Yasumitsu Ohta

448 citations

22 papers · 369 indexed · h-index 12

Co-authors: Hidenori Mimura Toshiro Futagi Masakazu Katsuno Takahiro Matsumoto Atsushi Ikari Wataru Ohashi Yoshiharu Inoue Jun Takahashi
Topics: Thin-Film Transistor Technologies (10 papers)Silicon Nanostructures and Photoluminescence (8 papers)Semiconductor materials and devices (6 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: Japan

In The Last Decade

Yasumitsu Ohta

21 papers receiving 342 citations

Peers

Countries citing papers authored by Yasumitsu Ohta

Since Specialization

Citations

This map shows the geographic impact of Yasumitsu Ohta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yasumitsu Ohta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yasumitsu Ohta more than expected).

Fields of papers citing papers by Yasumitsu Ohta

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yasumitsu Ohta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yasumitsu Ohta. The network helps show where Yasumitsu Ohta may publish in the future.

Co-authorship network of co-authors of Yasumitsu Ohta

This figure shows the co-authorship network connecting the top 25 collaborators of Yasumitsu Ohta. A scholar is included among the top collaborators of Yasumitsu Ohta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yasumitsu Ohta. Yasumitsu Ohta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (I) –Investigation of the Crystallographic Structure– 2004 ·Japanese Journal of Applied Physics ·(unknown),(unknown),Yasumitsu Ohta,Atsushi Ikari,Masahiro Tanaka	4
2	Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (II) –Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping– 2004 ·Japanese Journal of Applied Physics ·(unknown),(unknown),Yasumitsu Ohta,Atsushi Ikari,Masahiro Tanaka	12
3	Effect of SiO[sub 2] Thickness on Dielectric Breakdown Defect Density Due to Surface Crystal-Originated Particles 2003 ·Journal of The Electrochemical Society ·Kikuo Yamabe,Yasuhiro Shimada,Min Yu Piao,T. Yamazaki,(unknown),Ryuji Takeda,Yasumitsu Ohta,(unknown),Masaharu Watanabe	3
4	Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals 2001 ·Journal of Applied Physics ·(unknown),Yoshiharu Inoue,(unknown),Atsushi Ikari,Jun Takahashi,(unknown),(unknown),Yasumitsu Ohta,Wataru Ohashi	100
5	Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs–Si Interface 1999 ·Japanese Journal of Applied Physics ·Takashi Aigo,Yasuhisa Fujita,(unknown),Yasumitsu Ohta	0
6	Defect Control in Nitrogen Doped Czochralski Silicon Crystals 1999 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Atsushi Ikari,(unknown),Yuya Tachikawa,(unknown),(unknown),Yasumitsu Ohta,Naoya Masahashi,Shinpei Hayashi,T. Hoshino,Wataru Ohashi	22
7	Prediction of Microstructures in Freezing of Cast Irons 1997 ·Advanced materials research ·Akio Kagawa,Yasumitsu Ohta	1
8	Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates 1996 ·IEEE Transactions on Electron Devices ·Takashi Aigo,(unknown),Yasumitsu Ohta,(unknown),(unknown),Akihiro Moritani	6
9	A small-signal linear equivalent circuit of HEMTs fabricated on GaAs-on-Si wafers 1996 ·IEEE Transactions on Microwave Theory and Techniques ·(unknown),Yasumitsu Ohta,Takashi Aigo,Akihiro Moritani	14
10	p-Type μc-SiC prepared by ECR PECVD using tetramethylsilane gas 1993 ·Applied Surface Science ·Masakazu Katsuno,Toshiro Futagi,Yasumitsu Ohta,Hidenori Mimura,(unknown)	4
11	Preparation of μc-SiC and its application for light emitting diodes 1993 ·Applied Surface Science ·Hidenori Mimura,Toshiro Futagi,Takahiro Matsumoto,Masakazu Katsuno,Yasumitsu Ohta,(unknown)	13
12	Visible light emission from a pn junction of porous silicon and microcrystalline silicon carbide 1993 ·Applied Physics Letters ·Toshiro Futagi,Takahiro Matsumoto,Masakazu Katsuno,Yasumitsu Ohta,Hidenori Mimura,(unknown)	40
13	Visible Electroluminescence from Pn Junction Type μc-Sic/ Porous Si / c-Si Structures 1992 ·MRS Proceedings ·Toshiro Futagi,Takahiro Matsumoto,Masakazu Katsuno,Yasumitsu Ohta,Hidenori Mimura,(unknown)	4
14	Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes 1992 ·Japanese Journal of Applied Physics ·Toshiro Futagi,Takahiro Matsumoto,Masakazu Katsuno,Yasumitsu Ohta,Hidenori Mimura,(unknown)	52
15	Photoluminescence in Hydrogenated Amorphous Carbon Films Prepared at Room Temperature 1991 ·Japanese Journal of Applied Physics ·Noboru Ohtani,Masakazu Katsuno,Toshiro Futagi,Yasumitsu Ohta,Hidenori Mimura,K. Kawamura	14
16	Highly conductive and wide optical band gap n-type μc-SiC prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition 1991 ·Applied Physics Letters ·Toshiro Futagi,Masakazu Katsuno,Noboru Ohtani,Yasumitsu Ohta,Hidenori Mimura,K. Kawamura	26
17	A two-dimensional image sensor with aSi:H pin diodes 1991 ·Applied Surface Science ·Hidenori Mimura,(unknown),Yasumitsu Ohta,Kazuo Yamamoto,(unknown)	11
18	Long-lived MOCVD-grown 780 nm SBA laser with reduced influence of regrowth interface 1988 ·Journal of Crystal Growth ·(unknown),Yutaka Nagai,Yasumitsu Ohta,Toshiki Tanaka,(unknown),W. Susaki	3
19	Electron Transport in Low-Stage Graphite-ICl Intercalation Compounds 1988 ·Journal of the Physical Society of Japan ·Yasumitsu Ohta,Kiyoshi Kawamura,Takurō Tsuzuku	9
20	C-Axis Conduction in Low Stage Graphite Intercalation Compounds with Iodine Monochrolide 1986 ·Journal of the Physical Society of Japan ·Yasumitsu Ohta,Kiyoshi Kawamura,Takurō Tsuzuku	12

About Yasumitsu Ohta

Yasumitsu Ohta is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics, having authored 22 papers that have together received 369 indexed citations. Recurring topics across this work include Thin-Film Transistor Technologies (10 papers), Silicon Nanostructures and Photoluminescence (8 papers) and Semiconductor materials and devices (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (326 citations), Materials Chemistry (229 citations) and Atomic and Molecular Physics, and Optics (110 citations). Yasumitsu Ohta has collaborated with scholars based in Japan. Frequent co-authors include Hidenori Mimura, Toshiro Futagi, Masakazu Katsuno, Takahiro Matsumoto, Atsushi Ikari, Wataru Ohashi, Yoshiharu Inoue, Jun Takahashi, Noboru Ohtani and Takurō Tsuzuku. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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