P. Rotella

698 total citations
29 papers, 538 citations indexed

About

P. Rotella is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, P. Rotella has authored 29 papers receiving a total of 538 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 9 papers in Condensed Matter Physics. Recurrent topics in P. Rotella's work include Semiconductor Quantum Structures and Devices (21 papers), Advanced Semiconductor Detectors and Materials (12 papers) and Semiconductor Lasers and Optical Devices (11 papers). P. Rotella is often cited by papers focused on Semiconductor Quantum Structures and Devices (21 papers), Advanced Semiconductor Detectors and Materials (12 papers) and Semiconductor Lasers and Optical Devices (11 papers). P. Rotella collaborates with scholars based in United States and Canada. P. Rotella's co-authors include Sanjay Krishna, S. Raghavan, A. Stintz, Stephen W. Kennerly, G. von Winckel, Christian Morath, A. Amtout, B. Fuchs, D. A. Cardimona and L. R. Dawson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

P. Rotella

29 papers receiving 516 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Rotella United States 12 426 422 164 86 64 29 538
Y. D. Jang South Korea 11 295 0.7× 257 0.6× 136 0.8× 79 0.9× 53 0.8× 41 425
S. K. Noh South Korea 10 343 0.8× 337 0.8× 176 1.1× 73 0.8× 38 0.6× 45 451
R. Kaspi United States 13 475 1.1× 460 1.1× 148 0.9× 64 0.7× 47 0.7× 31 554
Nacer Debbar Saudi Arabia 11 403 0.9× 344 0.8× 113 0.7× 41 0.5× 38 0.6× 33 486
Mostafa Masnadi‐Shirazi Canada 12 413 1.0× 357 0.8× 145 0.9× 156 1.8× 102 1.6× 20 584
M. J. Jurkovic United States 9 414 1.0× 372 0.9× 151 0.9× 35 0.4× 173 2.7× 19 510
H. Shen United States 12 499 1.2× 552 1.3× 110 0.7× 53 0.6× 93 1.5× 22 624
E.-M. Pavelescu Romania 18 680 1.6× 721 1.7× 200 1.2× 72 0.8× 317 5.0× 70 864
A. N. Pikhtin Russia 11 251 0.6× 252 0.6× 97 0.6× 56 0.7× 52 0.8× 32 356
J. C. Bourgoin France 14 439 1.0× 426 1.0× 134 0.8× 34 0.4× 70 1.1× 52 602

Countries citing papers authored by P. Rotella

Since Specialization
Citations

This map shows the geographic impact of P. Rotella's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Rotella with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Rotella more than expected).

Fields of papers citing papers by P. Rotella

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Rotella. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Rotella. The network helps show where P. Rotella may publish in the future.

Co-authorship network of co-authors of P. Rotella

This figure shows the co-authorship network connecting the top 25 collaborators of P. Rotella. A scholar is included among the top collaborators of P. Rotella based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Rotella. P. Rotella is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jones, Keith, et al.. (2018). Nano-indentation used to study pyramidal slip in GaN single crystals. Journal of Applied Physics. 123(6). 14 indexed citations
2.
Wei, Ming, et al.. (2013). Optimization of photoluminescence lifetime for ZnO films grown on ZnO substrates at low temperature. Materials Letters. 97. 11–14. 4 indexed citations
3.
Garrett, Gregory A., P. Rotella, Hongen Shen, et al.. (2012). Sub-Threshold Time-Resolved Spectroscopy of Mid-UV AlGaN Laser Diode Structures Pseudomorphically Grown on Bulk AlN. 312. JTh1L.5–JTh1L.5. 2 indexed citations
4.
Garrett, Gregory A., P. Rotella, Hongen Shen, et al.. (2012). Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN. physica status solidi (b). 249(3). 507–510. 1 indexed citations
5.
Moe, Craig, Gregory A. Garrett, P. Rotella, et al.. (2012). Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes. Applied Physics Letters. 101(25). 11 indexed citations
6.
Sampath, Anand V., et al.. (2011). Suppression of non‐radiative effects in AlGaN through nanometer scale compositional inhomogeneities. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(5). 1534–1538. 9 indexed citations
7.
Sampath, Anand V., Qiugui Zhou, Chad S. Gallinat, et al.. (2011). Impact of hetero-interface on the photoresponse of GAN/SIC separate absorption and multiplication avalanche photodiodes. 1–2. 1 indexed citations
8.
Wunderer, Thomas, John E. Northrup, Zhihong Yang, et al.. (2011). In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers. Applied Physics Letters. 99(20). 21 indexed citations
9.
Prasankumar, Rohit P., Richard D. Averitt, Junji Urayama, et al.. (2008). Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure. Optics Express. 16(2). 1165–1165. 20 indexed citations
10.
Balakrishnan, Ganesh, Manish Mehta, M. N. Kutty, et al.. (2007). Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates. Electronics Letters. 43(4). 244–245. 5 indexed citations
11.
Djie, H. S., B. S. Ooi, P. Rotella, et al.. (2006). Interdiffusion effect on quantum-well structures grown on GaSb substrate. Thin Solid Films. 515(10). 4352–4355. 7 indexed citations
12.
Balakrishnan, Ganesh, A. Jallipalli, P. Rotella, et al.. (2006). Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate. IEEE Journal of Selected Topics in Quantum Electronics. 12(6). 1636–1641. 30 indexed citations
13.
Balakrishnan, Ganesh, S. Huang, Arezou Khoshakhlagh, et al.. (2006). Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate. Electronics Letters. 42(6). 350–352. 34 indexed citations
14.
Amtout, A., S. Raghavan, P. Rotella, et al.. (2004). Theoretical modeling and experimental characterization of InAs∕InGaAs quantum dots in a well detector. Journal of Applied Physics. 96(7). 3782–3786. 63 indexed citations
15.
Le, Dang Thi Thanh, Christian Morath, D. A. Cardimona, et al.. (2003). High responsivity, LWIR dots-in-a-well quantum dot infrared photodetectors. Infrared Physics & Technology. 44(5-6). 517–526. 13 indexed citations
16.
Rotella, P., S. Raghavan, A. Stintz, et al.. (2003). Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layer. Journal of Crystal Growth. 251(1-4). 787–793. 9 indexed citations
17.
Dawson, L. R., et al.. (2003). 2.5–3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AlInSb metamorphic buffer layers. Journal of Applied Physics. 93(6). 3177–3181. 32 indexed citations
18.
Krishna, Sanjay, P. Rotella, S. Raghavan, et al.. (2003). Bias-dependent tunable response of normal incidence long wave infrared quantum dot detectors. 2. 754–755. 8 indexed citations
19.
Plis, E., P. Rotella, S. Raghavan, et al.. (2003). Growth of room-temperature “arsenic free” infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers. Applied Physics Letters. 82(11). 1658–1660. 8 indexed citations
20.
Raghavan, S., P. Rotella, A. Stintz, et al.. (2002). High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector. Applied Physics Letters. 81(8). 1369–1371. 107 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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