H. Jönen

613 citations

24 papers · 522 indexed · h-index 14

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 23
- GaN-based semiconductor devices and materials 23
Electronic, Optical and Magnetic Materials 9
- Ga2O3 and related materials 9

Co-authors: A. Hangleiter (24 shared papers)U. Rossów (23 shared papers)H. Bremers (19 shared papers)Lars Hoffmann (14 shared papers)Torsten Langer (9 shared papers)Moritz Brendel (4 shared papers)F. Scholz (4 shared papers)Marco Schowalter (4 shared papers)
Journals: Applied Physics Letters (7 papers)Journal of Crystal Growth (4 papers)physica status solidi (b) (4 papers)Semiconductor Science and Technology (1 paper)Physical Review B (1 paper)
Partner nations: Germany France

In The Last Decade

H. Jönen

24 papers receiving 501 citations

Peers

Countries citing papers authored by H. Jönen

Since Specialization

Citations

This map shows the geographic impact of H. Jönen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Jönen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Jönen more than expected).

Fields of papers citing papers by H. Jönen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Jönen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Jönen. The network helps show where H. Jönen may publish in the future.

Co-authors

The 25 scholars most cited alongside H. Jönen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Jönen Line = papers co-authored together H. Jönen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 24 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Torsten Langer, Andreas Kruse, Fedor Alexej Ketzer, Alexander Schwiegel, Lars Hoffmann, H. Jönen, H. Bremers, U. Rossów, A. Hangleiter	2011	99
2	Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures Applied Physics Letters ·Torsten Langer, H. Jönen, Andreas Kruse, H. Bremers, U. Rossów, A. Hangleiter	2013	72
3	Auger recombination in GaInN/GaN quantum well laser structures Applied Physics Letters ·Moritz Brendel, Andreas Kruse, H. Jönen, Lars Hoffmann, H. Bremers, U. Rossów, A. Hangleiter	2011	54
4	S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination Physical Review B ·Torsten Langer, Hans-Georg Pietscher, Fedor Alexej Ketzer, H. Jönen, H. Bremers, U. Rossów, Dirk Мenzel, A. Hangleiter	2014	36
5	Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography Applied Physics Letters ·Thorsten Mehrtens, Marco Schowalter, Darius Tytko, Pyuck‐Pa Choi, Dierk Raabe, Lars Hoffmann, H. Jönen, U. Rossów, A. Hangleiter, Andreas Rosenauer	2013	34
6	Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy Applied Physics Letters ·Shufeng Li, Xue Wang, Sönke Fündling, Milena Erenburg, Johannes Ledig, Jiandong Wei, Hergo H. Wehmann, A. Waag, Werner Bergbauer, Martin Mandl, Martin Straßburg, A. Trampert, U. Jahn, Henning Riechert, H. Jönen, A. Hangleiter	2012	26
7	Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells Applied Physics Letters ·H. Jönen, U. Rossów, H. Bremers, Lars Hoffmann, Moritz Brendel, A. D. Dräger, Stephan Schwaiger, F. Scholz, Johannes Thalmair, J. Zweck, A. Hangleiter	2011	24
8	Growth and characterization of InGaN by RF-MBE Journal of Crystal Growth ·A. Kraus, S. Hammadi, J. Hisek, Richard J. Buss, H. Jönen, H. Bremers, U. Rossów, E. Sakalauskas, R. Goldhahn, A. Hangleiter	2010	23
9	Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content Applied Physics Letters ·Lars Hoffmann, H. Bremers, H. Jönen, U. Rossów, Marco Schowalter, Thorsten Mehrtens, Andreas Rosenauer, A. Hangleiter	2013	20
10	Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells physica status solidi (b) ·Torsten Langer, Manuela Klisch, Fedor Alexej Ketzer, H. Jönen, H. Bremers, U. Rossów, Tobias Meisch, F. Scholz, A. Hangleiter	2015	19
11	Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties Semiconductor Science and Technology ·H. Jönen, H. Bremers, U. Rossów, Torsten Langer, Andreas Kruse, Lars Hoffmann, Johannes Thalmair, J. Zweck, Stephan Schwaiger, F. Scholz, A. Hangleiter	2012	18
12	X‐ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures physica status solidi (b) ·H. Bremers, Alexander Schwiegel, Lars Hoffmann, H. Jönen, U. Rossów, Johannes Thalmair, J. Zweck, A. Hangleiter	2010	17
13	Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-SiC Applied Physics Letters ·H. Jönen, H. Bremers, Torsten Langer, U. Rossów, A. Hangleiter	2012	13
14	Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces physica status solidi (b) ·H. Jönen, U. Rossów, H. Bremers, Lars Hoffmann, Moritz Brendel, A. D. Dräger, Sebastian Metzner, F. Bertram, J. Christen, Stephan Schwaiger, F. Scholz, Johannes Thalmair, J. Zweck, A. Hangleiter	2010	13
15	High quality, high efficiency and ultrahigh In‐content InGaN QWs – the problem of thermal stability Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·D. Fuhrmann, H. Jönen, Lars Hoffmann, H. Bremers, U. Rossów, A. Hangleiter	2008	12
16	Effects of spontaneous polarization on GaInN/GaN quantum well structures Journal of Applied Physics ·M. F. Thomsen, H. Jönen, U. Rossów, A. Hangleiter	2011	11
17	Mechanism of thermal degradation in GaInN/GaN quantum wells Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·H. Bremers, H. Jönen, Lars Hoffmann, U. Rossów, A. Hangleiter	2009	10
18	Spontaneous polarization field in polar and nonpolar GaInN/GaN quantum well structures physica status solidi (b) ·M. F. Thomsen, H. Jönen, U. Rossów, A. Hangleiter	2011	6
19	Growth of QW structures with high indium concentration on -plane and -plane surfaces by MOVPE Journal of Crystal Growth ·H. Jönen, U. Rossów, Torsten Langer, A. D. Dräger, Lars Hoffmann, H. Bremers, A. Hangleiter, F. Bertram, Sebastian Metzner, J. Christen	2008	6
20	Towards green lasing: ingredients for a green laser diode based on GaInN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·A. D. Dräger, H. Jönen, H. Bremers, U. Rossów, Pierre Demolon, H. P. D. Schenk, Jean‐Yves Duboz, Brian Corbett, A. Hangleiter	2009	3

About H. Jönen

H. Jönen is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Mechanics of Materials, having authored 24 papers that have together received 522 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Semiconductor Quantum Structures and Devices (11 papers), Ga2O3 and related materials (9 papers), ZnO doping and properties (9 papers), Metal and Thin Film Mechanics (5 papers), Nanowire Synthesis and Applications (5 papers), Semiconductor materials and devices (3 papers) and Ion-surface interactions and analysis (1 paper). The work is most often cited by research in Condensed Matter Physics (462 citations), Electronic, Optical and Magnetic Materials (202 citations), Atomic and Molecular Physics, and Optics (253 citations), Structural Biology (11 citations) and Materials Chemistry (215 citations). H. Jönen has collaborated with scholars based in Germany and France. Frequent co-authors include A. Hangleiter, U. Rossów, H. Bremers, Lars Hoffmann, Torsten Langer, Moritz Brendel, F. Scholz, Marco Schowalter, Thorsten Mehrtens and Andreas Rosenauer. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, physica status solidi (b), Semiconductor Science and Technology and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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