I.N. Osiyuk

401 citations

28 papers · 318 indexed · h-index 10

Co-authors: В. С. Лысенко A. N. Nazarov W. Skorupa Tamara Rudenko E.Ö. Sveinbjörnsson T. Gebel L. Rebohle Y. V. Gomeniuk
Topics: Semiconductor materials and devices (21 papers)Silicon Nanostructures and Photoluminescence (15 papers)Semiconductor materials and interfaces (11 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: Ukraine Germany Sweden

In The Last Decade

I.N. Osiyuk

25 papers receiving 308 citations

Peers

Countries citing papers authored by I.N. Osiyuk

Since Specialization

Citations

This map shows the geographic impact of I.N. Osiyuk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I.N. Osiyuk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I.N. Osiyuk more than expected).

Fields of papers citing papers by I.N. Osiyuk

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I.N. Osiyuk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I.N. Osiyuk. The network helps show where I.N. Osiyuk may publish in the future.

Co-authorship network of co-authors of I.N. Osiyuk

This figure shows the co-authorship network connecting the top 25 collaborators of I.N. Osiyuk. A scholar is included among the top collaborators of I.N. Osiyuk based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I.N. Osiyuk. I.N. Osiyuk is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices 2008 ·Applied Physics B ·Sławomir Prucnal,L. Rebohle,A. N. Nazarov,I.N. Osiyuk,(unknown),W. Skorupa	8
2	Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layers 2007 ·Applied Physics B ·Sławomir Prucnal,(unknown),A. N. Nazarov,(unknown),I.N. Osiyuk,(unknown),W. Skorupa	7
3	Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC 2005 ·Solid-State Electronics ·Tamara Rudenko,I.N. Osiyuk,(unknown),(unknown),E.Ö. Sveinbjörnsson	69
4	Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals 2005 ·Applied Physics Letters ·A. N. Nazarov,Jiaming Sun,W. Skorupa,R.A. Yankov,I.N. Osiyuk,(unknown),В. С. Лысенко,T. Gebel	51
5	Rare Earth Ion Implantation for Silicon Based Light Emission 2005 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·W. Skorupa,(unknown),Sławomir Prucnal,L. Rebohle,T. Gebel,A. N. Nazarov,I.N. Osiyuk,M. Helm	9
6	Comparative Study of Charge Trapping in High-Dose Si and Ge-Implanted Al/SiO[sub 2]/Si Structures 2005 ·Journal of The Electrochemical Society ·A. N. Nazarov,W. Skorupa,I.N. Osiyuk,(unknown),В. С. Лысенко,(unknown),T. Gebel	4
7	Ion Beam Processing for Silicon - Based Light Emission 2003 ·MRS Proceedings ·W. Skorupa,T. Dekorsy,T. Gebel,M. Helm,В. С. Лысенко,A. N. Nazarov,I.N. Osiyuk,L. Rebohle,Bernd Schmidt,Jiaming Sun	1
8	Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection 2003 ·Journal of Applied Physics ·A. N. Nazarov,T. Gebel,L. Rebohle,W. Skorupa,I.N. Osiyuk,В. С. Лысенко	27
9	Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters 2003 ·Physica E Low-dimensional Systems and Nanostructures ·T. Gebel,L. Rebohle,(unknown),W. Skorupa,A. N. Nazarov,I.N. Osiyuk	10
10	Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection 2002 ·Microelectronics Reliability ·A. N. Nazarov,I.N. Osiyuk,В. С. Лысенко,T. Gebel,L. Rebohle,W. Skorupa	4
11	New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures 2002 ·Materials science forum ·(unknown),E.Ö. Sveinbjörnsson,Tamara Rudenko,Valeriya Kilchytska,(unknown),I.N. Osiyuk	9
12	Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique 2001 ·Applied Physics Letters ·Halldór Ólafsson,E.Ö. Sveinbjörnsson,Tamara Rudenko,(unknown),I.N. Osiyuk,В. С. Лысенко	16
13	Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors 2000 ·Microelectronics Reliability ·В. С. Лысенко,(unknown),Y. V. Gomeniuk,I.N. Osiyuk	11
14	Electrical characterization of the amorphous SiC-pSi structure 1999 ·Microelectronic Engineering ·В. С. Лысенко,(unknown),Y. V. Gomeniuk,I.N. Osiyuk,(unknown)	1
15	Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction 1998 ·Journal of Physics D Applied Physics ·В. С. Лысенко,(unknown),Y. V. Gomeniuk,I.N. Osiyuk,Igor Tkach	3
16	Current stochasticity of field emission of charge from traps in the transition layer of implanted MIS structures 1992 ·Applied Surface Science ·Y. V. Gomeniuk,(unknown),В. С. Лысенко,I.N. Osiyuk,(unknown)	4
17	Thermally stimulated field emission of charge from traps in the transition layer of SiSiO2 structures 1992 ·Applied Surface Science ·Y. V. Gomeniuk,(unknown),В. С. Лысенко,I.N. Osiyuk,(unknown)	10
18	Transformation of SiSiO2Al structures under RF-plasma treatment 1989 ·Applied Surface Science ·В. С. Лысенко,A. N. Nazarov,I.N. Osiyuk,(unknown)	1
19	Interrelation between surface states and transition layer defects in Si-SiO2 structures 1986 ·Solid State Communications ·В. С. Лысенко,(unknown),(unknown),(unknown),A. N. Nazarov,I.N. Osiyuk,Tamara Rudenko,(unknown)	12
20	Flash-lamp annealing of SiSiO2 transition layer defects 1985 ·physica status solidi (a) ·В. С. Лысенко,(unknown),(unknown),I.N. Osiyuk,(unknown),(unknown)	0

About I.N. Osiyuk

I.N. Osiyuk is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 28 papers that have together received 318 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Silicon Nanostructures and Photoluminescence (15 papers) and Semiconductor materials and interfaces (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (303 citations), Materials Chemistry (163 citations) and Atomic and Molecular Physics, and Optics (101 citations). I.N. Osiyuk has collaborated with scholars based in Ukraine, Germany and Sweden. Frequent co-authors include В. С. Лысенко, A. N. Nazarov, W. Skorupa, Tamara Rudenko, E.Ö. Sveinbjörnsson, T. Gebel, L. Rebohle, Y. V. Gomeniuk, R.A. Yankov and Jiaming Sun. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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