Daniel A. Haeger

650 total citations
20 papers, 551 citations indexed

About

Daniel A. Haeger is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Daniel A. Haeger has authored 20 papers receiving a total of 551 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Condensed Matter Physics, 13 papers in Atomic and Molecular Physics, and Optics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Daniel A. Haeger's work include GaN-based semiconductor devices and materials (20 papers), Semiconductor Quantum Structures and Devices (13 papers) and Ga2O3 and related materials (6 papers). Daniel A. Haeger is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Semiconductor Quantum Structures and Devices (13 papers) and Ga2O3 and related materials (6 papers). Daniel A. Haeger collaborates with scholars based in United States, Japan and Russia. Daniel A. Haeger's co-authors include Steven P. DenBaars, Shuji Nakamura, James S. Speck, Robert M. Farrell, Po Shan Hsu, K. Fujito, Kenji Fujito, Kathryn M. Kelchner, Daniel A. Cohen and Matthew T. Hardy and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

Daniel A. Haeger

19 papers receiving 534 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daniel A. Haeger United States 13 502 323 175 164 159 20 551
Takatoshi Ikegami Japan 5 494 1.0× 357 1.1× 156 0.9× 174 1.1× 152 1.0× 6 563
H. Jönen Germany 14 462 0.9× 253 0.8× 215 1.2× 144 0.9× 202 1.3× 24 522
Yohei Enya Japan 7 602 1.2× 441 1.4× 200 1.1× 202 1.2× 193 1.2× 9 680
Takamichi Sumitomo Japan 5 618 1.2× 382 1.2× 180 1.0× 278 1.7× 217 1.4× 9 698
G. Franssen Poland 15 486 1.0× 312 1.0× 189 1.1× 173 1.1× 184 1.2× 43 557
Tsunenori Asatsuma Japan 12 355 0.7× 290 0.9× 154 0.9× 167 1.0× 118 0.7× 27 455
Veit Hoffmann Germany 14 441 0.9× 235 0.7× 222 1.3× 273 1.7× 197 1.2× 44 585
Anna Feduniewicz‐Żmuda Poland 15 410 0.8× 264 0.8× 146 0.8× 182 1.1× 142 0.9× 44 475
Takashi Kyono Japan 11 718 1.4× 480 1.5× 242 1.4× 238 1.5× 255 1.6× 19 806
Christos Thomidis United States 15 439 0.9× 246 0.8× 179 1.0× 184 1.1× 240 1.5× 35 561

Countries citing papers authored by Daniel A. Haeger

Since Specialization
Citations

This map shows the geographic impact of Daniel A. Haeger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel A. Haeger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel A. Haeger more than expected).

Fields of papers citing papers by Daniel A. Haeger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel A. Haeger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel A. Haeger. The network helps show where Daniel A. Haeger may publish in the future.

Co-authorship network of co-authors of Daniel A. Haeger

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel A. Haeger. A scholar is included among the top collaborators of Daniel A. Haeger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel A. Haeger. Daniel A. Haeger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Farrell, Robert M., Daniel A. Haeger, K. Fujito, et al.. (2013). Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates. Journal of Applied Physics. 113(6). 11 indexed citations
2.
Hardy, Matthew T., Feng Wu, Po Shan Hsu, et al.. (2013). True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy. Journal of Applied Physics. 114(18). 23 indexed citations
3.
Garrett, Gregory A., P. Rotella, Hongen Shen, et al.. (2012). Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN. physica status solidi (b). 249(3). 507–510. 1 indexed citations
4.
Haeger, Daniel A., Erin C. Young, Roy B. Chung, et al.. (2012). 384 nm AlGaN Diode Lasers on Relaxed Semipolar Buffers. 7230. CTu2N.4–CTu2N.4. 1 indexed citations
5.
Hardy, Matthew T., Erin C. Young, Po Shan Hsu, et al.. (2012). Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures. Applied Physics Letters. 101(13). 9 indexed citations
6.
Haeger, Daniel A., Erin C. Young, Roy B. Chung, et al.. (2012). 384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer. Applied Physics Letters. 100(16). 22 indexed citations
7.
Young, Erin C., Feng Wu, А. Е. Романов, et al.. (2012). Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission. Applied Physics Letters. 101(14). 20 indexed citations
8.
Hsu, Po Shan, Junichi Sonoda, Kathryn M. Kelchner, et al.. (2011). Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2390–2392. 6 indexed citations
9.
Hardy, Matthew T., Robert M. Farrell, Po Shan Hsu, et al.. (2011). Effect of n‐AlGaN cleave assistance layers on the morphology of c ‐plane cleaved facets for m ‐plane InGaN/GaN laser diodes. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2226–2228. 1 indexed citations
10.
Farrell, Robert M., Daniel A. Haeger, Po Shan Hsu, et al.. (2011). High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes. Applied Physics Letters. 99(17). 31 indexed citations
11.
Farrell, Robert M., Daniel A. Haeger, Po Shan Hsu, et al.. (2011). AlGaN-Cladding-Free $m$-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers. Applied Physics Express. 4(9). 92105–92105. 3 indexed citations
12.
Farrell, Robert M., Daniel A. Haeger, Po Shan Hsu, et al.. (2011). Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes. Applied Physics Letters. 99(17). 42 indexed citations
13.
Farrell, Robert M., Daniel A. Haeger, Xiang Chen, et al.. (2010). Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates. Applied Physics Letters. 96(23). 40 indexed citations
14.
Farrell, Robert M., Po Shan Hsu, Daniel A. Haeger, et al.. (2010). Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes. Applied Physics Letters. 96(23). 60 indexed citations
15.
Farrell, Robert M., Daniel A. Haeger, Xiang Chen, et al.. (2010). Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes. Journal of Crystal Growth. 313(1). 1–7. 33 indexed citations
16.
Hsu, Po Shan, Kathryn M. Kelchner, Anurag Tyagi, et al.. (2010). InGaN/GaN Blue Laser Diode Grown on Semipolar (30\bar31) Free-Standing GaN Substrates. Applied Physics Express. 3(5). 52702–52702. 23 indexed citations
17.
Lin, You-Da, Matthew T. Hardy, Po Shan Hsu, et al.. (2009). Blue-Green InGaN/GaN Laser Diodes on Miscutm-Plane GaN Substrate. Applied Physics Express. 2. 82102–82102. 50 indexed citations
18.
Kelchner, Kathryn M., Matthew T. Hardy, Chia‐Yen Huang, et al.. (2009). Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding. Applied Physics Express. 2. 71003–71003. 30 indexed citations
19.
Tyagi, Anurag, Robert M. Farrell, Kathryn M. Kelchner, et al.. (2009). AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm. Applied Physics Express. 3(1). 11002–11002. 74 indexed citations
20.
Farrell, Robert M., Daniel Feezell, Mathew C. Schmidt, et al.. (2007). Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes. Japanese Journal of Applied Physics. 46(8L). L761–L761. 71 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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