C. H. Tung

2.1k total citations · 1 hit paper
59 papers, 1.6k citations indexed

About

C. H. Tung is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C. H. Tung has authored 59 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 16 papers in Materials Chemistry. Recurrent topics in C. H. Tung's work include Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Semiconductor materials and interfaces (16 papers). C. H. Tung is often cited by papers focused on Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Semiconductor materials and interfaces (16 papers). C. H. Tung collaborates with scholars based in Singapore, United States and China. C. H. Tung's co-authors include G. Q. Lo, S.C. Rustagi, Navab Singh, D. L. Kwong, N. Balasubramanian, L. K. Bera, Ajay Agarwal, T. Y. Liow, Rui Yang and Rakesh Kumar and has published in prestigious journals such as Cell, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

C. H. Tung

58 papers receiving 1.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

2006 506 citations Navab Singh, Ajay Agarwal et al. profile →

Peers

C. H. Tung

EEE

BE

AMPO

MC

EOMM

Tsu-Jae King United States

Tejas Krishnamohan United States

C. Auth United States

Emmanuel Drouard France

Horng‐Chih Lin Taiwan

H. Aharoni Israel

Toshifumi Irisawa Japan

E. Augendre France

R. Rooyackers Belgium

Guang-Li Luo Taiwan

Tsu-Jae King United States

C. H. Tung

2.5k ×1.7

EEE

449 ×0.7

BE

359 ×0.7

AMPO

335 ×0.8

MC

64 ×1.9

EOMM

Citations per year, relative to C. H. Tung C. H. Tung (= 1×) peers Tsu-Jae King

Countries citing papers authored by C. H. Tung

Since Specialization

Citations

This map shows the geographic impact of C. H. Tung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. H. Tung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. H. Tung more than expected).

Fields of papers citing papers by C. H. Tung

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. H. Tung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. H. Tung. The network helps show where C. H. Tung may publish in the future.

Co-authorship network of co-authors of C. H. Tung

This figure shows the co-authorship network connecting the top 25 collaborators of C. H. Tung. A scholar is included among the top collaborators of C. H. Tung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. H. Tung. C. H. Tung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Saron, Wilfried A. A., Dongliang Ma, Abhay P. S. Rathore, et al.. (2024). Differential contributions of fetal mononuclear phagocytes to Zika virus neuroinvasion versus neuroprotection during congenital infection. Cell. 187(26). 7511–7532.e20. 7 indexed citations

2.

Tung, C. H., Abhay P. S. Rathore, & Ashley L. St. John. (2023). Conventional and non-conventional antigen presentation by mast cells. PubMed. 2(1). kyad016–kyad016. 3 indexed citations

3.

Pey, K. L., et al.. (2008). Schottky-like behavior of progressive breakdown of polycrystalline- silicon/silicon oxynitride gate dielectric stack. Applied Physics Letters. 92(1). 2 indexed citations

4.

Li, X., et al.. (2008). The chemistry of gate dielectric breakdown. 107. 1–4. 22 indexed citations

5.

Ang, D. S., S. J. O’Shea, K. L. Pey, et al.. (2008). Polarity dependent breakdown of the high-κ∕SiOx gate stack: A phenomenological explanation by scanning tunneling microscopy. Applied Physics Letters. 92(19). 4 indexed citations

6.

Ang, D. S., K. L. Pey, S. J. O’Shea, et al.. (2007). Bilayer gate dielectric study by scanning tunneling microscopy. Applied Physics Letters. 91(10). 33 indexed citations

7.

Nguyen, Hai Son, C. H. Tung, A. D. Trigg, et al.. (2007). Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition. Applied Physics Letters. 90(9). 80 indexed citations

8.

Fan, W. J., Wan Khai Loke, W. Liu, et al.. (2007). GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24μm. Applied Physics Letters. 91(5). 9 indexed citations

9.

Gao, Fei, S. J. Lee, Rui Li, et al.. (2006). GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack. National University of Singapore. 96. 1–4. 12 indexed citations

10.

Bera, L. K., Hai Son Nguyen, Navaneet Kumar Singh, et al.. (2006). Three Dimensionally Stacked SiGe Nanowire Array and Gate-All-Around p-MOSFETs. 1–4. 36 indexed citations

11.

Singh, Navab, Weiwei Fang, S.C. Rustagi, et al.. (2006). Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance. National University of Singapore. 1–4. 125 indexed citations

12.

Yu, Xiongfei, Chunxiang Zhu, Mingbin Yu, et al.. (2006). Advanced MOSFETs using HfTaON/SiO/sub 2/ gate dielectric and TaN metal gate with excellent performances for low standby power application. 27–30. 6 indexed citations

13.

Zhang, Qingchun, Nan Wu, Chunxiang Zhu, et al.. (2004). Germanium pMOSFET with HfON gate dielectric. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 256–257. 1 indexed citations

14.

Sun, Yajuan, K. L. Pey, C. H. Tung, et al.. (2004). Geometry dependence of gate oxide breakdown evolution [MOSFET]. 57–60. 4 indexed citations

15.

Choi, W. K., et al.. (2004). Confinement of Nanocrystals and Possible Charge Storage Mechanism for MIS Memory Devices with Ge Nanocrystals Embedded in SiO₂. MRS Proceedings. 818. 1 indexed citations

16.

Liu, Jin, K. L. Pey, W. K. Choi, et al.. (2004). The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C. Thin Solid Films. 462-463. 151–155. 25 indexed citations

17.

Hu, Hang, H.F. Lim, Chunxiang Zhu, et al.. (2003). High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications. National University of Singapore. 379–382. 5 indexed citations

18.

Ho, Chih-Sung, K. L. Pey, C. H. Tung, et al.. (1999). Thermal Studies on Stress-Induced Void-Like Defects in Epitaxial-CoSi₂ Formation. MRS Proceedings. 564. 2 indexed citations

19.

Peng, Changsi, Qi Huang, Jiahui Zhou, et al.. (1998). Improvement of Ge self-organized quantum dots by use of Sb surfactant. Applied Physics Letters. 72(20). 2541–2543. 37 indexed citations

20.

Peng, Changsi, et al.. (1998). New optical properties of Ge self-organized quantum dots. Thin Solid Films. 323(1-2). 174–177. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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