G. Franssen

660 total citations
43 papers, 557 citations indexed

About

G. Franssen is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, G. Franssen has authored 43 papers receiving a total of 557 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Condensed Matter Physics, 32 papers in Atomic and Molecular Physics, and Optics and 16 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in G. Franssen's work include GaN-based semiconductor devices and materials (41 papers), Semiconductor Quantum Structures and Devices (30 papers) and Ga2O3 and related materials (16 papers). G. Franssen is often cited by papers focused on GaN-based semiconductor devices and materials (41 papers), Semiconductor Quantum Structures and Devices (30 papers) and Ga2O3 and related materials (16 papers). G. Franssen collaborates with scholars based in Poland, Germany and United States. G. Franssen's co-authors include T. Suski, P. Perlin, M. Leszczyński, I. Grzegory, R. Czernecki, Agata Kamińska, Szymon Grzanka, R. Piotrzkowski, E. Litwin‐Staszewska and S. Porowski and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

G. Franssen

42 papers receiving 542 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. Franssen Poland	15	486	312	189	184	173	43	557
Christophe A. Hurni United States	14	610 1.3×	293 0.9×	220 1.2×	246 1.3×	344 2.0×	22	713
Christos Thomidis United States	15	439 0.9×	246 0.8×	179 0.9×	240 1.3×	184 1.1×	35	561
S. Ruffenach France	12	305 0.6×	263 0.8×	278 1.5×	178 1.0×	201 1.2×	27	542
Daniel A. Haeger United States	13	502 1.0×	323 1.0×	175 0.9×	159 0.9×	164 0.9×	20	551
R. S. Qhalid Fareed United States	16	615 1.3×	194 0.6×	308 1.6×	343 1.9×	196 1.1×	34	701
Takatoshi Ikegami Japan	5	494 1.0×	357 1.1×	156 0.8×	152 0.8×	174 1.0×	6	563
G. Brüderl Germany	16	542 1.1×	444 1.4×	150 0.8×	143 0.8×	328 1.9×	39	689
V. V. Mamutin Russia	10	545 1.1×	273 0.9×	303 1.6×	257 1.4×	191 1.1×	44	661
V. Bousquet United Kingdom	12	359 0.7×	269 0.9×	226 1.2×	145 0.8×	267 1.5×	35	533
S. E. Hooper United Kingdom	17	720 1.5×	463 1.5×	248 1.3×	269 1.5×	374 2.2×	52	834

Countries citing papers authored by G. Franssen

Since Specialization

Citations

This map shows the geographic impact of G. Franssen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Franssen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Franssen more than expected).

Fields of papers citing papers by G. Franssen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Franssen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Franssen. The network helps show where G. Franssen may publish in the future.

Co-authorship network of co-authors of G. Franssen

This figure shows the co-authorship network connecting the top 25 collaborators of G. Franssen. A scholar is included among the top collaborators of G. Franssen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Franssen. G. Franssen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Franssen, G., et al.. (2009). Femtosecond lasers for countermeasure applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7483. 748309–748309. 5 indexed citations

Perlin, P., G. Franssen, R. Czernecki, et al.. (2009). Nitride‐based quantum structures and devices on modified GaN substrates. physica status solidi (a). 206(6). 1130–1134. 16 indexed citations

Franssen, G., T. Suski, M. Kryśko, et al.. (2008). Influence of substrate misorientation on properties of InGaN layers grown on freestanding GaN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1485–1487. 9 indexed citations

Franssen, G., Agata Kamińska, T. Suski, et al.. (2008). Conduction band filling in In‐rich InGaN and InN under hydrostatic pressure. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1488–1490. 2 indexed citations

Franssen, G., T. Suski, M. Kryśko, et al.. (2008). Built-in electric field and large Stokes shift in near-lattice-matched GaN∕AlInN quantum wells. Applied Physics Letters. 92(20). 18 indexed citations

Suski, T., G. Franssen, Agata Kamińska, et al.. (2007). The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6473. 647311–647311. 6 indexed citations

Franssen, G., C. Skierbiszewski, R. Czernecki, et al.. (2007). Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates. Semiconductor Science and Technology. 22(7). 736–741. 1 indexed citations

Dworzak, M., Tony Pereira, A. Hoffmann, et al.. (2007). Gain mechanisms in field‐free InGaN layers grown on sapphire and bulk GaN substrate. physica status solidi (RRL) - Rapid Research Letters. 1(4). 141–143. 1 indexed citations

Grzanka, Szymon, G. Franssen, G. Targowski, et al.. (2007). Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes. Applied Physics Letters. 90(10). 43 indexed citations

10.

Franssen, G., T. Suski, P. Perlin, et al.. (2006). Investigation of polarization‐induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure. physica status solidi (b). 244(1). 32–37. 3 indexed citations

11.

Marona, Łucja, T. Riemann, J. Christen, et al.. (2006). Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals. physica status solidi (a). 203(7). 1778–1782. 4 indexed citations

12.

Žukauskas, A., Karolis Kazlauskas, Gintautas Tamulaitis, et al.. (2006). Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates. physica status solidi (b). 243(7). 1614–1618. 6 indexed citations

13.

Franssen, G., T. Suski, P. Perlin, et al.. (2005). Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN. Applied Physics Letters. 87(4). 37 indexed citations

14.

Perlin, P., Łucja Marona, M. Leszczyński, et al.. (2005). Properties of violet laser diodes grown on bulk GaN substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5738. 72–72. 4 indexed citations

15.

Franssen, G., T. Suski, P. Perlin, et al.. (2005). Screening of built‐in electric fields in group III‐nitride laser diodes observed by means of hydrostatic pressure. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(3). 1019–1022. 1 indexed citations

16.

Dworzak, M., A. Hoffmann, G. Franssen, et al.. (2005). Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate. MRS Proceedings. 892(1). 2 indexed citations

17.

Franssen, G., P. Perlin, & T. Suski. (2004). Photocurrent spectroscopy as a tool for determining piezoelectric fields inInxGa1−xN/GaNmultiple quantum well light emitting diodes. Physical Review B. 69(4). 44 indexed citations

18.

Perlin, P., M. Leszczyński, P. Prystawko, et al.. (2004). High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5365. 288–288. 1 indexed citations

19.

Perlin, P., M. Leszczyński, P. Prystawko, et al.. (2004). GaN based light emitters fabricated on bulk GaN substrates. New class of low dislocation density devices. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1(6). 1505–1510.

20.

Franssen, G., E. Litwin‐Staszewska, R. Piotrzkowski, T. Suski, & P. Perlin. (2003). Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes. Journal of Applied Physics. 94(9). 6122–6128. 31 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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