Kathryn M. Kelchner

1.0k total citations · 1 hit paper
29 papers, 876 citations indexed

About

Kathryn M. Kelchner is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Kathryn M. Kelchner has authored 29 papers receiving a total of 876 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Condensed Matter Physics, 19 papers in Atomic and Molecular Physics, and Optics and 9 papers in Electrical and Electronic Engineering. Recurrent topics in Kathryn M. Kelchner's work include GaN-based semiconductor devices and materials (26 papers), Semiconductor Quantum Structures and Devices (18 papers) and ZnO doping and properties (6 papers). Kathryn M. Kelchner is often cited by papers focused on GaN-based semiconductor devices and materials (26 papers), Semiconductor Quantum Structures and Devices (18 papers) and ZnO doping and properties (6 papers). Kathryn M. Kelchner collaborates with scholars based in United States, Japan and Sweden. Kathryn M. Kelchner's co-authors include James S. Speck, Steven P. DenBaars, Shuji Nakamura, Claude Weisbuch, Stuart Brinkley, Elison Matioli, Yan-Ling Hu, Robert M. Farrell, Kenji Fujito and Po Shan Hsu and has published in prestigious journals such as Applied Physics Letters, Chemistry of Materials and Japanese Journal of Applied Physics.

In The Last Decade

Kathryn M. Kelchner

28 papers receiving 844 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

High-brightness polarized light-emitting diodes

2012 222 citations Kathryn M. Kelchner, Yan-Ling Hu et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Kathryn M. Kelchner United States	17	657	459	329	325	217	29	876
Bastien Bonef United States	17	484 0.7×	328 0.7×	342 1.0×	315 1.0×	212 1.0×	44	805
Shinya Nunoue Japan	15	932 1.4×	479 1.0×	393 1.2×	435 1.3×	176 0.8×	61	1.1k
Shigehiko Hasegawa Japan	17	464 0.7×	536 1.2×	427 1.3×	589 1.8×	149 0.7×	170	1.1k
T. Bretagnon France	19	437 0.7×	474 1.0×	406 1.2×	431 1.3×	184 0.8×	55	952
T. M. Smeeton United Kingdom	13	651 1.0×	341 0.7×	292 0.9×	359 1.1×	214 1.0×	32	845
Julien Renard France	21	496 0.8×	543 1.2×	400 1.2×	658 2.0×	270 1.2×	45	1.2k
Christopher D. Yerino United States	17	649 1.0×	271 0.6×	273 0.8×	520 1.6×	142 0.7×	22	867
Zhaoxia Bi Sweden	15	336 0.5×	184 0.4×	287 0.9×	353 1.1×	318 1.5×	41	731
G. Kamler Poland	17	781 1.2×	264 0.6×	350 1.1×	418 1.3×	113 0.5×	59	902
I. K. Shmagin United States	11	795 1.2×	360 0.8×	391 1.2×	419 1.3×	223 1.0×	16	1.0k

Countries citing papers authored by Kathryn M. Kelchner

Since Specialization

Citations

This map shows the geographic impact of Kathryn M. Kelchner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kathryn M. Kelchner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kathryn M. Kelchner more than expected).

Fields of papers citing papers by Kathryn M. Kelchner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kathryn M. Kelchner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kathryn M. Kelchner. The network helps show where Kathryn M. Kelchner may publish in the future.

Co-authorship network of co-authors of Kathryn M. Kelchner

This figure shows the co-authorship network connecting the top 25 collaborators of Kathryn M. Kelchner. A scholar is included among the top collaborators of Kathryn M. Kelchner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kathryn M. Kelchner. Kathryn M. Kelchner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Roberts, John, et al.. (2023). Aperture-Based Scanning Near-Field Optical Microscopy of Metallic Projection Patterns. 1–2.

Leick, Noémi, et al.. (2017). Atomic Layer Deposition of SiC_xN_y Using Si₂Cl₆ and CH₃NH₂ Plasma. Chemistry of Materials. 29(15). 6269–6278. 21 indexed citations

Mensi, Mounir, Kathryn M. Kelchner, Shuji Nakamura, et al.. (2017). Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy. ACS Photonics. 5(2). 528–534. 21 indexed citations

Kuritzky, Leah Y., Daniel J. Myers, Kathryn M. Kelchner, et al.. (2015). Electroluminescence characteristics of blue InGaN quantum wells onm-plane GaN “double miscut” substrates. Applied Physics Express. 8(6). 61002–61002. 5 indexed citations

Young, Nathan G., Kathryn M. Kelchner, Yan-Ling Hu, et al.. (2015). Low damage dry etch for III-nitride light emitters. Semiconductor Science and Technology. 30(8). 85019–85019. 11 indexed citations

Marcinkevičius, S., Kathryn M. Kelchner, Shuji Nakamura, Steven P. DenBaars, & James S. Speck. (2014). Optical properties and carrier dynamics in m ‐plane InGaN quantum wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 690–693. 8 indexed citations

Kelchner, Kathryn M., Leah Y. Kuritzky, Shuji Nakamura, Steven P. DenBaars, & James S. Speck. (2014). Stable vicinal step orientations in m-plane GaN. Journal of Crystal Growth. 411. 56–62. 13 indexed citations

Hausmann, Dennis M., et al.. (2014). Challenges with Industrialization of Atomic Layer Deposition of Silicon Nitride. ECS Meeting Abstracts. MA2014-02(30). 1608–1608. 1 indexed citations

Kelchner, Kathryn M., et al.. (2013). Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells. Applied Physics Letters. 103(11). 45 indexed citations

10.

Farrell, Robert M., Matthew T. Hardy, Po Shan Hsu, et al.. (2013). Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates. Applied Physics Letters. 103(15). 41 indexed citations

11.

Kelchner, Kathryn M., Leah Y. Kuritzky, Kenji Fujito, et al.. (2013). Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates. Journal of Crystal Growth. 382. 80–86. 21 indexed citations

12.

Armstrong, Andrew, et al.. (2012). Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters. 100(8). 15 indexed citations

13.

Hsu, Po Shan, Junichi Sonoda, Kathryn M. Kelchner, et al.. (2011). Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2390–2392. 6 indexed citations

14.

Hardy, Matthew T., Robert M. Farrell, Po Shan Hsu, et al.. (2011). Effect of n‐AlGaN cleave assistance layers on the morphology of c ‐plane cleaved facets for m ‐plane InGaN/GaN laser diodes. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2226–2228. 1 indexed citations

15.

Farrell, Robert M., Daniel A. Haeger, Po Shan Hsu, et al.. (2011). AlGaN-Cladding-Free $m$-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers. Applied Physics Express. 4(9). 92105–92105. 3 indexed citations

16.

Farrell, Robert M., Daniel A. Haeger, Xiang Chen, et al.. (2010). Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes. Journal of Crystal Growth. 313(1). 1–7. 33 indexed citations

17.

Lin, You-Da, Matthew T. Hardy, Po Shan Hsu, et al.. (2009). Blue-Green InGaN/GaN Laser Diodes on Miscutm-Plane GaN Substrate. Applied Physics Express. 2. 82102–82102. 50 indexed citations

18.

Kelchner, Kathryn M., Matthew T. Hardy, Chia‐Yen Huang, et al.. (2009). Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding. Applied Physics Express. 2. 71003–71003. 30 indexed citations

19.

Hardy, Matthew T., Kathryn M. Kelchner, You-Da Lin, et al.. (2009). m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching. Applied Physics Express. 2(12). 121004–121004. 38 indexed citations

20.

Farrell, Robert M., Daniel Feezell, Mathew C. Schmidt, et al.. (2007). Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes. Japanese Journal of Applied Physics. 46(8L). L761–L761. 71 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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