546 1.8×	165 1.0×	118 1.2×	64 0.9×	18 0.9×	33	567
P. Sana United States	7	309 1.0×	140 0.9×	95 0.9×	50 0.7×	14 0.7×	15	348
J. Penaud Belgium	10	354 1.2×	136 0.8×	157 1.6×	57 0.8×	22 1.2×	31	372
Naoyuki Kawabata Japan	11	375 1.2×	187 1.1×	99 1.0×	77 1.1×	26 1.4×	21	411
R. Kies France	10	317 1.0×	84 0.5×	33 0.3×	44 0.6×	19 1.0×	21	323
Gaurav Thareja United States	11	454 1.5×	121 0.7×	159 1.6×	101 1.5×	14 0.7×	24	466
Yasumitsu Ohta Japan	12	326 1.1×	229 1.4×	110 1.1×	102 1.5×	12 0.6×	22	369
B.J. Cho Singapore	13	525 1.7×	228 1.4×	92 0.9×	98 1.4×	36 1.9×	24	547
S. Brus Belgium	13	469 1.5×	98 0.6×	86 0.9×	56 0.8×	14 0.7×	48	492

Countries citing papers authored by I.N. Osiyuk

Since Specialization

Citations

This map shows the geographic impact of I.N. Osiyuk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I.N. Osiyuk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I.N. Osiyuk more than expected).

Fields of papers citing papers by I.N. Osiyuk

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I.N. Osiyuk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I.N. Osiyuk. The network helps show where I.N. Osiyuk may publish in the future.

Co-authorship network of co-authors of I.N. Osiyuk

This figure shows the co-authorship network connecting the top 25 collaborators of I.N. Osiyuk. A scholar is included among the top collaborators of I.N. Osiyuk based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I.N. Osiyuk. I.N. Osiyuk is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Prucnal, Sławomir, et al.. (2008). Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices. Applied Physics B. 91(1). 123–126. 8 indexed citations

Prucnal, Sławomir, et al.. (2007). Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layers. Applied Physics B. 88(2). 241–244. 7 indexed citations

Rudenko, Tamara, et al.. (2005). Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC. Solid-State Electronics. 49(4). 545–553. 69 indexed citations

Nazarov, A. N., Jiaming Sun, W. Skorupa, et al.. (2005). Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals. Applied Physics Letters. 86(15). 51 indexed citations

Skorupa, W., Sławomir Prucnal, L. Rebohle, et al.. (2005). Rare Earth Ion Implantation for Silicon Based Light Emission. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 108-109. 755–760. 9 indexed citations

Nazarov, A. N., et al.. (2005). Comparative Study of Charge Trapping in High-Dose Si and Ge-Implanted Al/SiO[sub 2]/Si Structures. Journal of The Electrochemical Society. 152(2). F20–F20. 4 indexed citations

Skorupa, W., T. Dekorsy, T. Gebel, et al.. (2003). Ion Beam Processing for Silicon - Based Light Emission. MRS Proceedings. 792. 1 indexed citations

Nazarov, A. N., T. Gebel, L. Rebohle, et al.. (2003). Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection. Journal of Applied Physics. 94(7). 4440–4448. 27 indexed citations

Gebel, T., et al.. (2003). Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters. Physica E Low-dimensional Systems and Nanostructures. 16(3-4). 499–504. 10 indexed citations

10.

Nazarov, A. N., I.N. Osiyuk, В. С. Лысенко, et al.. (2002). Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection. Microelectronics Reliability. 42(9-11). 1461–1464. 4 indexed citations

11.

Sveinbjörnsson, E.Ö., et al.. (2002). New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures. Materials science forum. 389-393. 1001–1004. 9 indexed citations

12.

Ólafsson, Halldór, et al.. (2001). Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique. Applied Physics Letters. 79(24). 4034–4036. 16 indexed citations

13.

Лысенко, В. С., et al.. (2000). Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors. Microelectronics Reliability. 40(4-5). 799–802. 11 indexed citations

14.

Лысенко, В. С., et al.. (1999). Electrical characterization of the amorphous SiC-pSi structure. Microelectronic Engineering. 48(1-4). 265–268. 1 indexed citations

15.

Лысенко, В. С., et al.. (1998). Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction. Journal of Physics D Applied Physics. 31(13). 1499–1503. 3 indexed citations

16.

Gomeniuk, Y. V., et al.. (1992). Current stochasticity of field emission of charge from traps in the transition layer of implanted MIS structures. Applied Surface Science. 59(2). 91–94. 4 indexed citations

17.

Gomeniuk, Y. V., et al.. (1992). Thermally stimulated field emission of charge from traps in the transition layer of SiSiO2 structures. Applied Surface Science. 55(2-3). 179–185. 10 indexed citations

18.

Лысенко, В. С., et al.. (1989). Transformation of SiSiO2Al structures under RF-plasma treatment. Applied Surface Science. 39(1-4). 388–391. 1 indexed citations

19.

Лысенко, В. С., et al.. (1986). Interrelation between surface states and transition layer defects in Si-SiO2 structures. Solid State Communications. 57(3). 171–174. 12 indexed citations

20.

Лысенко, В. С., et al.. (1985). Flash-lamp annealing of SiSiO2 transition layer defects. physica status solidi (a). 87(2). K175–K180.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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