Kenji Iso

878 total citations
37 papers, 660 citations indexed

About

Kenji Iso is a scholar working on Condensed Matter Physics, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Kenji Iso has authored 37 papers receiving a total of 660 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Condensed Matter Physics, 20 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Kenji Iso's work include GaN-based semiconductor devices and materials (31 papers), ZnO doping and properties (20 papers) and Semiconductor Quantum Structures and Devices (13 papers). Kenji Iso is often cited by papers focused on GaN-based semiconductor devices and materials (31 papers), ZnO doping and properties (20 papers) and Semiconductor Quantum Structures and Devices (13 papers). Kenji Iso collaborates with scholars based in Japan and United States. Kenji Iso's co-authors include Steven P. DenBaars, Hisashi Yamada, Shuji Nakamura, Hisashi Masui, Makoto Saitô, James S. Speck, Kenji Fujito, Tetsuo Okada, Natalie Fellows and Hirohiko Hirasawa and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Langmuir.

In The Last Decade

Kenji Iso

35 papers receiving 629 citations

Peers

Countries citing papers authored by Kenji Iso

Since Specialization

Citations

This map shows the geographic impact of Kenji Iso's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kenji Iso with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kenji Iso more than expected).

Fields of papers citing papers by Kenji Iso

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kenji Iso. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kenji Iso. The network helps show where Kenji Iso may publish in the future.

Co-authorship network of co-authors of Kenji Iso

This figure shows the co-authorship network connecting the top 25 collaborators of Kenji Iso. A scholar is included among the top collaborators of Kenji Iso based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kenji Iso. Kenji Iso is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Diffusion of Acceptor Metal Impurities from Semi‐Insulating GaN into Undoped GaN Epitaxial Layers 2025 ·physica status solidi (b) ·Kenji Iso, Satoru Izumisawa	0
2	Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy 2024 ·IEEE Transactions on Electron Devices ·(unknown), Kenji Iso, (unknown), Yuji Ando, Jun Suda	5
3	Crystallization of high-resistivity Zn-doped GaN monocrystal via hydride vapor phase epitaxy 2023 ·Journal of Crystal Growth ·(unknown), Kenji Iso, Yuichi Oshima, Hirotaka Ikeda, Tae Mochizuki, Satoru Izumisawa	2
4	Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn 2023 ·physica status solidi (b) ·Kenji Iso, Hirotaka Ikeda, Tae Mochizuki, (unknown), Satoru Izumisawa	1
5	Growth of GaN on a three-dimensional SCAAT^TM bulk seed by tri-halide vapor phase epitaxy using GaCl₃ 2019 ·Japanese Journal of Applied Physics ·Kenji Iso, (unknown), (unknown), Hisashi Murakami, Akinori Koukitu	2
6	Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source 2018 ·Journal of Electronic Materials ·Kenji Iso, (unknown), (unknown), (unknown), Hisashi Murakami, Akinori Koukitu	2
7	Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl₃ 2017 ·physica status solidi (b) ·Kenji Iso, (unknown), (unknown), Hisashi Murakami, Akinori Koukitu	4
8	Thick nonpolar m-plane and semipolar (1011) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl3 2017 ·Journal of Crystal Growth ·Kenji Iso, (unknown), (unknown), (unknown), (unknown), Hisashi Murakami, Akinori Koukitu	4
9	Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source 2017 ·Journal of Crystal Growth ·Kenji Iso, Hisashi Murakami, Akinori Koukitu	2
10	Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source 2017 ·Journal of Electronic Materials ·Kenji Iso, (unknown), (unknown), Hisashi Murakami, Akinori Koukitu	2
11	Tri-halide vapor-phase epitaxy of GaN using GaCl₃ on polar, semipolar, and nonpolar substrates 2016 ·Applied Physics Express ·Kenji Iso, (unknown), (unknown), (unknown), (unknown), Hisashi Murakami, Akinori Koukitu	17
12	Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations 2009 ·Journal of Physics D Applied Physics ·Hisashi Masui, (unknown), (unknown), Hisashi Yamada, Kenji Iso, Samantha C. Cruz, Shuji Nakamura, Steven P. DenBaars	40
13	Recent progress in nonpolar LEDs as polarized light emitters 2008 ·physica status solidi (a) ·Hisashi Masui, Mathew C. Schmidt, Natalie Fellows, Hisashi Yamada, Kenji Iso, James S. Speck, Shuji Nakamura, Steven P. DenBaars	8
14	Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯) and (101¯1¯) planes 2008 ·Applied Physics Letters ·Hisashi Masui, Hisashi Yamada, Kenji Iso, Shuji Nakamura, Steven P. DenBaars	30
15	Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates 2008 ·physica status solidi (RRL) - Rapid Research Letters ·Hisashi Yamada, Kenji Iso, Makoto Saitô, Hirohiko Hirasawa, Natalie Fellows, Hisashi Masui, Kenji Fujito, James S. Speck, Steven P. DenBaars, Shuji Nakamura	35
16	Compositional Dependence of Nonpolarm-Plane In_xGa_1-xN/GaN Light Emitting Diodes 2008 ·Applied Physics Express ·Hisashi Yamada, Kenji Iso, Makoto Saitô, Hisashi Masui, Kenji Fujito, Steven P. DenBaars, Shuji Nakamura	45
17	Optical polarization of m ‐plane In‐GaN/GaN light‐emitting diodes characterized via confocal microscope 2008 ·physica status solidi (a) ·Hisashi Masui, Hisashi Yamada, Kenji Iso, Hirohiko Hirasawa, Natalie Fellows, James S. Speck, Shuji Nakamura, Steven P. DenBaars	26
18	Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes 2007 ·Japanese Journal of Applied Physics ·Hisashi Yamada, Kenji Iso, Makoto Saitô, Kenji Fujito, Steven P. DenBaars, James S. Speck, Shuji Nakamura	47
19	Simultaneous control of electrostatic micellar partition and electroosmotic flow-rate by anion-dominated partition into zwitterionic micelles 2001 ·Journal of Chromatography A ·Kenji Iso, Tetsuo Okada	10
20	Evaluation of Electrostatic Potential Induced by Anion-Dominated Partition into Zwitterionic Micelles and Origin of Selectivity in Anion Uptake 2000 ·Langmuir ·Kenji Iso, Tetsuo Okada	52

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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