J.K.O. Sin

4.6k total citations
248 papers, 3.5k citations indexed

About

J.K.O. Sin is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, J.K.O. Sin has authored 248 papers receiving a total of 3.5k indexed citations (citations by other indexed papers that have themselves been cited), including 243 papers in Electrical and Electronic Engineering, 39 papers in Biomedical Engineering and 37 papers in Materials Chemistry. Recurrent topics in J.K.O. Sin's work include Semiconductor materials and devices (110 papers), Silicon Carbide Semiconductor Technologies (103 papers) and Advancements in Semiconductor Devices and Circuit Design (94 papers). J.K.O. Sin is often cited by papers focused on Semiconductor materials and devices (110 papers), Silicon Carbide Semiconductor Technologies (103 papers) and Advancements in Semiconductor Devices and Circuit Design (94 papers). J.K.O. Sin collaborates with scholars based in Hong Kong, China and United States. J.K.O. Sin's co-authors include Philip K. T. Mok, Xingbi Chen, Rongxiang Wu, Shengdong Zhang, P.C.H. Chan, Chunxiang Zhu, Wing‐Hung Ki, I‐Ming Hsing, R.K. Sharma and P. T. Lai and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Power Electronics.

In The Last Decade

J.K.O. Sin

235 papers receiving 3.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.K.O. Sin Hong Kong 29 3.2k 891 411 283 258 248 3.5k
Hans‐Erik Nilsson Sweden 22 1.3k 0.4× 754 0.8× 212 0.5× 104 0.4× 172 0.7× 126 1.8k
Cong Wang South Korea 20 1.0k 0.3× 555 0.6× 304 0.7× 169 0.6× 101 0.4× 94 1.7k
Markus Becherer Germany 25 1.4k 0.4× 760 0.9× 473 1.2× 186 0.7× 902 3.5× 156 2.2k
Chang‐Hoon Kim South Korea 25 1.1k 0.3× 762 0.9× 776 1.9× 146 0.5× 126 0.5× 110 2.1k
J. Ajayan India 27 1.7k 0.5× 515 0.6× 414 1.0× 82 0.3× 379 1.5× 155 2.3k
J. A. López‐Villanueva Spain 28 2.1k 0.6× 504 0.6× 231 0.6× 163 0.6× 369 1.4× 122 2.3k
Francesco G. Della Corte Italy 28 2.4k 0.7× 481 0.5× 507 1.2× 48 0.2× 1.1k 4.1× 217 2.8k
R. Plana France 32 3.1k 1.0× 1.3k 1.5× 597 1.5× 55 0.2× 1.1k 4.4× 356 3.8k
A. Ortíz-Conde Venezuela 29 3.6k 1.1× 536 0.6× 470 1.1× 53 0.2× 349 1.4× 153 4.0k
Felice Crupi Italy 31 3.2k 1.0× 835 0.9× 263 0.6× 28 0.1× 455 1.8× 222 3.5k

Countries citing papers authored by J.K.O. Sin

Since Specialization
Citations

This map shows the geographic impact of J.K.O. Sin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.K.O. Sin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.K.O. Sin more than expected).

Fields of papers citing papers by J.K.O. Sin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.K.O. Sin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.K.O. Sin. The network helps show where J.K.O. Sin may publish in the future.

Co-authorship network of co-authors of J.K.O. Sin

This figure shows the co-authorship network connecting the top 25 collaborators of J.K.O. Sin. A scholar is included among the top collaborators of J.K.O. Sin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.K.O. Sin. J.K.O. Sin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Yong, et al.. (2024). Experimental Demonstration of the Double-Trench, Buried-P JTE Edge Termination with Short Edge Width and High dV/dt Capability for 1200 V-class SiC Devices. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 17–20. 1 indexed citations
2.
Bai, Feiming, et al.. (2022). A Novel Conformal Thick Oxide Technology for On-Chip High-Voltage Isolation. IEEE Transactions on Components Packaging and Manufacturing Technology. 12(4). 704–706.
3.
Zhou, Xianda, Lei Lü, Yang Liu, et al.. (2022). Potential of the Amorphous Oxide Semiconductors for Heterogeneous Power Integration Applications. IEEE Transactions on Electron Devices. 70(1). 204–208. 4 indexed citations
4.
Liu, Yong, et al.. (2020). A Trench-Field-Plate High-Voltage Power MOSFET. IEEE Transactions on Electron Devices. 67(6). 2482–2488. 1 indexed citations
5.
Liu, Yong, et al.. (2019). Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices. IEEE Transactions on Electron Devices. 66(10). 4251–4257. 11 indexed citations
6.
Wu, Rongxiang, et al.. (2019). A New Fan-Out-Package-Embedded Power Inductor Technology. IEEE Electron Device Letters. 41(2). 268–271. 10 indexed citations
7.
Wu, Rongxiang, et al.. (2019). A Suspended Thick-Winding Inductor for Integrated Voltage Regulator Applications. IEEE Electron Device Letters. 41(1). 95–98. 8 indexed citations
8.
Tang, Chak Wah, Hao Feng, Huaxing Jiang, et al.. (2018). A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor. IEEE Electron Device Letters. 39(3). 394–396. 16 indexed citations
9.
Feng, Hao, et al.. (2016). Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination. IEEE Transactions on Electron Devices. 64(3). 728–734. 8 indexed citations
10.
Sin, J.K.O., Hitoshi Sumida, Yoshiaki Toyoda, et al.. (2011). UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFET. IEEE Transactions on Electron Devices. 58(11). 3984–3990. 12 indexed citations
11.
Sin, J.K.O., Hitoshi Sumida, Yoshiaki Toyoda, et al.. (2010). A novel low-voltage trench power MOSFET with improved avalanche capability. 201–204. 13 indexed citations
12.
Sin, J.K.O., et al.. (2005). A fully integrated CMOS and high voltage compatible RF MEMS technology. 35–38. 10 indexed citations
13.
Zhang, Qingchun, Nan Wu, Chunxiang Zhu, et al.. (2004). Germanium pMOSFET with HfON gate dielectric. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 256–257. 1 indexed citations
14.
Sin, J.K.O., et al.. (2004). Design, fabrication and characterization of a bi-directional insulated gate bipolar transistor. 332–335 vol.1. 1 indexed citations
15.
Suligoj, Tomislav, Haitao Liu, J.K.O. Sin, et al.. (2004). A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs. Solid-State Electronics. 48(10-11). 2047–2050. 4 indexed citations
16.
Zhu, Chunxiang, et al.. (2004). A Simple CMOS Self-Aligned Double-Gate Poly-Si TFT Technology. National University of Singapore. 87. 1 indexed citations
17.
Ki, Wing‐Hung, et al.. (2003). Phase-controlled dimmable electronic ballast for fluorescent lamps. 2. 1121–1125. 21 indexed citations
18.
Chan, P.C.H., Guizhen Yan, R.K. Sharma, et al.. (2002). An integrated gas sensor technology using surface micro-machining. Sensors and Actuators B Chemical. 82(2-3). 277–283. 66 indexed citations
19.
Sin, J.K.O. & S. Mukherjee. (1993). Analysis and characterization of the segmented anode LIGBT. IEEE Transactions on Electron Devices. 40(7). 1300–1306. 16 indexed citations
20.
Salama, C.A.T. & J.K.O. Sin. (1986). Wideband DMOS amplifier competes with bipolars. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 25(6). 113.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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