Nathan P. Sandler

664 total citations
23 papers, 569 citations indexed

About

Nathan P. Sandler is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Nathan P. Sandler has authored 23 papers receiving a total of 569 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 9 papers in Electronic, Optical and Magnetic Materials and 8 papers in Materials Chemistry. Recurrent topics in Nathan P. Sandler's work include Semiconductor materials and devices (21 papers), Copper Interconnects and Reliability (9 papers) and Semiconductor materials and interfaces (4 papers). Nathan P. Sandler is often cited by papers focused on Semiconductor materials and devices (21 papers), Copper Interconnects and Reliability (9 papers) and Semiconductor materials and interfaces (4 papers). Nathan P. Sandler collaborates with scholars based in United States, Singapore and Hong Kong. Nathan P. Sandler's co-authors include W. S. Lau, Taejoon Han, Jean‐Luc Autran, R. A. B. Devine, C. Chaneliere, Paul K. Chu, T. S. Tan, Werner Kern, A. P. Lane and A. Mitwalsky and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

Nathan P. Sandler

23 papers receiving 554 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Nathan P. Sandler United States 14 490 287 179 71 58 23 569
L.G. Gosset France 12 445 0.9× 209 0.7× 187 1.0× 65 0.9× 63 1.1× 37 508
Benjamin French United States 15 366 0.7× 260 0.9× 181 1.0× 88 1.2× 64 1.1× 25 527
G. Pavia Italy 12 495 1.0× 358 1.2× 89 0.5× 127 1.8× 33 0.6× 46 658
Yasutaka Uchida Japan 12 476 1.0× 341 1.2× 80 0.4× 45 0.6× 23 0.4× 65 543
P. Guérin France 14 226 0.5× 355 1.2× 107 0.6× 41 0.6× 109 1.9× 22 523
R. Gregory United States 18 988 2.0× 542 1.9× 162 0.9× 164 2.3× 86 1.5× 46 1.1k
Laegu Kang United States 12 1.3k 2.6× 509 1.8× 146 0.8× 149 2.1× 31 0.5× 27 1.3k
N. Novkovski Czechia 15 531 1.1× 222 0.8× 162 0.9× 122 1.7× 30 0.5× 64 623
T.M. Parrill United States 10 279 0.6× 179 0.6× 90 0.5× 60 0.8× 28 0.5× 18 427
A.K. Sinelnichenko Ukraine 9 166 0.3× 315 1.1× 134 0.7× 86 1.2× 40 0.7× 17 402

Countries citing papers authored by Nathan P. Sandler

Since Specialization
Citations

This map shows the geographic impact of Nathan P. Sandler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nathan P. Sandler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nathan P. Sandler more than expected).

Fields of papers citing papers by Nathan P. Sandler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nathan P. Sandler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nathan P. Sandler. The network helps show where Nathan P. Sandler may publish in the future.

Co-authorship network of co-authors of Nathan P. Sandler

This figure shows the co-authorship network connecting the top 25 collaborators of Nathan P. Sandler. A scholar is included among the top collaborators of Nathan P. Sandler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nathan P. Sandler. Nathan P. Sandler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lau, W. S., et al.. (2007). Mechanism of leakage current reduction of tantalum oxide capacitors by titanium doping. Applied Physics Letters. 90(11). 33 indexed citations
2.
Lau, W. S., et al.. (2006). Mechanism of leakage current reduction of tantalum oxide capacitors by postmetallization annealing. Applied Physics Letters. 89(26). 11 indexed citations
3.
4.
Lau, W. S., Taejoon Han, Nathan P. Sandler, et al.. (2006). Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000°C and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. Microelectronics Reliability. 47(2-3). 429–433. 10 indexed citations
5.
Lau, W. S., et al.. (2003). Detection of oxygen vacancy defect states in capacitors with ultrathin Ta2O5 films by zero-bias thermally stimulated current spectroscopy. Applied Physics Letters. 83(14). 2835–2837. 58 indexed citations
6.
Papadas, C., et al.. (1998). Transport Properties of the SiO(2)/Ta(2)O(5) stack as Gate Dielectric in CMOS Processes. European Solid-State Device Research Conference. 152–155. 2 indexed citations
7.
Lau, W. S., Taejoon Han, Nathan P. Sandler, et al.. (1998). The Superiority of N 2O Plasma Annealing over O 2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta 2O 5) Films. Japanese Journal of Applied Physics. 37(4B). L435–L435. 12 indexed citations
8.
Chaneliere, C., et al.. (1998). Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor. Journal of Applied Physics. 83(9). 4823–4829. 106 indexed citations
9.
Lau, W. S., Li Zhong, Allen S. Lee, et al.. (1997). Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy. Applied Physics Letters. 71(4). 500–502. 33 indexed citations
10.
Lau, W. S., et al.. (1997). Evidence that N2O is a Stronger Oxidizing Agent than O2 for the Post-Deposition Annealing of Ta2O5 on Si Capacitors. Japanese Journal of Applied Physics. 36(2R). 661–661. 49 indexed citations
11.
Lau, W. S., et al.. (1996). Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate. Journal of Applied Physics. 79(11). 8841–8843. 20 indexed citations
12.
Lau, W. S., et al.. (1996). A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing in O2 or N2O by Zero-Bias Thermally Stimulated Current Spectroscopy. Japanese Journal of Applied Physics. 35(5R). 2599–2599. 22 indexed citations
13.
Sandler, Nathan P., et al.. (1996). Tantalum pentoxide for advanced DRAM applications. Thin Solid Films. 290-291. 440–446. 69 indexed citations
14.
Mitwalsky, A., G. Tempel, G. Zorn, et al.. (1995). Deposition, annealing and characterisation of high‐dielectric‐constant metal oxide films. Advanced Materials for Optics and Electronics. 5(3). 163–175. 23 indexed citations
15.
16.
Mitwalsky, A., G. Tempel, G. Zorn, et al.. (1995). ChemInform Abstract: Deposition, Annealing and Characterization of High‐Dielectric Constant Metal Oxide Films.. ChemInform. 26(41). 1 indexed citations
17.
18.
Lo, G. Q., et al.. (1993). Highly reliable, high-C DRAM storage capacitors with CVD TA/sub 2/O/sub 5/ films on rugged polysilicon. IEEE Electron Device Letters. 14(5). 216–218. 31 indexed citations
19.
Mitwalsky, A., et al.. (1992). Low‐Pressure chemical vapour deposition of tantalum pentoxide films for ulsi devices using tantalum pentaethoxide as precursor. Advanced Materials for Optics and Electronics. 1(6). 299–308. 24 indexed citations
20.
Kern, Werner, et al.. (1991). MOCVD OF TANTALUM PENTOXIDE FOR LARGE-AREA ULSI CIRCUIT WAFERS. Journal de Physique IV (Proceedings). 2(C2). C2–311. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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