H. Jönen

613 total citations
24 papers, 522 citations indexed

About

H. Jönen is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, H. Jönen has authored 24 papers receiving a total of 522 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 11 papers in Atomic and Molecular Physics, and Optics and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in H. Jönen's work include GaN-based semiconductor devices and materials (23 papers), Semiconductor Quantum Structures and Devices (11 papers) and Ga2O3 and related materials (9 papers). H. Jönen is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Semiconductor Quantum Structures and Devices (11 papers) and Ga2O3 and related materials (9 papers). H. Jönen collaborates with scholars based in Germany and France. H. Jönen's co-authors include A. Hangleiter, U. Rossów, H. Bremers, Lars Hoffmann, Torsten Langer, Moritz Brendel, F. Scholz, Thorsten Mehrtens, Marco Schowalter and Andreas Rosenauer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

H. Jönen

24 papers receiving 501 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Jönen Germany 14 462 253 215 202 144 24 522
Frank Lipski Germany 14 520 1.1× 210 0.8× 264 1.2× 216 1.1× 127 0.9× 26 554
R. C. Tu Taiwan 11 312 0.7× 179 0.7× 222 1.0× 142 0.7× 168 1.2× 30 424
Michael N. Fairchild United States 10 427 0.9× 121 0.5× 285 1.3× 220 1.1× 163 1.1× 14 531
H.-H. Wehmann Germany 15 333 0.7× 162 0.6× 302 1.4× 241 1.2× 226 1.6× 33 568
Rafal Ciechonski Sweden 10 329 0.7× 149 0.6× 229 1.1× 186 0.9× 228 1.6× 24 518
Tilman Schimpke Germany 14 453 1.0× 107 0.4× 263 1.2× 220 1.1× 197 1.4× 21 534
T. Moudakir France 16 525 1.1× 129 0.5× 283 1.3× 302 1.5× 194 1.3× 34 633
Christos Thomidis United States 15 439 1.0× 246 1.0× 179 0.8× 240 1.2× 184 1.3× 35 561
Hongen Xie United States 15 473 1.0× 214 0.8× 262 1.2× 253 1.3× 187 1.3× 29 584
Maosheng Hao Japan 8 602 1.3× 257 1.0× 287 1.3× 279 1.4× 255 1.8× 16 695

Countries citing papers authored by H. Jönen

Since Specialization
Citations

This map shows the geographic impact of H. Jönen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Jönen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Jönen more than expected).

Fields of papers citing papers by H. Jönen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Jönen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Jönen. The network helps show where H. Jönen may publish in the future.

Co-authorship network of co-authors of H. Jönen

This figure shows the co-authorship network connecting the top 25 collaborators of H. Jönen. A scholar is included among the top collaborators of H. Jönen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Jönen. H. Jönen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Langer, Torsten, H. Jönen, H. Bremers, et al.. (2015). Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells. physica status solidi (b). 253(1). 133–139. 19 indexed citations
2.
Langer, Torsten, H. Jönen, H. Bremers, et al.. (2014). S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination. Physical Review B. 90(20). 36 indexed citations
3.
Hoffmann, Lars, H. Bremers, H. Jönen, et al.. (2013). Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content. Applied Physics Letters. 102(10). 20 indexed citations
4.
Mehrtens, Thorsten, Marco Schowalter, Darius Tytko, et al.. (2013). Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast. Journal of Physics Conference Series. 471. 12009–12009. 1 indexed citations
5.
Mehrtens, Thorsten, Marco Schowalter, Darius Tytko, et al.. (2013). Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters. 102(13). 34 indexed citations
6.
Li, Shufeng, Xue Wang, Sönke Fündling, et al.. (2012). Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy. Applied Physics Letters. 101(3). 26 indexed citations
7.
Jönen, H., H. Bremers, Torsten Langer, U. Rossów, & A. Hangleiter. (2012). Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-SiC. Applied Physics Letters. 100(15). 13 indexed citations
8.
Rossów, U., H. Jönen, Lars Hoffmann, et al.. (2012). Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region. Journal of Crystal Growth. 370. 105–108. 2 indexed citations
9.
Jönen, H., H. Bremers, U. Rossów, et al.. (2012). Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties. Semiconductor Science and Technology. 27(2). 24013–24013. 18 indexed citations
10.
Brendel, Moritz, H. Jönen, Lars Hoffmann, et al.. (2011). Auger recombination in GaInN/GaN quantum well laser structures. Applied Physics Letters. 99(3). 54 indexed citations
11.
Jönen, H., U. Rossów, H. Bremers, et al.. (2011). Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells. Applied Physics Letters. 99(1). 24 indexed citations
12.
Langer, Torsten, Lars Hoffmann, H. Jönen, et al.. (2011). Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2170–2172. 99 indexed citations
13.
Thomsen, M. F., H. Jönen, U. Rossów, & A. Hangleiter. (2011). Effects of spontaneous polarization on GaInN/GaN quantum well structures. Journal of Applied Physics. 109(12). 11 indexed citations
14.
Thomsen, M. F., H. Jönen, U. Rossów, & A. Hangleiter. (2011). Spontaneous polarization field in polar and nonpolar GaInN/GaN quantum well structures. physica status solidi (b). 248(3). 627–631. 6 indexed citations
15.
Kraus, A., Richard J. Buss, H. Jönen, et al.. (2010). Growth and characterization of InGaN by RF-MBE. Journal of Crystal Growth. 323(1). 72–75. 23 indexed citations
16.
Bremers, H., et al.. (2010). X‐ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures. physica status solidi (b). 248(3). 616–621. 17 indexed citations
17.
Bremers, H., H. Jönen, Lars Hoffmann, U. Rossów, & A. Hangleiter. (2009). Mechanism of thermal degradation in GaInN/GaN quantum wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 10 indexed citations
18.
Jönen, H., H. Bremers, U. Rossów, et al.. (2009). Towards green lasing: ingredients for a green laser diode based on GaInN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 3 indexed citations
19.
Fuhrmann, D., H. Jönen, Lars Hoffmann, et al.. (2008). High quality, high efficiency and ultrahigh In‐content InGaN QWs – the problem of thermal stability. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1662–1664. 12 indexed citations
20.
Jönen, H., U. Rossów, Torsten Langer, et al.. (2008). Growth of QW structures with high indium concentration on -plane and -plane surfaces by MOVPE. Journal of Crystal Growth. 310(23). 4987–4991. 6 indexed citations

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