M. Germain

53.3k citations

28 papers · 220 indexed · h-index 10

Impact in

Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 15
- GaN-based semiconductor devices and materials 15
Nuclear and High Energy Physics 7
- Particle Detector Development and Performance 3

Co-authors: G. Borghs (7 shared papers)Kai Cheng (8 shared papers)Joff Derluyn (8 shared papers)Maarten Leys (3 shared papers)P.J. Sellin (1 shared paper)Christophe Gaquière (2 shared papers)Alan Owens (1 shared paper)Stefan Degroote (3 shared papers)
Journals: Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (5 papers)Journal of Crystal Growth (3 papers)Nuclear Physics A (2 papers)IEEE Electron Device Letters (1 paper)Journal of Applied Physics (1 paper)
Partner nations: France Belgium Germany

In The Last Decade

M. Germain

26 papers receiving 211 citations

Peers

Countries citing papers authored by M. Germain

Since Specialization

Citations

This map shows the geographic impact of M. Germain's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Germain with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Germain more than expected).

Fields of papers citing papers by M. Germain

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Germain. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Germain. The network helps show where M. Germain may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Germain, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Germain Line = papers co-authored together M. Germain links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 28 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Kai Cheng, M. Leys, Joff Derluyn, K. Balachander, S. Degroote, M. Germain, G. Borghs	2008	31
2	GaN detector development for particle and X-ray detection Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·Alan Owens, A. Barnes, R.A. Farley, M. Germain, P.J. Sellin	2011	22
3	Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection IEEE Electron Device Letters ·Paweł E. Malinowski, J. John, J.-Y. Duboz, Geert Hellings, Anne Lorenz, J. Madrid, Charles Sturdevant, Kai Cheng, Maarten Leys, Joff Derluyn, J. Das, M. Germain, K. Minoglou, Piet De Moor, Éric Frayssinet, F. Sèmond, J.‐F. Hochedez, B. Giordanengo, R. Mertens	2009	21
4	Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation Journal of Crystal Growth ·Kai Cheng, Maarten Leys, Stefan Degroote, H. Bender, Paola Favia, G. Borghs, M. Germain	2012	18
5	AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation Journal of Crystal Growth ·Kai Cheng, S. Degroote, M. Leys, F Medjdoub, Joff Derluyn, B. Sijmus, M. Germain, G. Borghs	2010	18
6	ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements Dominique Schreurs, Jan Verspecht, E.P. Vandamme, N. Vellas, Christophe Gaquière, M. Germain, G. Borghs	2003	17
7	Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates Journal of Crystal Growth ·M. Leys, Kai Cheng, Joff Derluyn, S. Degroote, M. Germain, G. Borghs, C. A. Taylor, P. Dawson	2008	14
8	Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer Journal of Applied Physics ·R. Kudrawiec, B. Paszkiewicz, M. Motyka, J. Misiewicz, Joff Derluyn, Anne Lorenz, Kai Cheng, J. Das, M. Germain	2008	12
9	High transverse momentum proton emission in Ar + Ta collisions at 94 MeV/u Nuclear Physics A ·M. Germain, P. Eudes, F. Guilbault, P. Lautridou, J.L. Laville, C. Lebrun, M. LeGuay, A. Rahmani, T. Reposeur, J. Benlliure, R. Bougault, F. Gulminelli, O. Lopez, P Gagné, J. P. Wieleczko	1997	11
10	High power and linearity performances of gallium nitride HEMT devices on sapphire substrate Electronics Letters ·M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Théron, B. Boudart, Virginie Hoel, M. Germain, J.C. De Jaeger, S.L. Delage	2005	11
11	Linking nanotechnology to gigawatts: Creating building blocks for smart PV modules Progress in Photovoltaics Research and Applications ·J. Poortmans, Kris Baert, Jonathan Govaerts, R. Mertens, Francky Catthoor, M. Germain, J. Das, Johan Driesen	2010	9
12	Beyond mean field confrontation of different models with high transverse momentum proton spectra Physics Letters B ·M. Germain, C. Hartnack, J.L. Laville, J. Aichelin, M. Belkacem, E. Suraud	1998	5
13	Al x Ga 1-x N focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J. John, Paweł E. Malinowski, P. Aparicio, Geert Hellings, Anne Lorenz, M. Germain, F. Sèmond, J.-Y. Duboz, A. BenMoussa, J.‐F. Hochedez, U. Kroth, M. Richter	2007	5
14	AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Paweł E. Malinowski, J.-Y. Duboz, J. John, Charles Sturdevant, J. Das, Joff Derluyn, M. Germain, Piet De Moor, K. Minoglou, F. Sèmond, Éric Frayssinet, J.‐F. Hochedez, B. Giordanengo, Chris Van Hoof, R. Mertens	2010	3
15	Irradiation of a silicon-strip detector and readout chips for the ALICE experiment at LHC Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·M. Germain, G. Guillaume, C. Suire, A. Tarchini, J. P. Coffin, L. Arnold, J. Baudot, Dominique Bonnet, W. Dulinski, F. Jundt, C. Kuhn, Florent Kuntz, J.R. Lutz, S. Higueret, A. Michalon	1999	3
16	In situ bow monitoring: towards uniform blue and green InGaN/GaN quantum well structures grown on 100 mm sapphire substrates by MOVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Kai Cheng, Stefan Degroote, Maarten Leys, L.Y. Zhang, Joff Derluyn, M. Germain, G. Borghs	2010	3
17	A Fizeau optical interferometer astrometric satellite NASA Technical Reports Server (NASA) ·P. K. Seidelmann, K. J. Johnston, S. E. Urban, M. Germain, T. E. Corbin, M. Shao, Yu Ji, James L. Fanson, L. J. Rickard, K. W. Weiler	1995	3
18	The intrinsic free carrier mobility in AlGaN/GaN quantum wells MRS Proceedings ·Francesca Carosella, M. Germain, J. L. Farvacque	2004	3
19	Relation between Microstructure and 2DEG Properties of AlGaN/GaN Structures physica status solidi (b) ·Benny Van Daele, Gustaaf Van Tendeloo, M. Germain, M. Leys, Z. Bougrioua, Ingrid Moerman	2002	2
20	Search for strange dibaryons in STAR and ALICE Journal of Physics G Nuclear and Particle Physics ·C. Kuhn, B. Hippolyte, J. P. Coffin, J. Baudot, I. Belikov, Dennis D. Dietrich, M. Germain, C. Suire	2002	2

About M. Germain

M. Germain is a scholar working on Condensed Matter Physics, Nuclear and High Energy Physics, Electrical and Electronic Engineering, Radiation and Electronic, Optical and Magnetic Materials, having authored 28 papers that have together received 220 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (15 papers), Semiconductor materials and devices (7 papers), Ga2O3 and related materials (4 papers), ZnO doping and properties (4 papers), Particle Detector Development and Performance (3 papers), Metal and Thin Film Mechanics (3 papers), Photocathodes and Microchannel Plates (3 papers) and Advancements in Semiconductor Devices and Circuit Design (3 papers). The work is most often cited by research in Condensed Matter Physics (154 citations), Electronic, Optical and Magnetic Materials (83 citations), Nuclear Energy and Engineering (1 citation), Electrical and Electronic Engineering (109 citations) and Nuclear and High Energy Physics (24 citations). M. Germain has collaborated with scholars based in France, Belgium and Germany. Frequent co-authors include G. Borghs, Kai Cheng, Joff Derluyn, Maarten Leys, P.J. Sellin, Christophe Gaquière, Alan Owens, Stefan Degroote, Anne Lorenz and H. Bender. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, Journal of Crystal Growth, Nuclear Physics A, IEEE Electron Device Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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